DLA SMD-5962-87531 REV D-2006 MICROCIRCUITS MEMORY DIGITAL CMOS PARALLEL 512 X 9 FIFO MONOLITHIC SILICON《硅单块 平行512 X9先进先出 互补金属氧化物半导体 数字主储存器微型电路》.pdf

《DLA SMD-5962-87531 REV D-2006 MICROCIRCUITS MEMORY DIGITAL CMOS PARALLEL 512 X 9 FIFO MONOLITHIC SILICON《硅单块 平行512 X9先进先出 互补金属氧化物半导体 数字主储存器微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-87531 REV D-2006 MICROCIRCUITS MEMORY DIGITAL CMOS PARALLEL 512 X 9 FIFO MONOLITHIC SILICON《硅单块 平行512 X9先进先出 互补金属氧化物半导体 数字主储存器微型电路》.pdf（17页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE APPROVED A Removed vendor CAGE 61772 as source of supply for case outline letter Z, the F-11A package. Added case outline letters U and T, F-11 and D-15 to the drawing. Editorial changes throughout. 90-10-04 M. A. Frye B Changes in accordance with NOR 5962-R042-95. 94

2、-12-15 M. A. Frye C Updated boilerplate to reflect current requirements. Corrections to pages 4, 5, 8 and timing waveforms. - glg 01-01-17 Raymond Monnin D Boilerplate update, part of 5 year review. ksr 06-08-18 Raymond Monnin THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV

3、D D SHEET 15 16 REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice STANDARD MICROCIRCUIT DRAWING CHECKED BY Ray Monnin DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE

4、FOR USE BY All DEPARTMENTS APPROVED BY Michael. A. Frye AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 23 May 1988 MICROCIRCUITS, MEMORY, DIGITAL, CMOS, PARALLEL 512 X 9 FIFO, MONOLITHIC SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-87531 SHEET 1 OF 16 DSCC FORM 2233

5、 APR 97 5962-E585-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87531 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This draw

6、ing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN shall be as shown in the following example: 5962-87531 01 X X | | | | | | | | | | | | Drawing number D

7、evice type Case outline Lead finish (see 1.2.1) (see 1.2.2) (see 1.2.3) 1.2.1 Device type(s). The device type(s) shall identify the circuit function as follows: Device type Generic number Circuit Access time 01 7201 512 X 9-bit parallel FIFO 30 ns 02 7201 512 X 9-bit parallel FIFO 50 ns 03 7201 512

8、X 9-bit parallel FIFO 80 ns 1.2.2 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835, and as follows: Outline letter Descriptive designator Terminals Package style X GDIP1-T28 or CDIP2-T28 28 dual-in-line package Y CQCC1-N32 32 rectangular chip carrier Z CDFP3-F28 28 flat pa

9、ckage U GDFP2-F28 28 flat package T GDIP4-T28 or CDIP3-T28 28 dual-in-line package 1.2.3 Lead finish. The lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. 1/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC output current (IOUT). 50 mA Ambient storage tempe

10、rature -65C to +150C Temperature under bias . -55C to +125C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Maximum power dissipation (PD):. 1.0 W 2/ 1.4 Recommended operating conditions. 1/ Supply voltage range (VCC). +4.5 V dc to +5.5 V dc Ground voltage (VSS) 0 V dc Minimum high level

11、input voltage (VIH) . 2.0 V dc Maximum low level input voltage (VIL) . 0.8 V dc Case operating temperature range (TC) -55C to +125C Rise time 5 ns Fall time 5 ns 1/ All voltages referenced to VSS. 2/ Must withstand the added PDdue to short circuit test; e.g., IOS. Provided by IHSNot for ResaleNo rep

12、roduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87531 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The f

13、ollowing specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturi

14、ng, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microc

15、ircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict

16、between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements The individual item requirem

17、ents shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional cert

18、ification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program plan and qualifying activity approval in accordance with MIL-PRF-38535. This QML flow as documented in the Quality Management (QM) plan may make modifications to the requirements herein.

19、These modifications shall not affect the PIN as described herein. A “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 is required to identify when the QML flow option is used. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be

20、 as specified in MIL-PRF-38535, appendix A and herein. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4

21、Die overcoat. Polyimide and silicone coatings are allowable as an overcoat on the die for alpha particle protection provided that each coated microcircuit inspection lot (see MIL-PRF-38535, appendix A) shall be subjected to and pass the Internal Water-Vapor Content test (test method 1018 of MIL-STD-

22、883). The frequency of the internal water vapor testing may not be decreased unless approved by the preparing activity. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in table I and shall apply over the full

23、case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are described in table I. 3.5 Marking. Marking shall be in accordance with MIL-PRF-38535, appendix A. The part sha

24、ll be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. Provided by IHSNot for ResaleNo repr

25、oduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87531 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 3.5.1 Certification/compliance mark. A compliance indicator “C” shall be marked on all

26、 non-JAN devices built in compliance to MIL-PRF-38535, appendix A. The compliance indicator “C” shall be replaced with a “Q“ or “QML“ certification mark in accordance with MIL-PRF-38535 to identify when the QML flow option is used. 3.6 Certificate of compliance. A certificate of compliance shall be

27、required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply shall affirm that the manufacturers product meets the requirements of MIL-PRF-38535

28、, appendix A and the requirements herein. 3.7 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change. Notification of change to DSCC-VA shall be required

29、for any change that affects this drawing. 3.9 Verification and review. DSCC, DSCCs agent and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 4. V

