DLA SMD-5962-91630-1991 MICROCIRCUITS DIGITAL HIGH-SPEED CMOS ANALOG MULTIPLEXER DEMULTIPLEXER MONOLITHIC SILICON《硅单块 模拟多路转换器与多路分配器 高速互补金属氧化物半导体 数字微型电路》.pdf

《DLA SMD-5962-91630-1991 MICROCIRCUITS DIGITAL HIGH-SPEED CMOS ANALOG MULTIPLEXER DEMULTIPLEXER MONOLITHIC SILICON《硅单块 模拟多路转换器与多路分配器 高速互补金属氧化物半导体 数字微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-91630-1991 MICROCIRCUITS DIGITAL HIGH-SPEED CMOS ANALOG MULTIPLEXER DEMULTIPLEXER MONOLITHIC SILICON《硅单块 模拟多路转换器与多路分配器 高速互补金属氧化物半导体 数字微型电路》.pdf（16页珍藏版）》请在麦多课文档分享上搜索。

1、. REV SHEET REVSTATUS . REV OF SHEETS SHEET c 12 34 56 78-+ 1c 11 12 13 14 15 SMD-5962-93630 59 m 9999996 O008543 5 m I PMIC NA PREPARED BY, STANDARDIZED MILITARY DRAWING MIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE APPROVAL DATE 91-12-31 I REVISION L

2、EVEL 1 AMSC k/A 1 DESC FORM 193 SEP 87 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUITSy DIGITAL, HIGH-SPEED CMOS, ANALOG MULTIPLEXER/DEMULTIPLEXER, MONOLITHIC SILICON SIZE A I 67268 CAGE CODE )596-1830 . SHEET 1 OF 15 U.S. COVIRNMINT PRINTING OFFICE: 1987 - 748.119/6991 I 5962-E20

3、7 DISTRIBUTION STATEMENT A. Approved for publlc release; dlstrlbullon is unllmiled. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- SMD-59b2-9Lb30 59 9999996 0008542 7 * 1. SCOPE 1.1 Scqee. This drawing form 8 part of a one part - one part nunber do

4、cunentation system (see 6.6 herein). TM product assurme classes consisting of military high reliability (device classes B, (Il atxi M) esxl space application (device classes S end VI, mi a choice of case outlines ami lead finishes are aviilable end are reflected in the Part or Identifying N = 0.0 v

5、Vcc 9 .O v for all eppl iceble corrbinations of both v and v vafying fPb VEE to - See footnotes at end of tab1 STANDARDIZED MBLmARY DRAWING DEFENSE ELEC“K=S SUPPLY CEMR DAYTON, OHK) 45444 SIEE A I I 5962-91630 5C FORM 193A EP 87 Provided by IHSNot for ResaleNo reproduction or networking permitted wi

6、thout license from IHS-,-,-. SMD-59b2-91b30 59 9799996 00085Ll b = . TABLE I. Electrical wrfomnce characteristic8 - Continued. Test Cornnon capacitance Control input leakage Functionel tests current IoNl res i s tance (square wave inpit) Peak Will resistance (all inpit waveform types) Propagation de

7、lay, switch in to out Propagation delay, sui tch turn-IlOf f1I dela) from Sn or E to switch output propagation delay, sui tch turn-WrP delay from Sn or E to switch output See footnotes on next page. IN PZH PZL I I Limits -. Unit MtX Conditions Groy,A - -55C 5 T 5 +125“C 1/ subgrocps Min unless oth6r

8、wise swif ied . f = 1 MHr, powr off, COCIMQW WT/IN A wxl Comcwr WT/IN 6 to GNO, VEE, or Vcc, see 4.4.1 4 Vcc = 5.5 V, VI, = Vcc or GIID 11,2,31 = 4.5 v F1 vcc- :IS =:EE-“ - 0.0 v 1.0 IlA, SdS vcc = 4.5 v 1 mfi;do; :IH v 2.3 maxim, I I! . figure 4 9 VEE = -4.5 V 2.3 = 4.5 v .1 vcc- stb in VEE - 0.0 v

