DLA SMD-5962-87694 REV G-2012 MICROCIRCUIT DIGITAL ADVANCED CMOS OCTAL D-TYPE FLIP-FLOP WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf
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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R097-98. 98-04-24 Monica L. Poelking B Add vendor CAGE F8859. Add device class V criteria. Editorial changes throughout. - gap 99-12-14 Raymond Monnin C Add case outline X. Add delta limits for class V devices.
2、 Editorial changes throughout - gap. 00-07-31 Raymond Monnin D Update boilerplate to MIL-PRF-38535 requirements. Make change to VOHdelta limit in table III. - jak 01-01-10 Thomas M. Hess E Add section 1.5, radiation features. Make corrections to the waveforms in figure 5. Update boilerplate to MIL-P
3、RF-38535 requirements and to include radiation hardness assured requirements. Editorial changes throughout. - LTG 05-04-14 Thomas M. Hess F Update radiation features in 1.5 and add SEP table IB. Update boilerplate to current MIL-PRF-38535 requirements. Editorial changes throughout. jak 11-12-05 Thom
4、as M. Hess G Update dimensions of case outline X to figure 1. - LTG 12-08-23 Thomas M. Hess REV SHEET REV G G G G G SHEET 15 16 17 18 19 REV STATUS REV G G G G G G G G G G G G G G OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Greg A. Pitz DLA LAND AND MARITIME COLUMBUS, OHIO
5、43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY D. A. DiCenzo APPROVED BY Michael A. Frye MICROCIRCUIT, DIGITAL, ADVANCED CMOS, OCTAL D-TYPE FLIP-FLOP WITH TH
6、REE-STATE OUTPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 87-12-08 REVISION LEVEL G SIZE A CAGE CODE 67268 5962-87694 SHEET 1 OF 19 DSCC FORM 2233 APR 97 5962-E419-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZ
7、E A 5962-87694 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case
8、 outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 F 87694 01 X A
9、Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Case outline (see 1.2.4) Lead finish (see 1.2.5) / / Drawing number For device class V: 5962 F 87694 01 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Ca
10、se outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appe
11、ndix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54AC374 Octal D-type flip-flop with three-state out
12、puts 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN
13、 and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Pr
14、ovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87694 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated
15、in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line S GDFP2-F20 or CDFP3-F20 20 Flat pack X See figure 1 20 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in M
16、IL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc Clamp
17、 diode current (IIK, IOK) . 20 mA DC output current (per output pin) . 50 mA DC VCCor GND current (per output pin) 25 mA 4/ Maximum power dissipation (PD) . 500 mW Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +260C Thermal resistance, junction-to-case (JC
18、) . See MIL-STD-1835 Junction temperature (TJ) +175C 5/ 1.4 Recommended operating conditions. 2/ 3/ 6/ Supply voltage range (VCC) +2.0 V dc to +6.0 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT). +0.0 V dc to VCCCase operating temperature range (TC) . -55C to +125C Input
19、rise or fall time rate (t/V): VCC= 3.6 V to 5.5 V . 0 to 8 ns/V 1.5 Radiation features. Device type 01: Maximum total dose available (dose rate = 50 300 rads (Si)/s) . 300 krads (Si) Single event phenomenon (SEP): effective LET, no SEL (see 4.4.4.2) 93 MeV-cm2/mg 7/ effective LET, no SEU (see 4.4.4.
20、2) . 93 MeV-cm2/mg 7/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters speci
21、fied herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ For devices with multiple VCCor GND pins, this value represents the total VCCor GND current. 5/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in scre
22、ening conditions in accordance with method 5004 of MIL-STD-883. 6/ Operation from 2.0 V dc to 3.0 V dc is provided for compatibility with data retention and battery back-up systems. Data retention implies no input transition and no stored data loss with the following conditions: VIH 70% VCC, VIL 30%
23、 VCC, VOH 70% VCC -20A, VOL 30% VCC 20 A. 7/ These limits were obtained during technology characterization and qualification, and are guaranteed by design or process, but not production tested unless specified in the customer through the purchase order or contract. Provided by IHSNot for ResaleNo re
24、production or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87694 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following
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