DLA SMD-5962-87550 REV H-2012 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED OCTAL BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf
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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R083-93. wlm 93-03-01 Monica L. Poelking B Changes in accordance with NOR 5962-R096-98. jak 98-04-24 Monica L. Poelking C Add vendor CAGE F8859. Add device class V criteria. Add delta limits, table III. Add cas
2、e outline X. Update the latest MIL-PRF-38535 requirements. ltg 01-02-06 Raymond Monnin D Add case outline Z. jak 01-07-23 Thomas M. Hess E Add radiation features, section 1.5. Add radiation criteria in table I. Change case outline X lead temperature in section 1.3. Update boilerplate to include radi
3、ation hardness assured requirements. jak 05-08-16 Thomas M. Hess F Update radiation features in section 1.5. Add SEP test table IB and paragraph 4.4.4.2. jak. 11-07-19 Thomas M. Hess G Add dual in line package for RAD HARD devices. - MAA. 11-09-20 Thomas M. Hess H Update dimensions of case outline X
4、 to figure 1. - LTG 12-06-22 Thomas M. Hess CURRENT CAGE CODE IS 67268 REV SHEET REV H H H SHEET 15 16 17 REV STATUS REV H H H H H H H H H H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Greg A. Pitz DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmar
5、itime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Daniel A. DiCenzo APPROVED BY D. R. Cool MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, OCTAL BUFFER/LINE DRIVER WITH THREE-STATE
6、OUTPUTS, MONOLITHIC SILICON DRAWING APPROVAL DATE 87-05-07 REVISION LEVEL H SIZE A CAGE CODE 14933 5962-87550 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E372-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND
7、MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-87550 REVISION LEVEL H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines
8、and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - 87550 01 R A Federal st
9、ock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Case outline (see 1.2.4) Lead finish (see 1.2.5) / / Drawing number For device class V: 5962 F 87550 01 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline
10、 (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A spe
11、cified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54AC240 Octal buffer/line driver with three-state inverted ou
12、tputs 02 54AC11240 Octal buffer/line driver with three-state inverted outputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this dr
13、awing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-385
14、35, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-87550 REVISION LEVEL H SHEET 3 DSCC FORM
15、2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style J GDIP1-T24 or CDIP2-T24 24 Dual-in-line K GDFP2-F24 or CDFP3-F24 24 Flat pack R GDIP1-T20 or CDIP2-T20 20 Dual-in-line S GDFP2-F20 o
16、r CDFP3-F20 20 Flat pack X See figure 1 20 Flat pack Z GDFP1-G20 20 Flat pack with gullwing 2 CQCC1-N20 20 Square leadless chip carrier 3 CQCC1-N28 28 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendi
17、x A for device class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc Clamp diode current (IIK, IOK) . 20 mA DC output current (per pin) (IO
18、UT) . 50 mA DC VCCor GND current (per pin) (ICC, IGND) . 50 mA Storage temperature range (TSTG) . -65C to +150C Maximum power dissipation (PD) 500 mW Lead temperature (soldering, 10 seconds): Case outline X . +260C All other case outlines except case X +245C Thermal resistance, junction-to-case (JC)
19、 . See MIL-STD-1835 Junction temperature (TJ) . +175C 4/ 1.4 Recommended operating conditions. 2/ 3/ 5/ Supply voltage range (VCC) +2.0 V dc to +6.0 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT). +0.0 V dc to VCCCase operating temperature range (TC) . -55C to +125C Input
20、 rise or fall times: VCC= 3.6 V . 0 to 8 ns/V VCC= 5.5 V . 0 to 8 ns/V 1.5 Radiation features. Device type 01: Maximum total dose available (dose rate = 50 300 rads (Si)/s) 300 krads (Si) Single event phenomenon (SEP): effective LET, no SEL (see 4.4.4.2) 93 MeV-cm2/mg 6/ effective LET, no SEU (see 4
21、.4.4.2) 93 MeV-cm2/mg 6/ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters sp
22、ecified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 5/ Operation from 2.0 V dc to
23、 3.0 V dc is provided for compatibility with data retention and battery back-up systems. Data retention implies no input transition and no stored data loss with the following conditions: VIH 70% of VCC, VIL 30% of VCC, VOH 70% of VCC -20A, VOL 30% of VCC 20 A. 6/ These limits were obtained during te
24、chnology characterization and qualification, and are guaranteed by design or process, but not production tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIR
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