DLA SMD-5962-90712 REV D-2004 MICROCIRCUIT LINEAR MICROPROCESSOR SUPERVISORY CIRCUITS MONOLITHIC SILICON《硅单块 微处理器监视回路 直线式微型电路》.pdf

《DLA SMD-5962-90712 REV D-2004 MICROCIRCUIT LINEAR MICROPROCESSOR SUPERVISORY CIRCUITS MONOLITHIC SILICON《硅单块 微处理器监视回路 直线式微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-90712 REV D-2004 MICROCIRCUIT LINEAR MICROPROCESSOR SUPERVISORY CIRCUITS MONOLITHIC SILICON《硅单块 微处理器监视回路 直线式微型电路》.pdf（13页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R134-94. 94-03-24 M. A. FRYE B Changes in accordance with NOR 5962-R038-95. 94-11-29 M. A. FRYE C Redrawn. Add case outline X. Technical and editorial changes throughout. 95-03-24 M. A. FRYE D Drawing updated t

2、o reflect current requirements. -rrp 04-07-19 R. MONNIN THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY DAN WONNELL DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT

3、 DRAWING CHECKED BY CHARLES E. BESORE COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, MICROPROCESSOR SUPERVISORY CIRCUITS, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPR

4、OVAL DATE 92-03-26 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-90712 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E343-04 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90712 DEFENSE SUPPLY CENTER COLUMB

5、US COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are av

6、ailable and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 90712 01 M P A Federal stock class designator RHA designator (see 1.2.1) De

7、vicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M R

8、HA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 MAX69

9、0 Microprocessor watchdog/battery switchover/reset generator 02 MAX692 Microprocessor watchdog/battery switchover/reset generator 03 MAX694 Microprocessor watchdog/battery switchover/reset generator 1.2.3 Device class designator. The device class designator is a single letter identifying the product

10、 assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case o

11、utline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line H GDFP1-F10 or CDFP2-F10 10 Flat pack X CDFP3-F10 10 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead f

12、inish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90712 DEFENSE SUPPLY CENTER CO

13、LUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (VCC). -0.3 V dc to +6.0 V dc Battery voltage range (VBATT) -0.3 V dc to +6.0 V dc All other inputs . -0.3 V dc to (VOUT+ 0.5 V) Input current: VCC+200 mA VBATT. +50

14、mA GND +20 mA Output current: VOUTShort circuit protected All other outputs +20 mA Rate-of-rise, VBATT, VCC +100 V/s Storage temperature range -65C to +160C Power dissipation (PD) 500 mW 2/ Lead temperature (soldering, 10 seconds) 300C Thermal resistance, junction-to-case (JC) . +55C/W Thermal resis

15、tance, junction-to-ambient (JA) +125C/W 1.4 Recommended operating conditions. Supply voltage (VCC): Device types 01 and 03 4.75 V dc to 5.5 V dc Device type 02 4.5 V dc to 5.5 V dc Battery voltage (VBATT) 2.8 V Ambient operating temperature range (TA). -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Gover

16、nment specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICAT

17、ION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard M

18、icrocircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Or

19、der of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above

20、the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Derate above +70C: 8.0 mW/C for case outline P, 5.26 mW/C for case outlines H and X, and 9.09 mW/C for case outline 2. Provided by IHSNot

21、for ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90712 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements

22、 for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for

23、 device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q

24、 and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Block diagram. The block diagram shall be as specified on fi

25、gure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3

26、.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marke

27、d. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in a

28、ccordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be

29、 a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate

30、of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers produ

31、ct meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class

32、 M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any

33、change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at

34、the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 105 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-

35、STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90712 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits 2/ Test Symbol Conditions 1/ -55C TA +125C VBATT= 2.8 V unless otherwise specified Group A s

36、ubgroups Device type Min Max Unit BATTERY BACKUP SWITCHING 01, 03 4.75 5.5 VCC02 4.5 5.5 01, 03 2.0 4.25 Operating voltage range VBATT1, 2, 3 02 2.0 4.0 V IOUT= 1 mA VCC-0.3 Output voltage VOUTIOUT= 50 mA 1, 2, 3 All VCC-0.5 V Battery output voltage backup mode BATTOUTIOUT= 250 A, VCCVCC VBATT+ 1 V

37、2, 3 All -1.0 +0.02 A Battery switchover threshold VCC- VBATTBATTSWTHPower up or power down 1, 2, 3 All -200 +200 mV RESET AND WATCHDOG TIMING 01, 03 4.5 4.75 Reset voltage threshold RTH1, 2, 3 02 4.25 4.5 V Reset threshold hysteresis RTHH1, 2, 3 All 250 mV See footnotes at end of table. Provided by

38、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90712 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Li

39、mits 2/ Test Symbol Conditions 1/ -55C TA +125C VBATT= 2.8 V unless otherwise specified Group A subgroups Device type Min Max Unit RESET AND WATCHDOG TIMING continued 9 35 70 10, 11 01, 02 31 78 9 140 280 Reset timeout delay RDELOSC SEL HIGH VCC= 5 V 10, 11 03 126 310 ms 9 1.0 2.25 Long period, VCC=

40、 5 V 10, 11 0.9 2.42 s 9 70 140 Watchdog timeout period, internal oscillator WDINTShort period, VCC= 5 V 10, 11 All 62 154 ms 9 200 Minimum WDI input pulse width WDIPWVIL= 0.4 V, VIH= VCC(0.8) 10, 11 All 300 ns RESET output voltage high R VOHISOURCE= 1 A, VCC= 5 V 1, 2, 3 All 3.5 V ISINK= 1.6 mA, VC

41、C= 4.25 V 1 0.4 RESET output voltage low R VOLISINK= 800 A, VCC= 4.25 V 2, 3 All 0.4 V RESET output short circuit current RIOSRESET = 0 V 1, 2, 3 All 1 25 A 1 0.8 WDI input threshold logic low WDIVILVCC= 5 V 3/ 4/ 2, 3 All 0.4 V 1 3.5 WDI input threshold logic high WDIVIHVCC= 5 V 3/ 4/ 2, 3 All 4.0

42、V 1 50 WDI = VOUT2, 3 80 1 -50 WDI input current WDIINWDI = 0 V 2, 3 All -80 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90712 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO

43、43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Limits 2/ Test Symbol Conditions 1/ -55C TA +125C VBATT= 2.8 V unless otherwise specified Group A subgroups Device type Min Max Unit POWER FAIL DETECTOR PFI input threshold PFIVTHVC

44、C= +5 V 3/ 1, 2, 3 All 1.2 1.4 V PFI input current PFIIN1, 2, 3 All -25 +25 nA PFO output voltage high PFOVOHISOURCE= 1 A, VCC= 5 V 1, 2, 3 All 3.5 V ISINK= 3.2 mA 1 0.4 PFO output voltage low PFOVOLISINK= 1.6 mA 2, 3 All 0.4 V PFO short circuit source current PFOIOSPFI = VIH, PFO = 0 V 1, 2, 3 All

45、1 25 A 1/ For device types 01 and 03, VCC= 4.75 V to 5.5 V, unless otherwise specified. For device type 02, VCC= 4.5 V to 5.5 V, unless otherwise specified. 2/ The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used for these limits. 3/ The inp

46、ut voltage limits on PFI and WDI may be exceeded provided the input current is limited to less than 10 mA. 4/ WDI is guaranteed to be in the mid-level (inactive) state if WDI is floating and VCCis in the operating voltage range. WDI is internally biased to 38 percent of VCCwith an impedance of appro

47、ximately 125 k. 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fi

48、t, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device cl