DLA SMD-5962-87732 REV B-1991 MICROCIRCUITS DIGITAL HIGH SPEED CMOS J-K FLIP-FLOP WITH PRESET AND CLEAR MONOLITHIC SILICON《硅单片J-K触发器与预设和明确高速互补型金属氧化物半导体数字微电路》.pdf
《DLA SMD-5962-87732 REV B-1991 MICROCIRCUITS DIGITAL HIGH SPEED CMOS J-K FLIP-FLOP WITH PRESET AND CLEAR MONOLITHIC SILICON《硅单片J-K触发器与预设和明确高速互补型金属氧化物半导体数字微电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-87732 REV B-1991 MICROCIRCUITS DIGITAL HIGH SPEED CMOS J-K FLIP-FLOP WITH PRESET AND CLEAR MONOLITHIC SILICON《硅单片J-K触发器与预设和明确高速互补型金属氧化物半导体数字微电路》.pdf(16页珍藏版)》请在麦多课文档分享上搜索。
1、 - SND-5962-87732 REV B 59 W 7999996 0006833 4 W b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT DESC-ECC 12. ACTIVITY ACCQQLISIIIYU REVISIOY DESC-ECC E - i! SIGNATURE AND TITLE DATE (YYWD) add IlBIl Revisions description colum; add Changes in accordencc with NOR 5962- RO 10-92“. Revisions d
2、ate colum; edd 91-10-21w. In the recoinnended operating conditions for min. clock pike uidth (tul) change Iirnit for VCC 6.0 V at -55.C and +125*C from 20 ns to 21 ns. For mimm frequency (fw) change limits for VCC = 2.0 V It +25*C from 5.4 MHz to 5 MHz and VCC = 6.0 V at +25*C from 32 MHz to 31 MHz.
3、 Change (fmx) at +125*C Mid -55C for VCC = 2.0 V from 3.6 MHz to 3 HHz and at +125*C and -55.C for VCC = 6.0 V from 21 HHz to 20 MHz. Sheet 7: Change propagation delay tim (tPHL2,tPLH2) at +125*C and -55C, for VCC = 6.0 V from 43 ns to 40 ns. Change propegation delay time (tPHL3, tPLH3) at +125*C an
4、d -55*C, for VCC = 6.0 V from 43 ns to 40 ns. Sheet 3: v Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-57bZ-fl7732 REV B 59 9 797779b 0006832 b W I REVISIONS STANDARDIZED AND AGENCIES OF THE DEPAFiTMENT OF DEFENSE ii US. GVTNhWl PRINTING OFFKI:
5、 1987 - 748-119/6091 I DESC FORM 193 SEP a1 DISTRiBUTION STATEMENT A. Approved for public release; distribution Is unlimited. 5902-El760 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1. SCOPE 1 1.2.1 Device type. The device type shall identify the
6、circuit function as follows: 1.1 Scope. This drawing describes device requirements for class B microcircuits in accordance with 1.mf MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“. I o1 54HC76 J-K flip-flop with preset and clear I I 1.2 Part number
7、. The complete part number shall be as shown In the following example: 1 1.2.2 Case outlines. The case outlines shall be as designated in appendix C OP MIL-M-38510, and las follows: 5962-87732 o1 E X I T I- I Outline letter I Lead ti ni sn per I tase outline I Uevice rype I m“awi ng numDer (1.2.1) (
8、1.2.2) MI L-M-385 10 STANDARDIZED SIZE 5962-87732 SHEET A MILITARY DRAWING MFENSE ELECTRONICS SUPPLY CENTER REVISION LEVEL i DAYTON, OHIO 45444 A 2 Device type Generic number Circuit function Case owtl ine E 2 D-2 (16-lead, .840“ x .310“ x .200“), dud-in-line package C-2 (20-terminal, .358“ x .358“
9、x .loo“), square chip carrier package 1.3 Absolute maximum ratings. l./ Supply voltage range - - - - - - - - - - - - - - - - OC input voltage - - - - - - - - - - - - - - - - DC output voltage - - - - - - - - - - - - - - - - - Clamp diode current - - - - - - - - - - - - - - - - OC output current (per
10、 pin) - - - - - - - - - - - - OC Vcc or GND current (per pin) - - - - - - - - - - Storage temperature range - - - - - - - - - - - - - Maximum power dissipation fP1 i/ - - - - - - - - - Lead temperature (soldering, 10 seconds) - - - - - - Thermal resfstance, Junction-to-case (eJC) - - - - - Junction
11、temperature (TJ) - - - - - - - - - - - - - -0.5 V -0.5 V dc to VCC * 0.5 V dc -0.5 V dc to Vcc + 0.5 V dc t20 mA *25 mA *50 mA -656 to +15OoC 500 mW +26OoC See VIL-M-38510, appendix C +175 C dc to +7.0 V dC 1.4 Recommended operating conditions, ess otherwise specified, all voltages are referenced to