9、 = v to 2Km increments- 2.3 -9 10. Il VEE = -Y VEE = 0.0 V _, 9 I- VEE = -4.5 v -9 VEE = 0.0 v ., 9 10. 11 10, 11 v 10. 11 VEE = -4.5 v -9 10. 11 v 18 pF :1.0 1M). n 240. m. 180 180. n 270. m. 195 12 ns 18 ns 8 ns 12 ns 50 ns 75 - ns 38 ns 57 ns 70 ns 105 ns 48 ns i2 ns SIZE 5962-91630 STANDARDIZED

10、MILITARY DRAWING A 1 DEFENSE ELECTAOFJKS SUPPLY CENER RW!WNLEvEL SHEET 7 DAYTDN, OH 45444 ;C FORM 197A Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-9Lb30 59 9999996 0008548 8 . I/ For hi power supply of 5.0 V F go%T avec VEE 50% SWITCH OU

11、TPUT tr6nsi t i I-+ tf-6ns m 3.0 t Ih 0.3 6ND I E OR sn OUTPUT TO LOU I vcc VEE 50% OF (Vcc - VEE) I I 90% OUTPUT HIGH TO HIGH SWITCH O SWITCH OFF FIGURE 5. Test circuit and suitchins waveforms. SIZE 5962-91630 STANDARDIZED MILITARY DRAWING A I DEFENSE ELECfRoNICS PPLY CENTER mnw, OHIO 45444 ISC FOR

12、M 193A !EP 07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-_ SMD-59b2-9Lb30 59 999999b 0008552 T 4.3 Qualification inspection. 4.3.1 Qualification inspection for device classes B end S. Qualification inspection for device classes B and S shall be

13、in accordence with MIL-M-38510. specified in method 5005 of MIL-STD-883 and herein for groups A, E, C, D, and E inspections (see 4.4.1 through 4.4.5). classes Q and V shall be in accordence with MIL-1-38535. specified in MIL-1-38535 and herein for grows A, B, Cl D, wxl E inspections (see 4.4.1 throu

14、gh 4.4.5). accordance with MIL-STD-883 (see 3.1 herein) and as specified herein. Quality conformance inspection for device classes B and S shall be in accordance with MIL-M-38510 and as specifigd herein. Inspections to be performed for device classes M, 8, wxl S shall be those specified in method 50

15、05 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.5). Technology conformance inspection for classes Q end V shall be in accordenc with MIL-1-38535 incbuding groups A, 6, C, Dl and E inspections end as specified herein except where option 2 of MIL-1-38535 pe

16、rmits alternete in-line control testing. Inspections to be performed shall be those 4.3.2 Qualification inspection for device classes P and V. Qualification inspection for device Inspections ta be performed shall be those 4.4 Conformence inspection. Puality conformance inspection for device class M

17、shall be in 4.4.1 Grw A inspection. a. b. Tests shall be as specified in table IIA herein. For device class Ml subgroups 7 and 8 tests shall be sufficient to verify the truth table. For device classes B and S, subgrolps 7 and 8 tests shall be sufficient to verify the truth table as approved by the q

18、ualifying activity. For device classes Q d V, subgroups 7 and 8 shall include verifying the functionality of the device; these tests shall have been fault graded in accordance with MIL-STD-883, test method 5012 (see 1.5 herein). measurements) shall be measured only for the initial test and after Bro

19、ck or &I changes which may affect capacitance. Capacitance shall be measured between the designated terminal and GND at a frequency of 1 MHr. Test all epplicabCe pins on five devices with zero failures, Subgrolps 5 and 6 in table I, method 5005 of NIL-STD-883 shall be omitted. c. Swroq 4, (CI , c an

20、d C d. 4.4.2 Group B inspection. The grow B inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.3 Group C inspection. The grorp C inspection end-point electrice1 parameters shall be as specified in table IIA herein. 4.4.3.1 Additional criteria for device classes

21、 M. B. and S. Steady-state life test Conditions, Test condition A, 6, Cl or D. For device classM, the test circuit shall be srknitted to DESC-ECS for review with the certificate of conplience. circuit shall be suknitted to the qualifying activity. method 1005 of MIL-STD-883: a. For device classes B

