DLA SMD-5962-87554 REV F-2011 MICROCIRCUIT DIGITAL CMOS 1-OF-8 DECODER DEMULTIPLEXER TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf
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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change to one part - one part number format. Add device type 02. Add vendor CAGE 01295 for device type 02. Add characterization for device classes B, S, Q, and V. Add ground bounce and latch-up changes to table I. Editorial changes throughout 93-
2、01-15 Monica L. Poelking B Change the power dissipation capacitance parameters in table I. 93-04-14 Monica L. Poelking C Technical and editorial changes throughout. Add RHA requirements. - CS 97-11-05 Monica L. Poelking D Add device type 03. Add vendor CAGE F8859. Add case outline X. Add radiation f
3、eatures for device type 01. Update boilerplate to MIL-PRF-38535 requirements. - jak 02-07-03 Thomas M. Hess E Add radiation features for device type 03 in section 1.5. Update the boilerplate to include radiation hardness assured requirements for device type 03. Editorial changes throughout. - jak 04
4、-05-05 Thomas M. Hess F Update radiation features in section 1.5, Add SEP test table IB and paragraph 4.4.4.2. jak 11-04-14 David J.Corbett REV SHET REV F F F F F F F F F F SHEET 15 16 17 18 19 20 21 22 23 24 REV STATUS REV F F F F F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14
5、 PMIC N/A PREPARED BY Jeffery Tunstall DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY D. A. DiCenzo THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY N. A. Hauck MICROCIRCUIT, DIGITAL, CMOS, 1-OF-8 DECODER/DEMULTIPLEXER,
6、 TTL AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 87-05-26 COMPATIBLE INPUTS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL F SIZE A CAGE CODE 67268 5962-87554 SHEET 1 OF 24 DSCC FORM 2233 APR 97 5962-E015-11 Provided by IHSNot for ResaleNo reproduction or networking permitted withou
7、t license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87554 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes B, Q and
8、M), and space application (device classes S and V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the
9、following example: 5962 F 87554 01 M X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes B, S, Q, and V RHA marked devices meet
10、the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The de
11、vice type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ACT138 1-of-8 decoder/demultiplexer,TTL compatible inputs 02 54ACT11138 1-of-8 decoder/demultiplexer, TTL compatible inputs 03 54ACT138 1-of-8 decoder/demultiplexer,TTL compatible inputs 1.2.3 Dev
12、ice class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MI
13、L-PRF-38535, appendix A B, S, Q, or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line F GDFP2-F16 or CD
14、FP3-F16 16 Flat pack X CDFP4-F16 16 Flat pack 2 CQCC1-N20 20 Leadless-chip-carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes B, S, Q, and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitt
15、ed without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87554 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ Supply voltage range (VCC) -0.5 V dc to +6.0 V dc DC input voltage (VIN) -0.5 V dc to VCC
16、+ 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input diode current (IIK) (0.0V VIN, VIN VCC) 20 mA DC output diode current (IOK) (0.0V VOUT, VOUT VCC) 20 mA DC output current (IOUT) (per output) 50 mA DC VCCor GND current (ICC, IGND) (per pin) . 200 mA 3/ Storage temperatu
17、re range (TSTG) . -65C to +150C Maximum power dissipation (PD) . 500 mW Lead temperature (soldering, 10 seconds): Case outline X +260C All other case outlines except case X . +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ). +175C Case operating temperatur
18、e (TC) . -55C to +125C 1.4 Recommended operating conditions. 2/ 4/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT) . +0.0 V dc to VCCMaximum low level input voltage (VIL) 0.8 V Minimum high level input voltage (VIH) . 2.0 V Case
19、 operating temperature range (TC) . -55C to +125C Input rise and fall rate (trand tf) maximum: VCC= 4.5 V 10 ns/V VCC= 5.5 V 8 ns/V Maximum high level output current (IOH) -24 mA Maximum low level output current (IOL) 24 mA 1.5 Radiation features. Device type 01: Maximum total dose available (dose r
20、ate = 50 300 rads (Si)/s) . 100 krads (Si) Single event phenomenon (SEP): effective LET, no SEL (see 4.4.4.2) . 100 MeV-cm2/mg effective LET, no SEU (see 4.4.4.2) 100 MeV-cm2/mg Device type 03: Maximum total dose available (dose rate = 50 300 rads(Si)/s) 300 krads (Si) Single event phenomenon (SEP):
21、 effective LET, no SEL (see 4.4.4.2) . 93 MeV-cm2/mg 5/ effective LET, no SEU (see 4.4.4.2) . 93 MeV-cm2/mg 5/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. The maximum
22、junction temperature may be exceeded for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ For packages with multiple VCCand GND pins, this value represents the maximum total current
23、flowing into or out of all VCCor GND pins. 4/ Unless otherwise specified, the values listed above shall apply over the full VCCand TCrecommended operating range. 5/ These limits were obtained during technology characterization and qualification, and are guaranteed by design or process, but not produ
24、ction tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87554 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHE
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