12、 ground. Tr. = +lOOC to +125C, derate Itnearly at 12 mW/ C. * U. S. QOVERNMENT PRINTING OFFICE: 1888-549.904 DESC FORM 19317 SEP 87 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-* SMD-5962-B7732 REV B 59 m 9999996 0006834 T m w- ii u. s. GOVERNMENT
13、 PRINTING OFFICE 1988-549.m DESC FORM 193A SEP 87 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-2 APPLICABLE DOCUNENTS 2.1 Government specification, standard, and bulletin. Unless otherwise specifjed, the following specification, stdndard, and bull
14、etin of the issue listed in that Sssue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. SP KIF ICATI ON MI LITA RY MI L-M-bb510 - Microcircuits, tieneral Speclfication for. STANDARD MI LITARY
15、 MI L-STD-883 - Test Methods and Procedures for Microelectronics. BULLETIN MILITAkY MI L-BUL-103 - List of Standardized Military Drawings (SbIDs). (Copies of the specification, standard, and bulletin required by manufacturers in connection with specific acquisition functions should be obtained from
16、the contracting activity or as directed by the Contracting activity. 1 references cited herein, the text of this drawing shall take precedence. 2.2 Order of precedence, 5. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with 1.2.1 of BIIL-STD-883, “Provisi
17、ons for the use of MIL-STD-883 in conjunction with cmpl iant non-JAN devices“ and as specified herein. In the event of a conflict between the text of this drawing and the 3.2 Desi yn, constructi.on, and physical dimensions. The design, construction, and pwsical dimensions shall be as specified in MI
18、L-M-38510 and herein. 3.2.1 Terminal connections. 3.2.2 Truth table. The truth table shall be as specified on figure 2. 3.2.3 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.4 Case outline. The case outline shall be in accordance witti 1.2.2 herein. 3.3 Electrlcal perfomance
19、characteri stics. Unless otherwise specified, the electrical The teminal connections shall be as specified on figure 1. performance characteristics are as specified in table I and apply over the full recommended case operdting temperature range. SIZE A 5962-87732 STANDARDIZED MILITARY DRAWING I DEFE
20、NSE UECTRONICS SUPPLY CENTER )AYTON. OH0 45444 I REVISION LEVEL I SHEET A 4 h U. C. QOVERNUEHT PRINTING OFFICE 1088-540-904 ESC FORt.1 193A SEP 87 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- SMD-5762-87732 REV B 59 W 9999996 0006836 3 STANDARDIZ
21、ED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 TABLE I. Electrical performance characteristics. SIZE 5962-87732 A SHEET REVISION LEVEL A 5 I I I I I I I I I I I Min I Max I I I I I I I I I nimum or I I I I I I I VIL maximum I I 1-1 I I I vcc = 4.5 v 1 I 4.4 I 1 I II01 5 20
22、PA I I I I I I I I I m I I I I Vcc = 6.0 V I I 5.9 I I I l I I I I I - I I 1101 4.0 fl I Vcc = 4.5 V I I 3.7 I I I I I I I I I I I I I I I 1-1 I I 1101 5 5.2 RA I Vcc = 6.0 V I I 5.2 I I I I I I I I l 1 I I I I I I vcc = 2.0 v I 1, 2, 3 I I minimum or I I I I I I VIL maximum I I - l 0.1 I I I I I I
23、vcc = 4.5 v I I I I 1101 5 20 UA I I I I I I I - I I VCC = 6.0 V I I I I I I I I I I I I m I I 1101 5 4.0 m9 I VCC = 4.5 V I I I 0.4 I I I I I I I I I I I m I I IIoI 5 5.2 IA I VCC = 6.0 V I I I 0.4 I I I I I I I I I I I I I I I I I I I I I I m I m I I I I I I I I I I I VCC = 6.0 V I I 4.2 I I I I I
24、 I I I I I I I I I I I I I I I I I I I I III I I 0.9 I I I I vcc = 4.5 v I I I I I I I I I I I I 1-1 I 1 I VCC = 6.0 V I I 1 1.2 1 I I I I I I I I Uni Conditions IGroup A I Limits I subgroupsl I-l-I I -55OC TC 5 +125“C i/ - - I Test High level output voltage IVOH ,I IJN = VIH I I vcc = 2.0 v I 1, 2,
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