DLA SMD-5962-90708 REV A-1996 MICROCIRCUIT DIGITAL CMOS 8 X 8 MULTIPLIER MONOLITHIC SILICON《硅单块 8X8倍增器 互补金属氧化物半导体数字微型电路》.pdf
《DLA SMD-5962-90708 REV A-1996 MICROCIRCUIT DIGITAL CMOS 8 X 8 MULTIPLIER MONOLITHIC SILICON《硅单块 8X8倍增器 互补金属氧化物半导体数字微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-90708 REV A-1996 MICROCIRCUIT DIGITAL CMOS 8 X 8 MULTIPLIER MONOLITHIC SILICON《硅单块 8X8倍增器 互补金属氧化物半导体数字微型电路》.pdf(18页珍藏版)》请在麦多课文档分享上搜索。
1、SMD-5962-9070 REV A m 9999996 0090342 179 m DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER COLUMBUS 3990 EAST BROAD STREET COLUMBUS, OH 4321 6-5000 IN REPLY REFER TO: DSCC-VAC (Mr. Gauder/(DSN)850-0545/614-692-0545) OCT 2 9 5996 SUBJECT: Notice of Revision (NOR) 5962-R189-96 for Standard Microcircui
2、t Drawing (SMD) 5962-90708. Military/Industry Distribution The enclosed NOR is approved for use effective as of the date of the NOR. In accordance with MIL-STD-100 SMD holders should, as a minimum, handwrite those changes described in the NOR to sheet 1 of the subject SMD. After completion, the NOR
3、should be attached to the subject SMD for future reference. Those companies who were listed as approved sources of supply prior to this action have agreed to actions taken on devices for which they had previously provided DSCC a certificate of compliance. This is evidenced by an existing active curr
4、ent certificate of compliance on file at DSCC with a DSCC record of verbal coordination. The certificate of compliance for these devices is considered concurrence with the new revision unless DSCC is otherwise notified. DSCC has received and accepted a certificate of compliance from Logic Devices, C
5、age Code 65896 for PIN 5962-9070801XX. and vendor similar part number LMA1008DMB50. This action will be reflected in the next revision of MIL-HDBK- 103. If you have comments or questions, please contact Larry T. Gauder at (DSN)850-0545/(614)692-0545. 1 Encl 4onica L. Poeiking Chief, Custom .Microele
6、ctroncs Branch Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-NOTICE OF REVISION (NOR) MIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED. ublicreporling,burden for,lhisclection is estimated io average 2 hours per,nsponse. indU
7、ding he time for reviewin instructions, searchin existing data ACTIVITY NO. :LEASE DO AT RETURN Y$k C8MPLETED FORM TO EIT dlslrlbulion Is unlirnlled. . - Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-i - SIZE A STANDARDIZED SMD-5462-70708 57 797979
8、6 0001279 5-m 5962-90708 1. SCOPE 1.1 Scope, This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“. 1.2 Part or Identifying Number (PIN), The complete PIN sha
9、ll be as shown in the following exampl e: 5962-90708 -I- I o1 I I X 7- I X 7- I I I I I I Lead tinisn per I 1 I Lase outline lievice type Drawmg numer (1.2.1) (1.2.2) MI L-M- 38510 1.2.1 Device type, The device type shall identify the circuit function as follows: Device type Generic number Circuit f
10、unction o1 TK2208J4Y 8 X 8 CMOS multiplier/accumulator 1.2.2 Case outline. The case outline shall be as designated in appendix C of MIL-K38510, and as fol 1 owc: Out1 ine letter Case outline X D-14 (48-lead, 2.435“ x .620“ x .225“), dual-in-line package 1.3 Absolute maximum ratings. Supply voltage r
11、ange (VDD) - - - - - - - - - - - - Input voltage range - - - - - - - - - - - - - - - - -0.5 V dc to +7.0 V dc -0.5 V dc to (YDD tO.5) Y dc output: Forced current Power dissipation 31 - - - - - - - - - - - - - - - Storage temperature-range - - - - - - - - - - - - - Junction temperature - - - - - - -
12、- - - - - - - - Case operating temperature range (Tc) - - - - - - - Lead temperature (soldering, 10 seconds)- - - - - - Thermal resistance, junction-to-case (el herein). 3.9 Verification and review. DESC, DESCs agent, and the acquiring activity retain the option to eview the manufacturers facllity a