22、wid S, the test .I b. TA = +125*C, minim. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. CIZE 5962-91630 A STANDARDIZED MILTTARY DRAWING DEFENCE UECTRONiCS SUPPLY CEHiEA REVISION LEVU SMJ3 12 1 DAWN, OHIO 45644 . OESC FORM 193A SEP 07 Provided by IHSNot for ResaleN

23、o reproduction or networking permitted without license from IHS-,-,-SMD-5962-9Lb30 59 9999996 O008553 L i TABLE IIA. Electrice1 test reaiiranents. r/ 2/ 3/ lest requi rmnts Interim electrical Finel electrical Deremeters (see 4.2) parcnieters (see 4.2) Slrbgroiips (per method 5005, t class class 1 A3

24、 1 ,7,9 I/ Blank spaces indicate tests are not applicable. 2/ * indicates PDA applies to sribgroup 1. 3J * indicates PDA applies to subgroip 1 and 7. Subgrorps teble III) ile I). (per MIL-1-38535, Device . Device Device class class class S Q V (1111 4.4.3.2 Additional criteria for device classes Q a

25、nd W. Th& stew-state life test cluration, test condition and test terrperature or approved alternatives shall be as specified in the device fnwwfacturerls QH plan in accordance with MIL-1-38535. lhe steedy-state life test circuit shall be submitted to DESC-ECS with the certificate of corrpliance end

26、 shall be wder the control of the device manufacturers TRB in accordence with MIL-1-38535. 4.4.4 Grow D inswction. lhe grq D inspection end-point electrical paremeters shall be as ,specified in table IIA herein. 4.4.5 Grow E insmtion. Groy, E inspection is required only for parts intended to be mark

27、ed as radiation herchess assured (see 3.5 herein). RHA levels for device classes B, S, Q, end V shall be M, D, R, end H and for device class M shall be M end D. RHA quality conformance inspection sample tests shall be performed at the RHA level specified in the acquisition docmnt. a. RHA tests for d

28、evice classes B end S for levels M, D, R, end H or for device class M for levels M end D shall be performed thraugh each level to determine at hat levels the devices meet the RHA requirements. These RHA tests shall be performed for initial qualification and after design or process changes which my a

29、ffect the RHA performance of the device. b. End-point electrical parameters shall be as specified in table IIA herein. SIZE 5962-91630 STANDARDIZED MILITARY DRAWING A I SiiEl 13 DEFENCE ELECTRONICS SUPPLY CENER RM!SIONLEVU DAYTON, OH0 45444 o u s OWERUUEM IWI OFFICE qw-ax-ni :SC FORM 193A iEP 87 Pro

30、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-91630 59 W 9999996 0008554 3 W STANDARDIZED MILITARY DRAWING DEFENSE UECTRONCS SUPPLY CENTER DAm, OHIO 45444 F SIZE A 5962-91630 14 4 REvIsK)F(LEvL C. d. e. f. 9- TABLE IIB. Additional screening .

31、for device class V. I Test I MIL-STD-883, test method I Lot rquirement I Prior to total dose irradiation, each selected sample shall be assembled in its for subgrolpc specified It shallar in t le IIA herein. qualified package. For device classes M, 8, and S, the devices shall be shjected to radiatio

32、n hardness assured tests as specified in MIL-M-38510 for RHA level being tested, end meet the postirradiation end-point electrical paremeter limits as defined in table 1 at TA = +25V t5 percent, after exposure. ss the specified group A electrical paremeters in table I Prior to and during total dose

33、irradiation testing, the devices shall be biased to establish a worst case condition as specified in the radiation exposure circuit. For device classes M, B, and S, subgroups 1 and 2 in table V, method 5005 of MIL-STD-883 shall be tested as appropriate for device construction. when specified in the

34、purchase order or contract, a copy of the RHA delta limits shall be supplied. 5. PACKAGING 5.1 Packagina reaiirements. The requirements for packaging shall be in accordance with MIL-M-38516 for device classes M, B, and S and MIL-1-38535 for device classes Q and V. 6. NOTES 6.1 6.1.1 Replaceability.

