DLA SMD-5962-90669-1992 MICROCIRCUIT DIGITAL FAST CMOS BINARY UP DOWN COUNTER TTL COMPATIBLE MONOLITHIC SILICON《硅单片 TTL可兼容输入 二进升值 降值计数器 高速氧化物半导体数字微型电路》.pdf

《DLA SMD-5962-90669-1992 MICROCIRCUIT DIGITAL FAST CMOS BINARY UP DOWN COUNTER TTL COMPATIBLE MONOLITHIC SILICON《硅单片 TTL可兼容输入 二进升值 降值计数器 高速氧化物半导体数字微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-90669-1992 MICROCIRCUIT DIGITAL FAST CMOS BINARY UP DOWN COUNTER TTL COMPATIBLE MONOLITHIC SILICON《硅单片 TTL可兼容输入 二进升值 降值计数器 高速氧化物半导体数字微型电路》.pdf（19页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDREV SHEETREVSHEET 15 16 17 18REV STATUSOF SHEETSREVSHET 123456789101121314PMIC N/APREPARED BY Marcia B. Kelleher DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 STANDARDIZEDMILITARYDRAWINGTHIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAND AGEN

2、CIES OF THEDEPARTMENT OF DEFENSEAMSC N/A CHECKED BYMonica L PoelkingMICROCIRCUIT, DIGITAL, FAST CMOS,BINARY UP/DOWN COUNTER, TTL COMPATIBLE, MONOLITHIC SILICONAPPROVED BYMichael A. FryeDRAWING APPROVAL DATE92-04-07SIZEACAGE CODE672685962-90669REVISION LEVELSHEET 1 OF 18DESC FORM 193JUL 91 5962-E079D

3、ISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDIZEDMILITARY DRAWINGDEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OHIO 45444SIZEA5962-90669REVISION LEVEL SHEET2DESC FO

4、RM 193AJUL 911. SCOPE1.1 Scope. This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two productassurance classes consisting of military high reliability (device classes B, Q, and M) and space application (device classes S and V),and a choice of case outli

5、nes and lead finishes are available and are reflected in the Part or Identifying Number (PIN). Device classM microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use ofMIL-STD-883 in conjunction with compliant non-JAN devices“. When avail

6、able, a choice of radiation hardness assurance (RHA)levels are reflected in the PIN.1.2 PIN. The PIN shall be as shown in the following example:5962 - 90669 01 M E X G0DG0D G0DG0D G0DG0DG0DG0D G0DG0D G0DG0DG0D G0D G0D G0D G0D G0D Federal RHA Device Device Case Lead stock class designator type class

7、outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number 1.2.1 Radiation hardness assurance (RHA) designator. Device classes M, B, and S RHA marked devices shall meet theMIL-M-38510 specified RHA levels and shall be marked with the appropriate

8、 RHA designator. Device classes Q and V RHAmarked devices shall meet the MIL-I-38535 specified RHA levels and shall be marked with the appropriate RHA designator. A dash(-) indicates a non-RHA device.1.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:Device type

9、Generic number Circuit function01 54FCT193 Binary, up/down counter02 54FCT193A Binary, up/down counter1.2.3 Device class designator. The device class designator shall be a single letter identifying the product assurance level asfollows:Device class Device requirements documentationM Vendor self-cert

10、ification to the requirements for non-JAN class Bmicrocircuits in accordance with 1.2.1 of MIL-STD-883B or S Certification and qualification to MIL-M-38510Q or V Certification and qualification to MIL-I-385351.2.4 Case outline(s). For device classes M, B, and S, case outline(s) shall meet the requir

11、ements in appendix C ofMIL-M-38510 and as listed below. For device classes Q and V, case outline(s) shall meet the requirements of MIL-I-38535,appendix C of MIL-M-38510, and as listed below.Outline letter Case outlineE D-2 (16-lead, .840“ x .310“ x .200“), dual in-line packageF F-5 (16-lead, .440“ x

12、 .285“ x .085“), flat package2 C-2 (20-terminal, .385“ x .385“ x .100“), square chip carrier packageProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDIZEDMILITARY DRAWINGDEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OHIO 45444SIZEA5962-90669REVISION

13、 LEVEL SHEET3DESC FORM 193AJUL 911.2.5 Lead finish. The lead finish shall be as specified in MIL-M-38510 for classes M, B, and S or MIL-I-38535 for classes Q andV. Finish letter “X“ shall not be marked on the microcircuit or its packaging. The “X“ designation is for use in specifications whenlead fi

14、nishes A, B, and C are considered acceptable and interchangeable without preference.1.3 Absolute maximum ratings. 1/Supply voltage range (V ) - -0.5 V dc to +7.0 V dcCCInput voltage range (V ) - -0.5 V dc to V + 0.5 V dc 2/IN CCOutput voltage range (V ) - -0.5 V dc to V + 0.5 V dc 2/OUT CCDC input d

