DLA SMD-5962-90739 REV D-2000 MICROCIRCUIT LINEAR 5 V POSITIVE FIXED VOLTAGE REGULATOR MONOLITHIC SILICON《硅单块 稳压器 固定正极5伏特直线型微型电路》.pdf

《DLA SMD-5962-90739 REV D-2000 MICROCIRCUIT LINEAR 5 V POSITIVE FIXED VOLTAGE REGULATOR MONOLITHIC SILICON《硅单块 稳压器 固定正极5伏特直线型微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-90739 REV D-2000 MICROCIRCUIT LINEAR 5 V POSITIVE FIXED VOLTAGE REGULATOR MONOLITHIC SILICON《硅单块 稳压器 固定正极5伏特直线型微型电路》.pdf（11页珍藏版）》请在麦多课文档分享上搜索。

1、LTR A B I Add device types 05 and 06. Technical and editorial changes throughout. 96-02-01 I M.A.FRYE I DESCRIPTION DATE (YR-MO-DA) APPROVED 94-09-1 6 M. A. FRYE Changes in accordance with N.O.R. 59624243-94. C D REV STATUS OF SHEETS Changes in accordance with N.O.R. 5962-R095-96. 96-04-08 M. A. FRY

2、E Drawing updated to reflect current requirements. - ro 00-08-21 R. MONNIN R EV SHEET PMIC NIA DDDDDDDDDD 12 3 4 5 6 7 8 9 10 PREPAREDBY MARCIA B. KELLEHER AMSC NIA STANDARD MICROCIRCUIT DRAW1 NG REVISION LEVEL SIZE CAGE CODE 5962-90739 D A 67268 SHEET 1 OF 10 THIS DRAWING IS AVAILABLE FOR USE BY AL

3、L DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY SANDRA ROONEY DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 APPROVED BY MICHAEL A. FRYE DRAWING APPROVAL DATE 93-1 0-29 MICROCIRCUIT, LINEAR, 5 V, POSITIVE, FIXED, VOLTAGE REG U LATOR, MONOLITH IC SI LICON Licensed by Informati

4、on Handling Services1. SCOPE DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are

5、available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. REVISION LEVEL SHEET D 2 1.2 m. The PIN is as shown in the following example: I I T I T 5962 90739 I f I I II Lead stock class designat

6、or type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) I (see 1.2.3) Case Device Device Federal RHA V Drawing number 1.2.1 RHA desimator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropri

7、ate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device tvpe(s). The device type(s) identify the circuit function as follows: Device tvpe Gene

8、ric number Circuit function o1 02 03 04 05 06 LTlO83-5 LTlO84-5 LTlO85-5 LTlO86-5 LTlO84-12 LTlO85-12 5 V, positive, fixed, voltage regulator 5 V, positive, fixed, voltage regulator 5 V, positive, fixed, voltage regulator 5 V, positive, fixed, voltage regulator 12 V, positive, fixed, voltage regulat

9、or 12 V, positive, fixed, voltage regulator 1.2.3 Device class desimator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-J

10、AN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q orV Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive desimator Terminals Packacie stvle X MBFMl -P2 2

11、Flange mount 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-90739 USLL tUHM 2234 APR 97 Licensed by Information Handling Services1.3 Absolute maximum ratina

12、s. DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 Input voltage (VIN) 30 V dc I/ Power dissipation (PD) Internally limited Storage temperature range 65C to +15O“C Lead temperature (soldering, 1 O seconds) Junction temperature (TJ): +3OO0C Control section . +150C Power transistor Thermal r

13、esistance Thermal resistance, junction-to-case (jc): Device type 01, control circuity . 0.6“CNV Device type 01, power transistor . 1.6“CNV Device types 02 and 05, control circuitry Device types 02 and 05, power transistor Device types 03 and 06, control circuitry . 0.9“CNV Device types 03 and 06, po

14、wer transistor . 3.O“CNV Device type 04, control circuity . 1 .7“CNV Device type 04, power transistor 4.0“CNV 1.4 Recommended operatina conditions. REVISION LEVEL SHEET D 3 Input voltage (VIN): Device types 01, 02, 03, and 04 20 V dc Device types 05 and 06 . 25 V dc Ambient operating temperature ran

15、ge (TA) . -55C to +125“C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the

16、 issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPEC I FI CATI ON DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - T

