DLA SMD-5962-87777 REV B-2001 MICROCIRCUIT LINEAR TRANSISTOR ARRAYS MATCHED PAIR MONOLITHIC SILICON《硅单片晶体管阵列 配对线性微电路》.pdf
《DLA SMD-5962-87777 REV B-2001 MICROCIRCUIT LINEAR TRANSISTOR ARRAYS MATCHED PAIR MONOLITHIC SILICON《硅单片晶体管阵列 配对线性微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-87777 REV B-2001 MICROCIRCUIT LINEAR TRANSISTOR ARRAYS MATCHED PAIR MONOLITHIC SILICON《硅单片晶体管阵列 配对线性微电路》.pdf(10页珍藏版)》请在麦多课文档分享上搜索。
1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDA Change for 1.3 collector-emitter voltage maximum limit. Change limits andconditions for base offset voltage, change in emitter-base offset, collectorleakage, base leakage, current gain and gain match tests.89-08-25 M. A. FryeB Drawing updated to ref
2、lect current requirements. Editorial changes throughout. drw01-01-16 Raymond MonninThe original first page of this drawing has been replaced.REVSHEETREVSHEETREV STATUS REV BBBBBBBBBOF SHETS SHET 123456789PMIC N/A PREPARED BYJoseph A. KerbyDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHEC
3、KED BYRay MonninCOLUMBUS, OHIO 43216http:/www.dscc.dla.milTHIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMichael A. Frye MICROCIRCUIT, LINEAR, TRANSISTORARRAYS/MATCHED PAIR, MONOLITHIC SILICONAND AGENCIES OF THEDEPARTMENT OF DEFENSEDRAWING APPROVAL DATE87-12-11AMSC N/AREVISION LEVELBSI
4、ZEACAGE CODE672685962-87777SHEET1 OF 9DSCC FORM 2233APR 97 5962-E177-01DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-87777DEFENSE
5、 SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET2DSCC FORM 2234APR 971. SCOPE1.1 Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits inaccordance with MIL-PRF-38535, appendix A.1.2 Part or Identifying Number (PIN). The
6、complete PIN is as shown in the following example:5962-87777 01 X ADrawing number Device type(see 1.2.1)Case outline(see 1.2.2)Lead finish(see 1.2.3)1.2.1 Device type. The device type identify the circuit function as follows:Device type Generic number Circuit function01 LM194 Transistor supermatch p
7、air1.2.2 Case outline. The case outline is as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleX See figure 2 6 Similar to a TO-99 can1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A.1.3 Absolute maximum ratings. Co
8、llector current 20 mACollector-emitter voltage 35 V dcBase-emitter current G7210 mAMaximum power dissipation (PD). 500 mWLead temperature (soldering, 60 seconds) +300G71CStorage temperature range -65G71C to +150G71CThermal resistance, junction-to-case (G54JC). 70G71C/WThermal resistance, junction-to
9、-case (G54JA). 230G71C/W1.4 Recommended operating conditions.Ambient operating temperature range (TA) -55G71C to +125G71CProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-87777DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS
10、, OHIO 43216-5000REVISION LEVELBSHEET3DSCC FORM 2234APR 972. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form apart of this drawing to the extent specified herein. Unless otherwise specified, the issues of these do
11、cuments are those listedin the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited inthe solicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEF
12、ENSEMIL-STD-883 - Test Method Standard Microcircuits.MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings.MIL-HDBK-780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the speci
13、fication, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the textof this drawing ta
14、kes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices an
15、d as specified herein. Product built to this drawing that is produced by a Qualified ManufacturerListing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers
16、approved program plan and qualifyingactivity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) planmay make modifications to the requirements herein. These modifications shall not affect form, fit, or function of the device. These modifications sha
17、ll not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used.3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be asspecified in MIL-PRF-
18、38535, appendix A and herein.3.2.1 Case outline. The case outline shall be in accordance with 1.2.2 herein and figure 2.3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical
19、 performance characteristics areas specified in table I and shall apply over the full ambient operating temperature range.3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electricaltests for each subgroup are described in table I.Pr
20、ovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-87777DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET4DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics.Test SymbolCondit
21、ions-55G71C G64 TA G64 +125G71CGroup AsubgroupsDevicetypeLimits UnitMin MaxEmitter: Base offset voltageVBEO VCB = 0 V, IC = 1 mA 1 All G72100 G50VVCB = 35 V, IC = 1 mA 1 All G721002, 3 G72350VCB = 0 V, IC = 0.3 mA 1 All G72100VCB = 0 V, IC = 100 G50A 1Al G72100VCB = 35 V, IC = 100 G50A 1Al G721002,
22、3 G72350VCB = 0 V, IC = 10 G50A 1Al G72100VCB = 35 V, IC = 10 G50A 1Al G72100VCB = 0 V, IC = 1 G50A 1Al G72100VCB = 35 V, IC = 1 G50A 1Al G72100Change in emitter-baseDeltaVCB = 0 to 35 V, IC = 1 mA 1 All G7225 G50Voffset VBEOVCB = 0 to 35 V, IC = 100 G50A 1Al G7225VCB = 0 to 35 V, IC = 10 G50A 1Al G
23、7225VCB = 0 to 35 V, IC = 1 G50A 1Al G7225VCB = 0 V, IC = 1 to 300 G50A 1Al G7225Collector: Collector leakageICCX VCB = 35 V, COLL 1 to COLL 2 1 All G722 nAVCB = 35 V, COLL 2 to COLL 1 1 All G722Collector: Base leakageICBX VCB = 35 V, COLL 1 to BASE 1 1 All G720.25 nAVCB = 35 V, COLL 2 to BASE 2 1 A
24、ll G720.25Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-87777DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELBSHEET5DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics - con
- 1.请仔细阅读文档,确保文档完整性,对于不预览、不比对内容而直接下载带来的问题本站不予受理。
- 2.下载的文档,不会出现我们的网址水印。
- 3、该文档所得收入(下载+内容+预览)归上传者、原创作者;如果您是本文档原作者,请点此认领!既往收益都归您。
下载文档到电脑,查找使用更方便
10000 积分 0人已下载
下载 | 加入VIP,交流精品资源 |
- 配套讲稿:
如PPT文件的首页显示word图标,表示该PPT已包含配套word讲稿。双击word图标可打开word文档。
- 特殊限制:
部分文档作品中含有的国旗、国徽等图片,仅作为作品整体效果示例展示,禁止商用。设计者仅对作品中独创性部分享有著作权。
- 关 键 词:
- DLASMD596287777REVB2001MICROCIRCUITLINEARTRANSISTORARRAYSMATCHEDPAIRMONOLITHICSILICON 单片 晶体管 阵列 配对 线性

链接地址:http://www.mydoc123.com/p-699169.html