15、iode current (I ) - -20 mAIKDC output diode current (I ) - -50 mAOKDC output current - 100 mAMaximum power dissipation (P ) - 500 mW 3/DThermal resistance, junction-to-case, (G14 ) - See MIL-M-38510, appendix CJCStorage temperature range - -65G28C to +150G28CJunction temperature (T ) - +175G28CJLead

16、 temperature (soldering, 10 seconds) - +300G28C1.4 Recommended operating conditions.Supply voltage range (V ) - +4.5 V dc to +5.5 V dcCCMaximum low-level input voltage (V ) - 0.8 V dcILMinimum high-level input voltage (V ) - 3.0 V dc 4/IHCase operating temperature (T ) - -55G28C to +125G28CC1.5 Digi

17、tal logic testing for device classes Q and V. Fault coverage measurement of manufacturinglogic tests (MIL-STD-883, test method 5012) - XX percent 5/1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extendedoperation at the maximum levels may degrade performance

18、and affect reliability.2/ For V 6.5 Vdc, the upper bound is limited to V .CC CC3/ Must withstand the added P due to short circuit test, e.g., I .DOS4/ For dynamic operation of device types 01 and 02, a V level between 2.0 V and 3.0 V may be recognized by theseIHdevices as a high logic level input. F

19、or static operation of device types 01 and 02, a V G07 2.0 V will be recognized byIHthese devices as a high logic level input. Users are cautioned to verify that this change will not affect their system.5/ Values will be added when they become available.Provided by IHSNot for ResaleNo reproduction o

20、r networking permitted without license from IHS-,-,-STANDARDIZEDMILITARY DRAWINGDEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OHIO 45444SIZEA5962-90669REVISION LEVEL SHEET4DESC FORM 193AJUL 912. APPLICABLE DOCUMENTS2.1 Government specifications, standards, bulletin, and handbook. Unless otherwise specifi

21、ed, the following specifications,standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications andStandards specified in the solicitation, form a part of this drawing to the extent specified herein.SPECIFICATIONSMILITARYMIL-M-38510 - Microci

22、rcuits, General Specification for.MIL-I-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSMILITARYMIL-STD-480 - Configuration Control-Engineering Changes, Deviations and Waivers.MIL-STD-883 - Test Methods and Procedures for Microelectronics.BULLETINMILITARYMIL-BUL-103 -

23、List of Standardized Military Drawings (SMDs).HANDBOOKMILITARYMIL-HDBK-780 - Standardized Military Drawings.(Copies of the specifications, standards, bulletin, and handbook required by manufacturers in connection with specific acquisitionfunctions should be obtained from the contracting activity or

24、as directed by the contracting activity.)2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text ofthis drawing shall take precedence.3. REQUIREMENTS3.1 Item requirements. The individual item requirements for device class M shall

25、 be in accordance with 1.2.1 of MIL-STD-883,“Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ and as specified herein. The individualitem requirements for device classes B and S shall be in accordance with MIL-M-38510 and as specified herein. For device classesB a

26、nd S, a full electrical characterization table for each device type shall be included in this SMD. The individual item requirementsfor device classes Q and V shall be in accordance with MIL-I-38535, the device manufacturers Quality Management (QM) plan, andas specified herein.3.2 Design, constructio

27、n, and physical dimensions. The design, construction, and physical dimensions shall be as specified inMIL-M-38510 for device classes M, B, and S and MIL-I-38535 for device classes Q and V and herein.3.2.1 Terminal connections. The terminal connections shall be as specified on figure 1.3.2.2 Truth ta

28、ble. The truth table shall be as specified on figure 2.3.2.3 Logic diagram. The logic diagram shall be as specified on figure 3.3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electricalperformance characteristics and postirradi

29、ation parameter limits are as specified in table I and shall apply over the full case operatingtemperature range.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDIZEDMILITARY DRAWINGDEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OHIO 45444SIZEA5962-

30、90669REVISION LEVEL SHEET5DESC FORM 193AJUL 913.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical testsfor each subgroup are defined in table I.3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. Markin

31、g for device class M shall be in accordance withMIL-STD-883 (see 3.1 herein). In addition, the manufacturers PIN may also be marked as listed in MIL-BUL-103. Marking fordevice classes B and S shall be in accordance with MIL-M-38510. Marking for device classes Q and V shall be in accordance withMIL-I

32、-38535.3.5.1 Certification/compliance mark. The compliance mark for device class M shall be a “C“ as required in MIL-STD-883 (see3.1 herein). The certification mark for device classes B and S shall be a “J“ or “JAN“ as required in MIL-M-38510. The certificationmark for device classes Q and V shall b

33、e a “QML“ as required in MIL-I-38535.3.6 Certificate of compliance. For device class M, a certificate of compliance shall be required from a manufacturer in order to belisted as an approved source of supply in MIL-BUL-103 (see 6.7.3 herein). For device classes Q and V, a certificate of compliancesha

