DLA SMD-5962-87710 REV K-2008 MICROCIRCUIT LINEAR LOW POWER DUAL OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add one vendor, CAGE 01295. Add case outline 2. Delete one vendor, CAGE 18324. Editorial changes throughout. 91-12-11 M. A. FRYE B Add device class “V“ devices. Add TABLE IIB for delta limits. Delete vendor CAGE 04713. 97-09-23 R. MONNIN C Add ra

2、diation hardened requirements. - ro 99-01-28 R. MONNIN D Change total dose value for radiation requirements under 1.5. - lgt 99-03-15 R. MONNIN E Add case outline X. - ro 00-03-23 R. MONNIN F Modify paragraph 3.2.4. Remove radiation test circuit. - rrp 00-11-03 R. MONNIN G Drawing updated to reflect

3、 current requirements. - ro 02-10-17 R. MONNIN H Add RHA designator “R” level devices. Make changes to 1.5 and Table I. Delete footnote 2/ “This parameter is not tested post irradiation” under Table I. Delete 4.4.4.1.1 and 4.4.4.2. - ro 06-04-05 R. MONNIN J Add device type 03 tested at Low Dose Rate

4、. Make changes to 1.2.2, 1.5, Table I, figure 1, Table IIB, and 4.4.4.1. - ro 08-10-07 R. HEBER K Add paragraph 3.1.1 and microcircuit die Appendix A. Make changes to ICC, VIO, CMRR, +IIB, -IIB, IIO, PSRR, and AVStests as specified under Table I for device type 03. Make changes to Table IIB for devi

5、ce type 03. - ro 08-12-09 R. HEBER THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV K K K K K K K K K SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV K K K K K K K K K K K K K K OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY JOSEPH H. KERBY CHECKED BY D

6、. A. DiCENZO DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY ROBERT P. EVANS STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 87-12-01 MICROCIRCUIT, LINEAR, L

7、OW POWER DUAL OPERATIONAL AMPLIFIER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL K SIZE A CAGE CODE 67268 5962-87710 SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E061-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A

8、5962-87710 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of

9、 case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - 87710 01

10、 G A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Case outline (see 1.2.4)Lead finish (see 1.2.5) / / Drawing number For device class V: 5962 R 87710 02 V G A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorC

11、ase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, app

12、endix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LM158 Low power, dual operational amplifier 02 LM1

13、58A Low power, dual operational amplifier 03 LM158A Low dose rate radiation hardened low power, dual operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been

14、 added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B

15、 microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87710 DEFENSE SUPPLY CENTER COLUMBUS COLUMBU

16、S, OHIO 43218-3990 REVISION LEVEL K SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can P GDIP1-T8 or CDIP2-T8 8 Dual-in-line X GDFP1-G10 10 Flat pack

17、 with gull wing leads 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Supply voltage (V+) . 32 V or 16 V Input voltage . -0.3 V

18、 to +32 V Differential input voltage 32 V Storage temperature range . -65C to +150C Maximum power dissipation (PD): 2/ Cases G and P 830 mW Case X 500 mW Case 2 . 1375 mW Lead temperature (soldering, 10 seconds) +300C Case temperature for 60 seconds . +260C Junction temperature (TJ) . +150C Thermal

19、resistance, junction-to-case (JC): Class M . See MIL-STD-1835 Class V (case G) . 42C/W Class V (case P) . 23C/W Class V (case X) . 33C/W Thermal resistance, junction-to-ambient (JA): Class M (case G) 155C/W Class M (case P) . 180C/W Class M (case 2) . 65C/W Class V (case G) . 155C/W (measured in sti

20、ll air) 80C/W (measured in 500 linear feet/minute air flow) Class V (case P) . 132C/W (measured in still air) 81C/W (measured in 500 linear feet/minute air flow) Class V (case X) . 195C/W (measured in still air) 131C/W (measured in 500 linear feet/minute air flow) 1.4 Recommended operating condition

21、s. Operating supply voltage range (V+) 16 V Ambient operating temperature range (TA) . -55C to +125C _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Must withstand th

22、e added PDdue to short-circuit test (e.g., IOS). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87710 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 4 DSCC FORM 2234 APR 97 1

23、.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads (Si)/s): Device type 02 RHA level R . 100 Krads (Si) 3/ Maximum total dose available (dose rate = 10 mrads (Si)/s): Device type 03 RHA level R . 100 Krads (Si) 4/ The manufacturer supplying device type 03 RHA parts on this

24、drawing has performed a characterization test to demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) according to MIL-STD-883 Method 1019 paragraph 3.13.1.1. Therefore this part may be considered ELDRS free. However, the manufacturer will continue to perform low dose

25、 rate lot acceptance testing on each wafer lot or wafer until characterization testing has been performed according to test method 1019 of MIL-STD-883. Since the redesigned part did not demonstrate ELDRS per Method 1019 and the previously tested device type 02 was not tested for ELDRS, device type 0

26、3 will be added to distinguish it from the 02 device type. 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these

27、 documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electroni

28、c Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk,

29、700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulation

30、s unless a specific exemption has been obtained. _ 3/ For device type 02, this part may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-88

31、3, method 1019, condition A. 4/ For device type 03, this part has been tested and does not demonstrate low dose rate sensitivity. These parts may be sensitive in a high dose environment. Radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, m

32、ethod 1019, condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87710 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 5 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item

33、requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as describe

34、d herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction,

35、and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 T

36、erminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Logic diagram. The logic diagram shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control an

37、d shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in tabl

38、e I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN l

39、isted in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall

40、 still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required

41、 in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of t

42、his drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of

43、 supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as requir

44、ed for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herei

45、n) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documen

46、tation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleN

47、o reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87710 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL K SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -5

48、5C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Power supply current ICCV+ = 5 V 1,2,3 01, 02 1.2 mA M,D,P,L,R 1 02 1.5 V+ = 5 V, RL= 100 k, VO= 1.4 V 1,2,3 03 1.2 V+ = 30 V 1 01, 02 3 2,3 4 V+ = 30 V, RL= 100 k, 1 03 3 VO= 1.4 V 2,3 4 Output voltage high VOHV+ = 30 V, RL= 2 k 1,2,3 All 26 V V+ = 30 V, RL= 10 k 03 27 Output voltage low VOLV+ = 30 V, RL= 10 k 1,2,3 01 20 mV 1 02, 03 40 2,3 100 V+ = 30 V, ISINK= 1 A 1,2,3 01 20 1 02, 03 40 2,3 100 V+ = 5 V, RL= 10 k 1 03 40 2,3 100 Output sink current ISINKV+ = 15 V, VOUT= 200 m