30、ERIFICATION 4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. Screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. The follo

31、wing additional criteria shall apply: a. Burn-in test (method 1015 of MIL-STD-883). (1) Test condition C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or procuring activity upon request. The test circ

32、uit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein, except interim electrical para

33、meter tests prior to burn-in are optional at the discretion of the manufacturer. 4.3 Quality conformance inspection. Quality conformance inspection shall be in accordance with method 5005 of MIL-STD-883 including groups A, B, C, and D inspections. The following additional criteria shall apply. 4.3.1

34、 Group A inspection. a. Tests shall be as specified in table II herein. b. Subgroups 5 and 6 in table I, method 5005 of MIL-STD-883 shall be omitted. c. Subgroup 4 (CINand COUT measurement) shall be measured only for the initial test and after any design or process changes which may affect capacitan

35、ce. Sample size is 15 devices with no failures, and all input and output terminals tested. d. Subgroups 7 and 8 tests shall include verification of the truth table. 4.3.2 Groups C and D inspections. a. End-point electrical parameters shall be as specified in table II herein. b. Steady-state life tes

36、t conditions, method 1005 of MIL-STD-883. (1) Test condition C or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or procuring activity upon request. The test circuit shall specify the inputs, outputs, bia

37、ses, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. (2) TA= +125C, minimum. (3) Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permitted without li

38、cense from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-87531 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. | | Conditions | | | | Test |Symbol | -55C VIH|1, 2, 3 | All | -10 | 10 | A | |

39、| | | | | | | VCC= 4.5 V, IOL= 8.0 mA | | | | | Output low voltage |VOL| VIL= 0.8 V, VIH= 2.2 V |1, 2, 3 | All | | 0.4 | V | | | | | | | | VCC= 4.5 V, IOH= -2.0 mA | | | | | Output high voltage |VOH| VIL= 0.8 V, VIH= 2.2 V |1, 2, 3 | All | 2.4 | | V | | | | | | | | | | | | | | Operating supply |ICC1

40、| f = maximum, outputs open, |1, 2, 3 | All | | 100 | mA current | | VCC= maximum | | | | | | | | | | | | | | | | | | | Standby power supply |ICC2| R = W = RS = FL/RT = VIH, |1, 2, 3 | All | | 15 | mA current | | outputs open | | | | | | | | | | | | | | | | | | Power down current |ICC3| All inputs =

41、 VCC- 0.2 V, |1, 2, 3 | All | | 900 | A | | outputs open | | | | | | | | | | | | | | | | | | | Input capacitance 1/ |CI | VI= 5.0 V or GND, f = 1 MHz | 4 | All | | 5 | pF | | TC= +25C, See 4.3.1c | | | | | | | | | | | | | | | | | | | Output capacitance 1/ |CO| VO= 5.0 V or GND, f = 1 MHz | 4 | All |

42、 | 7 | pF | | TC= +25C, See 4.3.1c | | | | | | | | | | | | | | | | | | | Functional tests | | See 4.3.1d. |7, 8A, 8B | All | | | | | | | | | See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING

43、SIZE A 5962-87531 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. | | Conditions 2/ 3/ | | | | Test |Symbol | -55C TC +125C |Group A |Device | Limits | Unit | | VSS= 0 V |subgroups |

44、types | | | | | 4.5 V VCC 5.5 V | | | | | | | unless otherwise specified | | | Min | Max | | | | | 01 | 40 | | Read cycle time |tRC| |9, 10, 11 | 02 | 65 | | ns | | | 03 | 100 | | | | | | 01 | | 30 | Access time |tA| |9, 10, 11 | 02 | | 50 | ns | | | | 03 | | 80 | | | | | 01 | 10 | | Read recovery t

45、ime |tRR| |9, 10, 11 | 02 | 15 | | ns | | | 03 | 20 | | | | | | 01 | 30 | | Read pulse width |tRPW| |9, 10, 11 | 02 | 50 | | ns | | | | 03 | 80 | | | | | | | | | Read pulse low to data |tRLZ 4/ | |9, 10, 11 | All | 5 | | ns bus at low-Z | | | | | | | | | | | | | | Write pulse low to data |tWLZ 4/ |

46、|9, 10, 11 | All | 5 | | ns bus at low-Z | | | | | | | | | | | | | | Data valid from read |tDV| |9, 10, 11 | All | 5 | | ns pulse high | | | | | | | | | | | | | | Read pulse high to data |tRHZ 4/ | |9, 10, 11 | 01 | | 20 | ns bus at high-Z | | | | 02,03 | | 30 | | | | | 01 | 40 | | Write cycle time

47、|tWC| |9, 10, 11 | 02 | 65 | | ns | | | | 03 | 100 | | | | | | 01 | 30 | | Write pulse width |tWPW| |9, 10, 11 | 02 | 50 | | ns | | | 03 | 80 | | | | | | 01 | 10 | | Write recovery time |tWR| |9, 10, 11 | 02 | 15 | | ns | | | | 03 | 20 | | | | | | 01 | 18 | | Data setup time |tDS| |9, 10, 11 | 02 | 30 | | ns | | | 03 | 40 | | | | | | 01 | 0 | | Data hold time |tDH| |9, 10, 11 | 02 | 5 | | ns | | | | 03 | 10 | | | | | | 01 | 40 | | Reset cycle time |tRSC| |9, 10, 11 | 02 | 65 | | ns | | | 03 | 100 | | | | | | 01 | 30 | | Reset pulse width |tRS| |9, 10, 11 | 02 | 50 | | ns | | | | 03 |