34、ll be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.7.2 herein). The certificate of compliance submitted to DESC-ECS prior to listing as an approved source of supply for this drawing shall affirmthat the manufacturers product meets, for d

35、evice class M the requirements of MIL-STD-883 (see 3.1 herein), or for device classesQ and V, the requirements of MIL-I-38535 and the requirements herein.3.7 Certificate of conformance. A certificate of conformance as required for device class M in MIL-STD-883 (see 3.1 herein) ordevice classes B and

36、 S in MIL-M-38510 or for device classes Q and V in MIL-I-38535 shall be provided with each lot of microcircuitsdelivered to this drawing.3.8 Notification of change for device class M. For device class M, notification to DESC-ECS of change of product (see 6.2herein) involving devices acquired to this

37、 drawing is required for any change as defined in MIL-STD-480.3.9 Verification and review for device class M. For device class M, DESC, DESCs agent, and the acquiring activity retain theoption to review the manufacturers facility and applicable required documentation. Offshore documentation shall be

38、 made availableonshore at the option of the reviewer.3.10 Microcircuit group assignment for device classes M, B, and S. Device classes M, B, and S devices covered by this drawingshall be in microcircuit group number 40 (see MIL-M-38510, appendix E).3.11 Serialization for device class S. All device c

39、lass S devices shall be serialized in accordance with MIL-M-38510.4. QUALITY ASSURANCE PROVISIONS4.1 Sampling and inspection. For device class M, sampling and inspection procedures shall be in accordance with section 4 ofMIL-M-38510 to the extent specified in MIL-STD-883 (see 3.1 herein). For device

40、 classes B and S, sampling and inspectionprocedures shall be in accordance with MIL-M-38510 and method 5005 of MIL-STD-883, except as modified herein. For deviceclasses Q and V, sampling and inspection procedures shall be in accordance with MIL-I-38535 and the device manufacturers QMplan.4.2 Screeni

41、ng. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall beconducted on all devices prior to quality conformance inspection. For device classes B and S, screening shall be in accordancewith method 5004 of MIL-STD-883, and shall be conducted on all devices p

42、rior to qualification and quality conformance inspection. For device classes Q and V, screening shall be in accordance with MIL-I-38535, and shall be conducted on all devices prior toqualification and technology conformance inspection.4.2.1 Additional criteria for device classes M, B, and S.a. Burn-

43、in test, method 1015 of MIL-STD-883.(1) Test condition A, B, C, or D. For device class M, the test circuit shall be submitted to DESC-ECS for review with thecertificate of compliance. For device classes B and S, the test circuit shall be submitted to the qualifying activity.(2) T = +125G28C, minimum

44、.Ab. Interim and final electrical test parameters shall be as specified in table IIA herein.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDIZEDMILITARY DRAWINGDEFENSE ELECTRONICS SUPPLY CENTERDAYTON, OHIO 45444SIZEA5962-90669REVISION LEVEL S

45、HEET6DESC FORM 193AJUL 91TABLE I. Electrical performance characteristics.G0DG0D G0D G0DG0D G0DTest G0D Symbol G0D Conditions G0DGroup A G0DDevice G0D Limits G0D UnitG0DG0D -55G28C G06 T G06 +125G28C G0Dsubgroups G0D type G0DG0D G0DCG0DG0D 4.5 V G06 V G06 5.5 V G0DG0DG0D Min G0D Max G0DCCG0DG0D unles

46、s otherwise specified G0DG0DG0D G0D G0D G0D G0D G0D G0D G0DG0DG0D G0DHigh level output G0DV G0DV = 4.5 V, G0DI = -300 A G0D 1,2,3 G0D All G0D 4.3 G0DG0D VOH CC OHvoltage G0DG0DV = 0.8 V, G0D G0D G0DG0DG0D G0DILG0DG0DV = 3.0 V G0D G0D G0DG0DG0D G0DIHG0DG0D G0DI = -12 mA G0D 1,2,3 G0D All G0D 2.4 G0DG

47、0DOHG0D G0D G0D G0D G0DG0DG0D G0D G0D G0D G0D G0D G0DG0DG0D G0DG0DG0D G0D 1/ G0D G0DG0DG0D G0D Low level output G0DV G0DV = 4.5 V, G0DI = 300 A G0D 1,2,3 G0D All G0DG0D 0.2 G0D VOL CC OLvoltage G0DG0DV = 0.8 V, G0D G0D G0DG0DG0D G0DILG0DG0DV = 3.0 V G0D G0D G0DG0DG0D G0DIHG0DG0D G0DI = 32 mA G0D 1,2,3 G0D All G0DG0D 0.5 G0DOLG0D G0D G0D G0D G0DG0DG0D G0D G0D G0D G0D G0DG0DG0D G0DClamp diode voltage G0DV G0DV = 4.5 V, I = -18 mA G0D 1,2,3 G0D All G0DG0D -1.2 G0D V IK CC ING0D