DLA SMD-5962-90711 REV A-2004 MICROCIRCUIT LINEAR MICROPROCESSOR SUPERVISORY CIRCUITS MONOLITHIC SILICON《硅单块 直线式微处理器监视回路 微型电路》.pdf
《DLA SMD-5962-90711 REV A-2004 MICROCIRCUIT LINEAR MICROPROCESSOR SUPERVISORY CIRCUITS MONOLITHIC SILICON《硅单块 直线式微处理器监视回路 微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-90711 REV A-2004 MICROCIRCUIT LINEAR MICROPROCESSOR SUPERVISORY CIRCUITS MONOLITHIC SILICON《硅单块 直线式微处理器监视回路 微型电路》.pdf(14页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. -rrp 04-06-29 R. MONNIN REV SHET REV SHET REV STATUS REV A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY DAN WONNELL DEFENSE SUPPLY CENTER COLUMBUS STAN
2、DARD MICROCIRCUIT DRAWING CHECKED BY CHARLES E. BESORE COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, MICROPROCESSOR SUPERVISORY CIRCUITS, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEF
3、ENSE DRAWING APPROVAL DATE 92-03-26 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-90711 SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E322-04 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90711 DEFENSE S
4、UPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and l
5、ead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 90711 01 M E A Federal stock class designator RHA design
6、ator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designato
7、r. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circui
8、t function 01 MAX691 Microprocessor watchdog/battery switchover/reset generator 02 MAX693 Microprocessor watchdog/battery switchover/reset generator 03 MAX695 Microprocessor watchdog/battery switchover/reset generator 1.2.3 Device class designator. The device class designator is a single letter iden
9、tifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF
10、-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in
11、 MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90711 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISI
12、ON LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (VCC). -0.3 V dc to +6.0 V dc Battery voltage range (VBATT) -0.3 V dc to +6.0 V dc All other inputs . -0.3 V dc to (VOUT+ 0.5 V) Input current: VCC+200 mA VBATT. +50 mA GND +20 mA Output current: VOUTShort
13、 circuit protected All other outputs +20 mA Rate-of-rise, VBATT, VCC +100 V/s Storage temperature range -65C to +160C Lead temperature (soldering, 4 seconds). 260C Power dissipation (PD) . 600 mW 2/ Lead temperature (soldering, 10 seconds) 300C Thermal resistance, junction-to-case (JC) . +50C/W Ther
14、mal resistance, junction-to-ambient (JA) +100C/W 1.4 Recommended operating conditions. Supply voltage (VCC): Device types 01 and 03 4.75 V dc to 5.5 V dc Device type 02 4.5 V dc to 5.5 V dc Battery voltage (VBATT) 2.8 V Ambient operating temperature range (TA). -55C to +125C 2. APPLICABLE DOCUMENTS
15、2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE S
16、PECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of S
17、tandard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094
18、.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stress
19、es above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Derate 10 mW/C above +85C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAN
20、DARD MICROCIRCUIT DRAWING SIZE A 5962-90711 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as spec
21、ified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN
22、 class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case out
23、line. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Block diagram. The truth table shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter li
24、mits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subg
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