DLA SMD-5962-89686 REV A-2002 MICROCIRCUIT LINEAR HIGH-VOLTAGE HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS MONOLITHIC SILICON《硅单片 高压高电流达林顿晶体管阵列 线性微型电路》.pdf
《DLA SMD-5962-89686 REV A-2002 MICROCIRCUIT LINEAR HIGH-VOLTAGE HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS MONOLITHIC SILICON《硅单片 高压高电流达林顿晶体管阵列 线性微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-89686 REV A-2002 MICROCIRCUIT LINEAR HIGH-VOLTAGE HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS MONOLITHIC SILICON《硅单片 高压高电流达林顿晶体管阵列 线性微型电路》.pdf(10页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. - ro 02-12-04 R. MONNIN THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 PMIC N/A PREPARED BY JOSEPH
2、A. KERBY DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY CHARLES E. BESORE COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, HIGH-VOLTAGE, HIGH CURRENT, DARLINGTON TRANSISTOR AND
3、AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 89-12-27 ARRAYS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-89686 SHEET 1 OF 9 DSCC FORM 2233 APR 97 5962-E105-03 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHS
4、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89686 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements fo
5、r MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 5962-89686 01 V X Drawing number Device type (see 1.2.1) Case outline (see 1.2.2) Lead finish (see 1
6、.2.3) 1.2.1 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 2824 Eight-gate Darlington transistor array 1.2.2 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive
7、designator Terminals Package style V GDIP1-T18 or CDIP2-T18 18 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Output voltage (VCE) - 95 V dc Input voltage - 30 V dc Continuous col
8、lector current (IC) - 500 mA maximum Continuous base current (IB) - 25 mA maximum Power dissipation (PD) - 1.0 W 1/ Storage temperature range - -65C to +150C Junction temperature (TJ) - +175C Maximum package power dissipation (PD), (TA= +125C) - 330 mW Thermal resistance, junction-to-case (JC) - See
9、 MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Case V - 75C/W Case 2 - 130C/W 1.4 Recommended operating conditions. Ambient operating temperature range (TA) -55C to +125C _ 1/ Absolute maximum rating for power dissipation is for one Darlington pair only. Provided by IHSNot for ResaleNo
10、reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89686 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. Th
11、e following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto,
12、cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBO
13、OKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building
14、4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption
15、 has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certif
16、ied and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented
17、in the Quality Management (QM) plan may make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is re
18、quired to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein. 3.
19、2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Switching test circuit and waveforms. The switching test circuit and waveforms shall be as specified on figure 2. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical
20、performance characteristics are as specified in table I and shall apply over the full ambient operating temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89686 DEFENSE SUPPLY CENTER COLUMBUS
21、COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Output leakage current ICEXVCE= 95 V 1,2,3 01 100.0 A VCE= 95 V,
22、 VIN= 1 v 1 500.0 VCE= 95 V, VIN= 0.5 V 2 500.0 Collector-emitter saturation voltage VCE(sat)IC= 350 mA, IB= 500 A 1 01 1.6 V IC= 200 mA, IB= 350 A 1.3 IC= 100 mA, IB= 250 A 1.1 IC= 350 mA, IB= 500 A 2 1.8 IC= 200 mA, IB= 350 A 1.5 IC= 100 mA, IB= 250 A 1.3 IC= 350 mA, IB= 850 A 3 1.8 IC= 200 mA, IB
23、= 550 A 1.5 IC= 100 mA, IB= 350 A 1.3 Input voltage VIN(ON)VCE 2 V, IC= 125 mA 2 01 5.0 V VCE 2 V, IC= 200 mA 6.0 VCE 2 V, IC= 275 mA 7.0 VCE 2 V, IC= 350 mA 8.0 VCE 2 V, IC= 125 mA 1,3 6.0 VCE 2 V, IC= 200 mA 8.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or network
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