DLA SMD-5962-87699 REV J-2013 MICROCIRCUIT DIGITAL ADVANCED CMOS QUAD TWO-INPUT NAND GATE TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf
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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add B, S, Q, and V test limits. Change to one part-one part number format. Add ground bounce and latch-up immunity tests. Add 10.1 substitution statement. Editorial changes throughout. 92-07-10 Monica L. Poelking B Changes in accordance with NOR
2、5962-R041-93. 92-12-29 Monica L. Poelking C Changes in accordance with NOR 5962-R095-98. 98-04-24 Monica L. Poelking D Incorporate NOR 5962-R041-93 and NOR 5962-R095-98. Add V device class level. Add vendor CAGE code F8859. Add device type 03. Add case outlines X and Z. Add radiation features for de
3、vice type 01. Update boilerplate to MIL-PRF-38535 requirements. LTG 02-07-12 Thomas M. Hess E Add radiation features for device type 03 in section 1.5. Update the boilerplate to include radiation hardness assured requirements for device type 03. Editorial changes throughout. - jak 04-09-09 Thomas M.
4、 Hess E Add radiation features for device type 03 in section 1.5. Update the boilerplate to include radiation hardness assured requirements for device type 03. Editorial changes throughout. - jak 04-09-09 Thomas M. Hess F Change ICCLand ICCHmaximum limits I for device type 03 in table I. Correct the
5、 test circuit in figure 5. - jak 05-08-31 Thomas M. Hess G Add appendix A, microcircuit die. Update the boilerplate to MIL-PRF-38535 requirements and to include radiation hardness assurance requirements. - jak 07-03-07 Thomas M. Hess H Correct test condition VCCand value for VOH3in table IA. - PHN 0
6、7-10-16 Thomas M. Hess J Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. - LTG 13-09-24 Thomas M. Hess REV SHEET REV J J J J J J J J J J J J J SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 REV STATUS REV J J J J J J J J J J J J J J OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 1
7、3 14 PMIC N/A PREPARED BY Jeffery Tunstall DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Ray Monnin APPROVED BY Michael
8、 A. Frye MICROCIRCUIT, DIGITAL, ADVANCED CMOS, QUAD TWO-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 88-09-30 REVISION LEVEL J SIZE A CAGE CODE 67268 5962-87699 SHEET 1 OF 27 DSCC FORM 2233 APR 97 5962-E578-13 Provided by IHSNot for ResaleNo reproduction or networ
9、king permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87699 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (dev
10、ice classes M, B, and Q) and space application (device classes S and V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PI
11、N is as shown in the following example: 5962 F 87699 01 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes B, S, Q and V R
12、HA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2
13、 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACT00 Quad 2-input NAND gate, TTL compatible inputs 02 54ACT11000 Quad 2-input NAND gate, TTL compatible inputs 03 54ACT00 Quad 2-input NAND gate, TTL compatible inputs 1.2.
14、3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance wi
15、th MIL-PRF-38535, appendix A B, S, Q, or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14
16、or CDFP2-F14 14 Flat pack X CDFP3-F14 14 Flat pack E GDIP1-T16 or CDIP2-T16 16 Dual-in-line Z GDFP1-G14 14 Flat pack with gullwing leads 2 CQCC1-N20 20 Square leadless chip carrier Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT
17、 DRAWING SIZE A 5962-87699 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 3 DSCC FORM 2234 APR 97 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes B, S, Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings
18、. 1/ 2/ Supply voltage range (VCC) -0.5 V dc to +6.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+0.5 V dc Clamp diode current (IIK, IOK) . 20 mA DC output current (IOUT) . 50 mA DC VCCor GND current (ICC, IGND) . 100 mA 3/ Storage tem
19、perature range (TSTG) . -65C to +150C Maximum power dissipation (PD) . 500 mW Lead temperature (soldering, 10 seconds): Case outline X . +260C All other case outlines except case X +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C Case operating tempe
20、rature (TC) . -55C to +125C 1.4 Recommended operating conditions. 2/ 4/ Supply voltage range (VCC) . +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT) +0.0 V dc to VCCMaximum low level input voltage (VIL) . 0.8 V dc at VCC= 4.5 V dc 0.8 V dc at VCC= 5.5 V d
21、c Minimum high level input voltage (VIH) 2.0 V dc at VCC= 4.5 V dc 2.0 V dc at VCC= 5.5 V dc Case operating temperature range (TC). -55C to +125C Input rise and fall rate (tr, tf) maximum: VCC= 4.5 V . 10 ns/V VCC= 5.5 V . 8.0 ns/V Maximum high level output current (IOH) -24 mA Maximum low level out
22、put current (IOL) 24 mA 1.5 Radiation features. Device type 01: Maximum total dose available (dose rate = 50 300 rads (Si)/s) 100 krads (Si) No single Event Latch-up (SEL) occurs at LET (see 4.4.5.2) 120 MeV-cm2/mg 5/ Device type 03: Maximum total dose available (dose rate = 50 300 rads (Si)/s) 300
23、krads (Si) No single Event Latchup (SEL) occurs at LET (see 4.4.5.2) . 93 MeV-cm2/mg 5/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. The maximum junction temperature ma
24、y be exceeded for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 2/ Unless otherwise specified, all voltages are referenced to GND. 3/ For packages with multiple VCCand GND pins, this value represents the maximum total current flowing into or out
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