DLA SMD-5962-89973 REV H-2009 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER WIDEBAND FAST SETTLING HIGH GAIN MONOLITHIC SILICON.pdf
《DLA SMD-5962-89973 REV H-2009 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER WIDEBAND FAST SETTLING HIGH GAIN MONOLITHIC SILICON.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-89973 REV H-2009 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER WIDEBAND FAST SETTLING HIGH GAIN MONOLITHIC SILICON.pdf(11页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add case outline 2. Make changes to TC(VIO), PSRR, +RIN, VOUT, LSBW, GFPL, GFPH, GFR, NF, INV, SR, TRS, TRL, tests and footnote 1/ as specified under Table I. Delete subgroups 5 and 6 from final electrical test parameters as specified under Table
2、 II. Changes in accordance with notice of revision 5962-R309-92. 93-02-10 M. A. FRYE B Make changes to TC(+IIN) and TC(-IIN) tests as specified under Table I. Changes in accordance with notice of revision 5962-R167-93. 93-06-11 M. A. FRYE C Make changes to CMRR, NF, INV tests and delete footnote 3/
3、entirely as specified under Table I. Changes in accordance with notice of revision 5962-R013-95. 94-11-03 M. A. FRYE D Delete subgroup 4 from final electrical test parameters as specified under Table II. Changes in accordance with notice of revision 5962-R132-95. 95-05-17 M. A. FRYE E Delete CAGE co
4、de 64762. Make change to paragraph 1.3, VOUTand HD3 tests as specified under table I. Add new footnote to table I. Redrawn. - ro 97-09-30 R. MONNIN F Make change to IIN, VOUT, SSBW, GFPL, GFPH, GFR, HD2, HD3, and SR tests as specified under table I. - ro 99-01-21 R. MONNIN G Drawing updated to refle
5、ct current requirements. - ro 03-04-03 R. MONNIN H Update boilerplate paragraphs. - ro 09-09-01 C. SAFFLE THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV H H H H H H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY RICK C. OFFICER DEFENSE
6、 SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY SANDRA B. ROONEY APPROVED BY CHARLES E. BESORE MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER,
7、 WIDEBAND, FAST SETTLING, HIGH GAIN, MONOLITHIC SILICON DRAWING APPROVAL DATE 91-08-09 AMSC N/A REVISION LEVEL H SIZE A CAGE CODE 67268 5962-89973 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E472-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDA
8、RD MICROCIRCUIT DRAWING SIZE A 5962-89973 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-3
9、8535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-89973 01 P A Drawing number Device type (see 1.2.1) Case outline(see 1.2.2) Lead finish(see 1.2.3)1.2.1 Device type(s). The device type(s) identify the circuit function as follows: Dev
10、ice type Generic number Circuit function 01 CLC401 Operational amplifier, wideband, fast settling, high gain 02 EL2171 Operational amplifier, wideband, fast settling, high gain 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive des
11、ignator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Supply voltage (VS) 7 V dc Output current (IOUT) 70 mA Maximum power dissip
12、ation (PD) 1.2 W Junction temperature (TJ) . +175C Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) . +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) +100C/W 1.4 Recommended operating conditions. Supply
13、 voltage (VS) 5 V dc Gain range +7 to +40 and -1 to -40 Ambient operating temperature range (TA) -55C to +125C Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89973 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OH
14、IO 43218-3990 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of the
15、se documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electro
16、nic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk
17、, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulati
18、ons unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Ma
19、nufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-3853
20、5. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in acco
21、rdance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outlines. The case outlines shall be in a
22、ccordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full amb
23、ient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. 3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part sha
24、ll be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. 3.5.1 Certification/compl
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- DLASMD596289973REVH2009MICROCIRCUITLINEAROPERATIONALAMPLIFIERWIDEBANDFASTSETTLINGHIGHGAINMONOLITHICSILICONPDF

链接地址:http://www.mydoc123.com/p-699711.html