35、Microcircuits covered by this drawing will replace the swne generic device 6.1.2 Substitutability. Device classbs B and Q devices will replace device class M devices. 6.2 Configuration control of SMDIS. All proposed changes to existing SMls will be coordinated Intended use. Microcircuits conforming

36、to this drawing are intended for use for Goverrment microcircuit applications (original equipment), design applications, wid logistics purposes. covered by a contractor-prepared specification or drawing. with the users of record for the individual docunents. This coordination will be acccmplished in

37、 accordance with MIL-STD-481 using DD Form 1693, Engineering Change Proposal (short Form). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-91630 59 9997996 0008555 5 I 6.3 Record of users. Military and industrial users shall inform Defense E

38、lectronics Slpply Center when a system application requires Configuration control and which SHDs are applicable to that system. DESC will maintain a record of users and this list will be uscd for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic dev

39、ices (FSC 5962) should contact DESC-ECS, telephone (513) 296-6022. 6.4 Comnents. Cmnts on this drawing should be directed to DESC-ECS, Dayton, Ohio 45444, or telephone (513) 296-5375. 6.5 Swim 1s. definitions. end functional descriDtions. STANDARDIZED SIZE A 5962-91630 MILITARY DRAWING 1- I5 I DEFEN

40、SE ELECTRONICS SUPPLY CENTER REWSWLEVEL DAYTON, OHIO 4- Grd zero voltage potentiali Quiescent srpply current. Input current Lou. Input current high. Case tenperature. Anbient temperature. Positive sripply voltage. Negative supply voltage. Switch input voltwe. Sui tch output voltage. Control pin inpu

41、t voltage. 6.6 One Dert - one part nimber system. The one part - one part &r system described below has been developed to aliou for transitions between identical generic devices covered by the four major microcircuit requirements docunents (MIL-M-38510, MIL-H-38534, MIL-1-38535, and 1.2.1 of MIL-STD

42、-883) without the necessity for the generation of unique PINIS. The four military requirements docunents represent different class levels, and previously when a device manufacturer upgraded military product from one class level to another, the benefits of the Lpgraded product were mavailable to the

43、Original Equipnent Manufacturer (OEM), that was contractually locked into the original mique PIN. By establishing a one part &r system covering all four docunents, the OEM can acquire to the highest class level available for a given generic device to meet system neects without modifying the original

44、 contract parts selection criteria. Docmt Exeniple PIN Manufactur ins Militarv docunentation format uider new system source Listing listing Neu MIL-M-38510 Military Detail 5%2-XXXXxzz(B or s)YY QPL-38510 MIL-WL-103 Specifications (in the SMD format) Drawings Neu MIL-1-38535 Standardized Military 5%2

45、-XXXXXZZ(Q or V)YY QML-38535 MI L- BUL- 103 Drawings Neu 1.2.1 of MIL-STD-863 Standardized 5%2-XXXXXZZ(M)YY MIL-MIL-103 MI L-WL- 103 Military Drawings (Part 1 or 2) Neu MIL-H-38534 Standardized Mi litary 5962-XXXXXZUH or K)YY QML-38534 MI L-MIL- 103 6.7 Sources of spply. 6.7.1 Sources of swlv for de

46、vice classes B and S. Sources of supply for device classes B and S are listed in PPL-38510. 6.7.2 Sources of supoly for device classes Q and V. Sources of suciply for device classes Q d V are listed in PML-38535. The vendors listed in QML-38535 have suhitted a certificate of compliance (see 3.6 here

47、in) to DESC-ECS end have agreed to this drawing. listed in MIL-BUL-103. The vendors listed in MIL-BUL-103 have agreed to this drawing and a certificate of corrpliance (see 3.6 herein) has been scknitted to wid accepted by DESC-ECS. 6.7.3 Approved sources of smlv for device class M. Approved sources

48、of supply for class M are Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-9L630 59 9999996 0008556 7 t Standardized military drawing PIN 5962-9163001MEX STANDARDIZED MILITARY DRAWING sow(= APPROVAL BULLETIN DATE: 91-12-31 Vendor Vendor CAGE

49、sirni lar nvrber PIN 1/ 34371 CD54HCT4052F/3A The informtion contained herein is disseminated for cormenience only and the Govermt assunes no liability uhatsoever for any inaccuracies in this Vendor CAGE tumber 34371 Vendor name and address Harris Semiconductor P.O. BOX 883 Melbourne, FL 32901 Provided by IHSNot for ResaleNo reproduction or networking permitted without li