17、est Method Standard Microcircuits. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines. - 1/ Although the devices maximum operating input voltage is limited to 20 V for devices 01, 02, 03, and 04, and 25 V for devices 05 and 06, the devices are gu

18、aranteed to withstand transient input voltages up to 30 V. STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-90739 USLL tUHM 2234 APR 97 Licensed by Information Handling ServicesHANDBOOKS DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 DEPARTMENT OF DEFENSE REVISION LEVEL SHEET D 4 MIL-HDBK-1

19、03 - MIL-HDBK-780 - Standard Microcircuit Drawings. List of Standard Microcircuit Drawings (SMDs). (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191 11 -

20、5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQU

21、IREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or fu

22、nction as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Desian, construction, and phvsical dimensions. The design, construction, and physical dimensions shall

23、be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlinefs). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure

24、 1. 3.3 Electrical performance characteristics and post irradiation parameter limits. Unless otherwise specified herein, the electrical petformance characteristics and post irradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4

25、 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked

26、as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device class

27、es Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for

28、 device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device

29、 class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that

30、 the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-3

31、8535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of chame for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawi

32、ng is required for any change as defined in MIL-STD-973. STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-90739 USLL tUHM 2234 APR 97 Licensed by Information Handling ServicesTest Output voltage VIN = 17 V Line regulation 05 5.5 06 3.2 Load regulation 11 21 31 41 REVISION LEVEL D Dropout voltage (VIN

33、- VOUT) SHEET 5 Current limit TABLE I. Electrical performance characteristics. See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING 1 5962-90739 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 Licensed by Information Handling ServicesTABLE I. Electrical performance characteristics

34、- Continued. Group A subgroups Test Device Limits Unit type Quiescent supply current DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 Thermal regulation REVISION LEVEL SHEET D 6 Ripple rejection Symbol ISY VRTH RR Conditions -55C I TA I +125“C unless otherwise specified VIN I25 V 30 ms puls

35、e, TA = +25“C f = 120 Hz, VIN = 8 V, 11 COUT = 25 pF tantalum, IOUT = IFULL LOAD f = 120 HZ, VIN = 15 V, 51 COUT = 25 pF tantalum, IOUT = IFULL LOAD - 11 IFULL LOAD is defined as the minimum value of current limit as a function of input to output voltage. - 21 Note that maximum power is only achieva

36、ble over a limited range of input to output voltage. Device type O1 is rated for 5.0 A, device types 02, 03 are rated for 3.0 A, device type 04 is rated for 1 .O A, and device types 05, 06 are rated for 2.0 A. - 31 See thermal regulation specification for changes in output voltage due to heating eff

37、ects. Load and line regulation are measured at a constant junction temperature by low duty cycle pulse testing. Load regulation is measured at the output lead at approximately 18 inches from the package. - 41 Line and load regulation are guaranteed up to the maximum power dissipation, 60 W for devic

38、e type 01, 45 W for device types 02 and 05,30 W for device types 03 and 06, and 15 W for device type 04. Power dissipation is determined by the input/output differential and the output current. - 51 Dropout voltage is specified over the full output current range of the device. 3.9 Verification and r

39、eview for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.1 O Microcircuit aroup ass

40、ianment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 52 (see MIL-PRF-38535, appendix A). STANDARD MICROCIRCUIT DRAWING IA SIZE I I 5962-90739 USLL tUHM 2234 APR 97 Licensed by Information Handling ServicesDevice types Case outline 01,02,03,

41、04,05,06 X Terminal number 2 Terminal symbol VIN 1 GND FIGURE 1. Terminal connections. Case STANDARD MICROCIRCUIT DRAWING OUTPUT IA SIZE I DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 I 5962-90739 REVISION LEVEL SHEET D 7 USLL tUHM 2234 APR 97 Licensed by Information Handling Services4.

42、 QUALITY ASSURANCE PROVISIONS DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 4.1 Samplinci and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The

43、modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, a

44、nd shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. REVISION LEVEL SHEET D 8 4.2.1 Addit

45、ional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test c

46、ircuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1 O1 5. (2) TA = +125“C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for dev

47、ice classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the devic

48、e manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in

49、 test method 1015 of MIL-STD-883. b. c. Interim and final electrical test parameters shall be as specified in table II herein. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections