DLA SMD-5962-87667 REV C-1993 MICROCIRCUIT HIGH PERFORMANCE CMOS BUS BUFFERS MONOLITHIC SILICON《硅单块 高性能互补金属氧化物半导体总线缓冲器 微型电路》.pdf

《DLA SMD-5962-87667 REV C-1993 MICROCIRCUIT HIGH PERFORMANCE CMOS BUS BUFFERS MONOLITHIC SILICON《硅单块 高性能互补金属氧化物半导体总线缓冲器 微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-87667 REV C-1993 MICROCIRCUIT HIGH PERFORMANCE CMOS BUS BUFFERS MONOLITHIC SILICON《硅单块 高性能互补金属氧化物半导体总线缓冲器 微型电路》.pdf（14页珍藏版）》请在麦多课文档分享上搜索。

1、NOTICE OF REVISION (NOR) (See MIL-STO-480 for instructions) This revision described below has been authorized for the document listed. Defense Electronics Supply Center Dayton, Ohio 45444-5277 TE (ml Form Approved On6 NO. 0704-0188 93/ 03/19 I. ORIGIWATOR IUIE ANI IIWRESS 2. CAGE COOE 3. mw. 9. COWF

2、IGUUTION IlH (OR SVSrm) TO WHICH ECP APPLIES ALL 10. DESCRIPTION OF REVISION Sheet 1: Revisions ltr column: add “C“ Revisions description column: add “Changes in accordance with Revisions date column: add “93-03-19“. Revision level block: add “C“. Revision status of sheet: for sheets 1,5, add “C“. T

3、able I, Change from: Propagation delay output disable (q) to YI. NOR 5962-R099-93“. Sheet 5: to: Propagation delay output enable (v to YI. to YI“ for synbols tpHZ. tpLZ. Also add test condition statement “Propagation delay output disable (oz) Revision level block; add “C“. 67268 4. CAGECOOE 11. a. C

4、HECK ONE XIEXISTING DOCUMENT SUPPLEMENTED THIS SECTION FOR GOVERNENT USE ONLY I REVISED WCUMENT MUST BE CUSTODIAN OF MASTER WCUMENT BY THIS NOR MAY BE USED IN RECEIVED BEFORE MANUFACTURER SHALL HAKE ABOVE REVISION AND MANUFACTURE. MAY INCORPORATE THIS CHANGE. FURNISH REVISED WCUMENT TO: I I 5962-R09

5、9-93 5. DocuENTmi. b. ACTIVITY AUTHORIZED TO APPROVE SIGNATURE AND TITLE I Monica L. Poelking CHANGE FOR GOVERNMENT 6. TITLE OF WCuEi MICROCIRCUIT. HIM PERFORMWCE CMOS BUS BUFFERS, IOIIOLITHIC SILICOW. DATE (YYEIEM) I 93/03/19 67268 5w-87667 7. RNISIOII LETTER (Current) B (New) C 8. ECP mi. - DESC-E

6、CC CHIEF MI CROELECTRON ICs BRANCH 12. ACTIVITY ACCa9LISHING REVISICM ESC-ECC REVISION COMPLETED (Signature) DATE (YYMM) Jeffery Tunstall 93/03/19 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DATE (YR-MO-DA) LTR DESCRIPTION A Change absolute maxim

7、um rating of . 88-09-27 Change figure 4. Editorial changes throughout. B Add device types 05 and 06. Changes to 92-11-13 table I. Editorial changes throughout. THE ORIGINAL FRONT PAGE OF THIS DRAWING WS BEEN REPLACED APPROVED M.A. Frye M. L. Poelking REV III CHECKED BY D.A. DiCenzo APPROVED BY Rober

8、t P. Evans DRAWING APPROVAL DATE 87-09-16 REVISION LEVEL B SHEET REV DAYTON, OHIO 45444 MICROCIRCUIT, HIGH PERFORMANCE CMOS BUS BUFFERS, MONOLITHIC SILICON SIZE CAGE CODE 5962-87667 A 67268 SHEET 1 OF 12 SHEET REV STATUS OF SHEETS PMIC NIA STANDARD1 Z ED MILITARY DRAWING THIS DRAWING IS AVAILABLE FO

9、R USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A )ESC FORM 193 JUL 91 DISTRIBUTION STATEMENT A. PREPARED BY Ray Monnin I DEFENSE ELECTRONICS SUPPLY CENTER 5962-EWI-93 4pproved for public release; distribution is unlimited. Provided by IHSNot for ResaleNo reproduction or ne

10、tworking permitted without license from IHS-,-,-1. SCOPE STANDARDIZED MILITARY DRAWING DEFENSB ELECTRONICS SUPPLY CBHTER DAYTON, OHIO 45444 1.1 Scope. 1.2 Part or Identifying Number (PIN). The complete PIN shell be as shown in the following exanple: This drawing describes device requirements for cla

11、ss 6 microcircuits in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with conpliant non-JAN devices“. SIzg 5962-87667 A REVISION LEVEL SIEZT 5962-87667 o1 L - I l I I I Case outline Device type (see 1.2.1) (see 1.2.2) Drawing number X I I Lead finish (see

12、 1.2.3) 1.2.1 Device tme(s). The device typds) shall identify the circuit function as follows: Device type Generic number Circuit function o1 02 o3 o4 05 O6 29C827 291828 29C927 291928 29C827A 29C82A High performance CWS noninverting bus buffer High performance CMOS inverting bus buffer High perform

13、ance CROS noninverting bus buffer (rotated die) i/ High performce CMOS inverting bus buffer rotated die) i/ High performance CHOS noninverting bus buffer High performance CMOS inverting bus buffer 1.2.2 Case outline($). The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outli

14、ne letter Descriptive designator L GDIP3-T24 or CDIP4-T24 K GDFP2424 or CDFP3-F24 3 CQCCI-N28 1.3 Absolute maximum ratings. Supply voltage range - - - - - - - - - - - - - - - Input voltage range - - - - - - - - - - - - - - - - Storage temperature range - - - - - - - - - - - - - Maximum power dissipa

15、tion (PD) z/ - - - - - - - - DC output voltage range - - - - - - - - - - - - - - DC output diode current: Into output - - - - - - - DC output diode current: Out of output - - - - - - DC input diode current: Into input - - - - - - - - DC input diode current: Out of input - - - - - - - DC output curre

16、nt in accordance uith PON (isink): DC output current in acmrdance with PDN (Isourc,): DC output current in accordance with PDN (Isink): Device types O5 and O6 - - - - - - - - - - - - - DC output current in accordance with PDN (Isource): Device types 05 and O6 - - - - - - - - - - - - - Total dc groun

17、d current - - - - - - - - - - - - - - Total dc Vcc current - - - - - - - - - - - - - - - Lead temperature (soldering, 10 seconds) - - - - - - Thermal resistance, junction-to-case (OJc): Junction temperature (TJ) Device types M-04 Device types 01-04 - - - - - - - - - - - -_ - - - - - - - - - - - - -

18、- - Cases K, L, and 3 - - - - - - - - - - - - - - - - - - - - - - - - - - - i/ Not avai lable from an approved source of supply. I/ For TA = +100“C to +125“C, derate linearly at 10 mU/“C. i/ n = number of outputs, m = number of inputs. Terminals Package style 24 24 28 Dual-in-line Flat pack Leadless

19、 chip carrier 6.5 V dc to t7.0 V dc -0.5 V dc to 4-6.0 V dc -65OC to *150C 5w lnu -0.5 V dc to t6.0 V dc +50 mA -50 d t20 mA -20 WA 148 nA (2XIOL) -30 BA (2xIOH +loo RA -lw niA See HIL-STD-1835 150c DESC FORM 193A m 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without lice

20、nse from IHS-,-,-SMD-5962-87bb7 REV C b 0044273 891 STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 1.4 Recommended operating conditions. Supply voltage (V c!- - - - - - - - - - - - - - - - Minimum high levef input voltage (VI 1- - - - - - - Maximum low level input

21、 voltage (V 3 - - - - - - - +4.5 V dc to t5.5 V dc 2.0 V dc 0.8 V dc -55OC to +125uc Case operating temperature range Ac) - - - - - - - 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and bulletin. Unless otherwise Specified, the following specification, standards, and bulletin of t

22、he issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a psrt of this drawing to the extent specified herein. SPECIFICATION MILITARY MIL-M-38510 - Microcircuits, General Specification for. STANDARDS SIZE 5962-87667 A REVIS

23、ION LEVEL SHEET B 3 MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. MIL-STD-1835 - Microcircuit Case Outlines. BULLETIN MILITARY MI L-BUL-1 O3 - List of Standardized Military Drawings (SMDs). (Copies of the specification, standards, and bulletin required by manufacturers in

24、connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take prece

25、dence. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices“ and as specified herein. 3.2 Design, construction, and physical dimensions. The desig

26、n, construction, and physical dimensions shall be as specified in MIL-M-38510 and herein. 3.2.1 Case outline(s). The case outlineW shall be in accordance with 1.2.2 herein. 3.2.2 3.2.3 3.2.4 3.3 Electrical performance characteristics. Terminal connections. Truth tables. Logic diaqrams. The terminal

27、connections shall be as specified on figure 1. The truth tables shall be as specified on figure 2. The logic diagrams shall be as specified on figure 3. Unless otherwise specified herein, the electrical performance cnaracteristics are as specified in table I and shall apply over the full case operat

28、ing temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table 1. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-S

29、flD-5962-87bb7 REV C 9999996 0044274 728 I TABLE 1. E lectri Ca 1 perf ormance chnracterist i cs. I I I I I i I f symbol Test I Conditions I -55C 5 TC 1. +12SaC I Group A 4.5 v 5 vcc 5 5.5 v I subgroups Unless otherwise specified I STANDARDIZED HILITARY DRAWING DEFRSE ELXCTRONICS SUPPLY CENTl i= :s

30、r HIGH I I I 1 Parameter I s position1 i tpHL i i I I I J I L Switch position for paraneter test i ng Prqgation delay FIGURE 4. Switching circuits and waveforms. i DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-87bb7 R

31、EV C m 9999996 0044281 968 m STANDARDIZED SIZE MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL B 3.5 Marking. Marking shall be in accordance with MIL-STD-883 (see 3.1 herein). The part shall be marked with the PIN listed in 1.2 herein. herein). In addition, the

32、 manufacturers PIN may also be marked as listed in MIL-BUL-103 (see 6.6 3.6 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be lhe certificate of compliance submitted to listed as an approved source of supply in MIL-BUL-103 (see 6.6 herein). D

33、ESC-EC prior to listing as an approved source of supply shall affirm that the manufacturers product meets the requirements of MIL-STD-883 (see 3.1 herein) and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as required in MIL-STD-883 (see 3.1 herein) shall be pr

34、ovided with each.lot of microcircuits delivered to this drawing. 3.8 Notification of change. Notification of change to DESC-EC shall be required in accordance with MIL-STD-883 (see 3.1 herein). 3.9 Verification and review. DESC, DESCs agent, and the acquiring activity retain the option to review the

35、 manufacturers facility and applicable required documentation. at the option of the reviewer. Offshore documentation shall be made available onshore 4. QUALITY ASSURANCE PROVISIONS 4.1 Samplinci and inspection. Sampling and inspection procedures shall be in accordance with section 4 of MIL-M-38510 t

36、o the extent specified in MIL-STD-883 (see 3.1 herein). 4.2 Screening. Screening shall be in accordance with method 5004 of HIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. The following additional criteria shall apply: a. Burn-in test, method 1015 of NIL-S

37、TD-883. (1) Test condition A, C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as

38、applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883. (2) TA = +125C, minimum. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical parameter tests prior to burn-in are optional at the discretion of the man

39、ufacturer. b. 5962-87667 SHEET 11 TABLE II. Electrical test requirements. I l l I Subgroups I l I I I I MIL-STD-883 test requirements I I (in accordance with I I method 5005, table I) I i i Interim electrical parameters i - 1 (method 5G4) I I I Final electrical test parameters I 1*,2,3,7*,8, I I (me

40、thod 5004) I 9,10,11 I I I I Group A test requirements I 1 A3, 4/7, 8, I I (method 5005) I 9,10,11 I t I I Groups C and D end-point I I I electrical parameters I 1, 2, 3 I 1 (method 5005) I I I * PDA applies to subgroup 1 and 7. Provided by IHSNot for ResaleNo reproduction or networking permitted wi

41、thout license from IHS-,-,-SMD-5962-87667 REV C 9999996 0044282 BTY m STADARDIZED MiLITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER MYTOPI, OHIO 45444 4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with method 5005 of MIL-STD-883 including groups A, 6, C,

42、and D inspections. The following additional criteria shall appLy. 4.3.1 Group A inspection. a. b. c. Tests shall be as specified in table II herein. Subgroups 5 and 6 in table I, method 5005 of MIL-STD-883 shall be omitted. Subgroup 4 (GIN and CwT measurement) shall be measured only for the initial

43、test and after process or design changes which may affect input capacitance. Subgroups 7 and 8 shall include verification of the truth table. d. 1.3.2 Groups C and D inspections. a. b. End-point electrical parameters shall be as specified in table II herein. Steady-state life test conditions, method

44、 1005 of MIL-STD-883. (1) Test condition A, C or D. The test circuit shall be maintained by the sanufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and pouer di

45、ssipation, as applicable, in accordance with the intent specified in test method 1005 of MIL-STD-883. (2) TA +125C, minitnum. (3) Test duration: 1,OOO hours, except as permitted by method 1005 of MIL-STD-883. 5. PACKAGING 5.1 Packaqina requirements. 6. NOTES 6.1 The requirements for packaging shall

46、be in accordance with MIL-M-38510. Intended use. Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for original equipment manufacturer application. When a mi

47、litary specification exists and the product covered by this drawing has been qualified for listing on QPL-38510, the device specified herein will be inactivated and will not be used for new design. The QPL-38510 product shall be the preferred item for all applications. 6.2 Replaceability. Microcircu

48、its covered by this drawing will replace the same generic device covered by a contractor-prepared specification or drawing. 6.3 Confiauration control of SMDS. All proposed changes to existing SMS will be coordinated with the users of record for the individual documents. DD Form 1693, Engineering Cha

49、nge Propoaal (Short Form). application requires configuration control and the applicable SHD. will be used for coordination and distribution of changes to the drawings. microelectronics devices (FSC 5962) should contact DESC-EC, telephone (513) 296-6047. This coordination will be accomplished in accordance with MIL-STD-481 using 6.4 Record of users. Hilitary and industrial users shall inform Defense Electronics Supply Center