DLA SMD-5962-89644 REV D-2012 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device classes Q and V requirements and radiation hardened requirements. Add case outline 2. -ro 00-07-17 R. MONNIN B Drawing updated to reflect current requirements. -rrp 05-01-20 R. MONNIN C Update drawing to current requirements of MIL-PRF

2、-38535. -rrp 11-07-19 C. SAFFLE D Add device type 02. Delete radiation exposure circuit. - ro 12-05-31 C. SAFFLE REV SHEET REV SHEET REV STATUS REV D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY RICK C. OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:

3、/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY CHARLES E. BESORE APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 93-

4、05-24 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-89644 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E330-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89644 DLA LAND AND MARITIME COLUMBUS, OHIO 43

5、218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are refl

6、ected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - 89644 01 P A Federal stock class designator RHA designator (see 1.2

7、.1) Device type (see 1.2.2) Case outline (see 1.2.4) Lead finish (see 1.2.5) / / Drawing number For device class V: 5962 R 89644 01 V P A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see

8、1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the ap

9、propriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 AD844 Operational amplifier 02 AD844 Operational amplifier 1.2.3 Device class designator. The device clas

10、s designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class

11、 Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or netwo

12、rking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89644 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Desc

13、riptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line package 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ra

14、tings. 1/ Supply voltage (VS) . 18 V Common-mode input voltage VSOutput short circuit duration Indefinite Differential input voltage . +VSand VSInternal power dissipation (PD): 2/ Case P . 1.3 W Case 2 . 1.0 W Junction temperature (TJ) . +175C Lead temperature (soldering, 60 seconds) +300C Storage t

15、emperature range . -65C to +150C Thermal resistance, junction-to-case (JC): Cases P and 2 . +35C/W Thermal resistance, junction-to-ambient (JA): Case P . +110C/W Case 2 . +100C/W 1.4 Recommended operating conditions. Positive supply voltage (+VS) +15 V Negative supply voltage (-VS) . -15 V Ambient o

16、perating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device type 01 . 100 krads(Si) 3/ Maximum total dose available (dose rate 10 mrads(Si)/s): Device type 02 . 50 krads(Si) 4/ _ 1/ Stresses above the absolute maximum r

17、ating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Maximum internal power dissipation is specified so that TJdoes not exceed +175C at an ambient temperature of +25C. Derate the P package at 8.7 mW/C. Derate the

18、2 package at 10 mW/C. 3/ Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 4/ Device type

19、02 radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883 method 1019, condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89644 DLA LAND

20、AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise spe

21、cified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - I

22、nterface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardi

23、zation Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes ap

24、plicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Managem

25、ent (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, constructio

26、n, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein . 3.2

27、.2 Terminal connections. The terminal connections shall be as specified on figure 1 . 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upo

28、n request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range

29、. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be m

30、arked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be

31、in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89644 DLA LAND AND MARITIME COLUMBUS, OHIO 4

32、3218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Ce

33、rtificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in

34、order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V,

35、the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall

36、be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects t

37、his drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime s agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made availab

38、le onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without licen

39、se from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89644 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C VS= 15 V Group A subgroups Device type Limits 3/

40、Unit unless otherwise specified Min Max Input offset voltage VIOVCM= 0 V 4/ 1 01, 02 -300 +300 V 2,3 -500 +500 M,D,P,L,R 1 01 -1000 +1000 M,D,P,L 02 -1000 +1000 Power supply rejection ratio +PSRR +VS= +5 V to +18 V, 5/ -VS= -15 V 1,2,3 01, 02 20 V/V -PSRR -VS= -5 V to -18 V, 5/ +VS= +15 V 20 Output

41、voltage swing +VOUTRL= 500 5/ 1,2,3 01, 02 10 V -VOUT-10 Quiescent current IQVOUT= 0 V 5/ 1 01, 02 7.5 mA 2,3 9.5 Input bias current -IIBVCM= 0 V 6/ 1 01, 02 -450 +450 nA 2,3 -2500 +2500 M,D,P,L,R 1 01 -2500 +2500 M,D,P,L 02 -2500 +2500 +IIBVCM= 0 V 6/ 1 01, 02 -400 +400 2,3 -1300 +1300 M,D,P,L,R 1

42、01 -1300 +1300 M,D,P,L 02 -1300 +1300 Common mode input voltage range +IVR5/ 7/ 1,2,3 01, 02 +10 V -IVR-10 Open loop transresistance TZ VOUT= 10 V, 1 01, 02 2.2 M RL= 500 2,3 1.3 M,D,P,L,R 1 01 1.3 M,D,P,L 02 1.3 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networki

43、ng permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89644 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C VS= 15 V Grou

44、p A subgroups Device type Limits 3/ Unit unless otherwise specified Min Max Input bias current versus supply +TCS5 V to 18 V 5/ 8/ 9/ 4 01, 02 150 nA/V 5,6 200 -TCS4 250 5,6 300 Input bias current versus common-mode +TCCMVCM= 10 V 5/ 6/ 8/ 4 01, 02 150 nA/V 5,6 200 -TCCM4 160 5,6 200 Common-mode rej

45、ection ratio CMRR VCM= 10 V 5/ 8/ 4,5,6 01, 02 35 V/V 1/ Device type 01 supplied to this drawing has been characterized through all levels P, L, and R of irradiation. Device type 02 supplied to this drawing has been characterized through level “L” of irradiation. However, device type 01, is only tes

46、ted at the “R” level and device type 02 is only tested at the ”L” level. Pre and Post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/ Device type 01 may be dose rate sensitive in a space

47、environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A for device type 01 and condition D for device type 02. Device type 02 is tested at low dose rate

48、. 3/ The magnitude convention is used to establish the limits for these tests. 4/ Input offset voltage parameters are guaranteed after the equivalent of five minutes at TA= +25C. 5/ This parameter is not tested post irradiation. 6/ Bias current parameters are guaranteed maximum after the equivalent of five minutes at TA= +25C. 7/ This parameter is guaranteed by testing common-mode rejection ratio. 8/ Guaranteed, if not tested, to the limits specified in table I herein. 9/ Test condit