DLA SMD-5962-90518 REV A-1992 MICROCIRCUITS DIGITAL CMOS PROGRAMMABLE BIT-RATE GENERATOR MONOLITHIC SILICON《硅单片 可编程比特速率发生器 氧化物半导体数字微型电路》.pdf
《DLA SMD-5962-90518 REV A-1992 MICROCIRCUITS DIGITAL CMOS PROGRAMMABLE BIT-RATE GENERATOR MONOLITHIC SILICON《硅单片 可编程比特速率发生器 氧化物半导体数字微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-90518 REV A-1992 MICROCIRCUITS DIGITAL CMOS PROGRAMMABLE BIT-RATE GENERATOR MONOLITHIC SILICON《硅单片 可编程比特速率发生器 氧化物半导体数字微型电路》.pdf(21页珍藏版)》请在麦多课文档分享上搜索。
1、I MD-57b2-905LB REV A = 77b 33772 5TT NOTICE OF REVISION (NOR) (See MIL-S-480 for instructions) This revision described below has been authorized for the docmnt listed. Form Approved OHB NO. 0704-0188 MTE (m) 92/12/11 Public reporting burden for this collection is estimated to average 1 hour per res
2、ponse, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comnents regarding this burden estimate or any other aspect of this collection of information, including
3、suggestions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlirwton. VA 22202-4302. and to the Office of Information and Regulatory Affairs, Office of Management and Budget, Washing I q Art
4、 AA I 1. ORIGIMTUI WE AIO AWRESS Defense Electronics Supply Center Dayton, Ohio 45444-5277 2. CAGEm 67268 4. CAGEm 67268 7. REVISIOII LRTER (Current) initial 6. TITLE OF WcUEwi 3. Malno. 5962-R039-93 5. DOCWEIITNO. 59a2-90518 (Hew) A HICROCIRLUITS, DIGITAL, CHM PRGRAII(ABLE EIT-RATE (EMERATOR M“.ITH
5、IC SILILOII. SIGNATURE AND TITLE Monica L. Poelking CHIEF MICROELECTRONICS ERANCH REVISION COMPLETED (Signature) 9. CORFIGURATIOII ITEH (OR Susrar) TO WHIM ECP APPLIES DATE (YY“l) 92/12/11 DATE (YYMMOD) 10. DESCRIPTIM OF REVISIM Sheet 1: Revisions ltr columi: add “A“ Revisions description column; ad
6、d “Changes in accordance with Revisions date column: add “92-12-11“. Revision level block: add “A“. Revison status of sheet: for sheets 1,5 these tests shall have been fault graded in accordance with HIL-STD-883, test method 5012 (see 1.5 herein). For device c. Subgroup 4 (GIN and COUT) shall be mea
7、sured only for the initial test and after process or design changes which may affect capacitance. Sample size shall be five devices with no failures. 4.4.2 Group B inspection. The group B inspection end-point electrical parameters shall be as specified in table IIA herein. I I I I JUL 91 Provided by
8、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-TABLE IZA. Electrical test rwuirewents. I Test require#ents I I Sutigroups (per method 5005, table I) 1 (pe!r?!?!%535, table III) Device I Device I Device I Device I Device class class class M B S J parawters (see
9、 4.2) r Final electrical I parameters 113, I Csee 4.2I F1.2.3.7. class ctaso Q V Group A test 18;80;9; I requremnts 10 I? t10;1,t - 1o;ll- (see 4.4) I I l I I elect rica1 parameters (see 4.4) Group B end-point - 1 1,7,9 I 1,7,9 - 1 1,7,9 - rmaneters (see 4.4) I electrical paraiaeters (ses 4.4) .Grou
10、p D end-point 1,7/9 I electrical I I .I I I I JM raireters. (see 4.4) - 1/ PDA applies to subgroup 1. - 2/ PDA applies to subgroups 1 and 7. 1,7,9 1,7,9 1,?,9 1,7,9 t 4.4.3 Group C inspection. a. b. End-point electricat parameters shall be as specified in table IIA herein. Steady-state life test con
11、ditions, method 1005 of HIL-STD-883: (1) Test condition A, 6, C, or D. DESC-ECC for review with the certificate of coirpliance. For device classes E and S, the test circuit shall be sukitted to the qualifying activity. For device classes Q and V, the test circuit shall be submitted to DESC-ECC with
12、the certificate of compliance and under the control of the device manufacturers TRB in accordance with HIL-1-38535. For device class tt, the test circuit shall be submitted to (2) Th = *125OC, kiniw. (3) Test duration: ?,(loo hours, except as permitted by iaethd 1005 of HIL-STD-883. STANDARDIZED MIL
13、ITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 t SIZE 5962-90518 A REVISION LEVEL SHEET 16 ESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-. SMD-5762-90518 REV A 9999996 0033988 T3 = TABLE 116. Additional scre
14、eninn for device class V. I I I I J I I t I 2020 I 1 w)% I I I I (Particle impact I J noise detection I 1 00% I I I I Internal visual J I approved alternate I I 2023 I 1 00% I I I I I Nondestructive I I 1015 I 1 00% I I l I J I I 1 00A I I I I J I at t125C I I 2012 I 1 00% I I I I I Radiographic I I
15、 MIL-STD-883, test method I Lot requirement I I Test I 2010, condition A or I J bond pull IReverse bias burn-in I I 1015, total of 240 hours I I Burn-in I I I I L 4.4.4 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.5 Group E
16、 inspection. Group E inspection is required only for parts intended to be siarked as radiation hardness assured (see 3.5 herein). device class R shall be M and D. specified in the acquisition document. RHA levels for device classes 6, S, Q, and V shall be M, D, R, and H and for RHA quality conforman
17、ce inspection sample tests shall be performed at the RHA level a. RHA tests for device classes 6 and S for levels M, D, R, and H or for device class ri for levels H and D shall be performed through each level to determine at what levels the devices meet the RHA requirements. These RHA tests shall be
18、 performed for initial qualification and after design or process changes which may affect the RHA performance of the device. End-point electrical parameters shall be as specified in table IIA herein. Prior to total dose irradiation, each selected sample shall be assembled in its qualified package. p
19、ass the specified group A electrical parameters in table I for subgroups specified in table IIA herein. For device classes M, 6, and S, the devices shall be subjected to radiation hardness assured tests as specified in MIL-M-38510 for RHA level being tested, and meet the postirradiation end-point el
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