13、nd applicable required documentation, hall be made available onshore at the option of the reviewer. Offshore documentation 4, QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection, Sampling and inspection procedures shall be in accordance with 4.2 Screening. Screening shall be in accordance with
14、method 5004 of MIL-STD-883, and shall be ection 4 f MIL - M 38510 to the extent specified in MIL-STD-883 (see 3.1 herein). onducte on -all- devices prior to quality conformance inspection. The following additional criteria hall apply: a. Burn-in fest, method 1015 of MIL-STO-883. (i) Test condition B
15、 or D usiny the circuit submitted with the certificate of compliance (see 3.6 herein). (2) TA = +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of the m
16、anufacturer. 4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with ethod 5005 of MIL -STD-883 including groups A, B, C, and D inspections. riteria shall apply. The following additional DESC FORM 193A SE? 87 ii U. S. GOVERNMENT PRINTING OFFICE 19BB-549.W e Y P
17、rovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-I - 2/ All transitions are measured at 1.5 V level. VIH = 3 V during dynamic testing. Inputs are driven at VIL = O V and I I STANDARDIZED SIZE 1 I 1 Y DESC FORM 193A t U. S. GOVERNMENT PWNliNG OFFCk lW-S
18、9-8M SEP 87 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-70708 59 m 7799996 0003283 7 m SIZE A STANDARDIZED PREL L L L L L L L L H H 5962-90708 - TSX - L L L L H H H H L L IH IL IH IL IH IH IH IH IH IH IH IH - T SM - L L H H L L H H L L H
19、 H L L H H I I Terminal I number 12 7 13 14 15 16 17 18 19 I 10 I 11 I 12 I 13 I 14 I 15 I 16 I 17 I 18 I 19 I 20 I 21 I 22 I 23 I 24 - TSL - L H L H L H L H L H L H L H L H - Device type O1 Temi na1 syrnbol 11 ;12 ; ;: ;!a p10 TSM CLK P PREL p7 GND p4 p3 p2 P1 SUB ACC RND XO X1 x2 etminal number 25
20、 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 I Terminal I symbol I I i x3 I x4 I x5 I x6 x7 I CLK X I CLK Y I I I I I I TZ I TSX I p16 I p15 I 14 I p13 i YO i6 I 17 FIGURE 1. Terminal connections. Device tvoe O1 XTP Register-Output pin Regi Ster-Output pin Regi ster-Output p
21、in Reyi Ster-Output pin Hi-Z Hi-Z Hi-Z , Hi-Z H i-Z Hi-Z Hi-Z Preload Hi-Z Preload Hi-Z Preload Hi-Z Preload H i-Z Hi-Z MSP Regi Ster-Output pin Regi Ster-Output pin Hi-Z Hi-Z Register-Output pin Regi Ster-Output pin Hi-Z Hi-Z Hi-Z Hi-Z Preload Hi-2 Preload Hi-Z Hi-Z Preload Hi-Z Preload Hi-Z Hi-Z F
22、IGURE 2. Preload truth table. L SP Regi Ster-Output pin Hi-Z Regi Ster-Output pin Hi-Z Register-Output pin Hi-Z Register-Output pin Hi-Z Hi-Z Preload Hi-Z Hi-Z Preload Hi-Z Hi-2 Preload Hi-Z Hi-Z Preload Hi-Z DESC FORM 193A SEP a7 4 U. S. GOVERNMENT PRINTING OFFICE 1W-Y-w)4 Provided by IHSNot for Re
23、saleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE ELECTRONICS SUPPLY CENTER REVISION LEVEL SHEET 7 I DAYTON, OHIO 45444 t U. S. (MVERHMENT PRIKTINQ OFFICE: 1988-fHOg04 IESC FORM 193A SEP 87 Provided by IHSNot for ResaleNo reproduction or networking permitted without li
24、cense from IHS-,-,-SMD-5962-70708 57 9779996 0001285 O I STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON. OHIO 45444 E SIZE A 5962-90708 REVISION LEVEL SHEET 8 Device type O1 Fractional twos complement notation Binary point I O I IIIIIIII I Signal Digit value Signal Digit valu
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- DLASMD596290708REVA1996MICROCIRCUITDIGITALCMOS8X8MULTIPLIERMONOLITHICSILICON 硅单块 X8 倍增器 互补 金属 氧化物 半导体

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