DLA SMD-5962-86877 REV E-2006 MICROCIRCUIT LINEAR PRECISION VOLTAGE COMPARATOR BUFFER MONOLITHIC SILICON《硅单块 精密电压比较器或缓冲器 直线式微型电路》.pdf

《DLA SMD-5962-86877 REV E-2006 MICROCIRCUIT LINEAR PRECISION VOLTAGE COMPARATOR BUFFER MONOLITHIC SILICON《硅单块 精密电压比较器或缓冲器 直线式微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-86877 REV E-2006 MICROCIRCUIT LINEAR PRECISION VOLTAGE COMPARATOR BUFFER MONOLITHIC SILICON《硅单块 精密电压比较器或缓冲器 直线式微型电路》.pdf（12页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add one vendor, CAGE 06665. Make changes to table I and throughout the drawing. Remove one vendor, CAGE 34333. 90-02-01 M. A. FRYE B Add device type 02. Add case outlines G and P. Table I changes. Add one vendor, CAGE 64155. Editorial changes thr

2、oughout. 94-08-09 M. A. FRYE C Make change to VOL1test as specified in table I. - ro 99-06-10 R. MONNIN D Add case outline Z and CAGE 27014. - ro 01-02-22 R. MONNIN E Drawing updated to reflect current requirements. - ro 06-01-10 R. MONNIN THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED.

3、REV SHET REV SHET REV STATUS REV E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY DONALD R. OSBORNE DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY D. A. DiCENZO COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR U

4、SE BY ALL DEPARTMENTS APPROVED BY N. A. HAUCK AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 87-07-15 MICROCIRCUIT, LINEAR, PRECISION VOLTAGE COMPARATOR / BUFFER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-86877 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-

5、E051-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86877 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents

6、 two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assu

7、rance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - 86877 01 G X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Case outline (see 1.2.4)Lead finish (see 1.2.5) / / Drawing number 5962

8、 - 86877 01 Q G X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified R

9、HA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the cir

10、cuit function as follows: Device type Generic number Circuit function 01 PM111, LM111 Precision voltage comparator / buffer 02 LT111A Precision voltage comparator / buffer 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed

11、below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentation M Vendor self-certification to the requirements

12、 for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A

13、5962-86877 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can P GDIP1-T8 or CDI

14、P2-T8 8 Dual-in-line Z GDFP1-G10 10 Flat pack with gull wing leads 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. Ground to negat

15、ive supply voltage . -30.0 V Total supply voltage (V+ to V-) . 36.0 V Output to negative supply voltage -50.0 V Input voltage . 15 V 1/ Differential input voltage . 30.0 V Output sink current . 50 mA Output short circuit duration . 10 seconds Maximum strobe current . 10 mA Power dissipation (PD) . 5

16、00 mW Storage temperature range -65C to +150C Junction temperature (TJ) +175C 2/ Lead temperature (soldering, 60 seconds) . +300C Thermal resistance, junction-to-case (JC): Cases G, P, and 2 See MIL-STD-1835 Case Z 24C/W 1.4 Recommended operating conditions. Supply voltage (VS) 15 V Ambient operatin

17、g temperature range (TA) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those

18、 cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Out

19、lines. _ 1/ Rating applies to VS= 15 V. The positive input voltage limit is 30 V above the negative supply. The negative input voltage limit is equal to the negative supply voltage or 30 V below the positive supply, whichever is less negative. 2/ For short term test (in the specific burn-in and life

20、 test configuration when required and up to 138 hours maximum) TJ= +275C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86877 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET

21、4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardiza

22、tion Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes appl

23、icable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Managemen

24、t (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction,

25、 and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2

26、Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in ta

27、ble I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN

28、listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designat

29、or shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as

30、required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requireme

31、nts of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved s

32、ource of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance a

33、s required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6

34、.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86877 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO

35、43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxInput offset voltage VIORS= 50 , 1 01 3.0 mV VIC= 0 V, 13 V , and 2,3 4.0

36、14.5 V 1 02 1.0 2,3 2.0 RS= 50 , VIC= 0 V, 1 01 3.0 VS= 2.5 V 2,3 4.0 1 02 1.0 2,3 2.0 Raised input offset 3/ voltage VIO(R)RS= 50 , 1 01 3.0 mV VIC= 0 V, 13 V, and 02 1.0 14.5 V, 2,3 01 4.5 VBAL= VBAL/STB= V+ 02 2.5 Input offset voltage temperature coefficient VIO/ T RS= 50 4/ 2,3 01,02 25 V/C Inpu

37、t offset current IIOVIC= 0 V, 13 V, and 1,2 01 10 nA -14.5 V 3 20 1,2 02 5 3 10 Raised input offset 3/ current IIO(R)VIC= 0 V, 1,2 01,02 25 nA VBAL= VBAL/STB= V+ 3 50 Input offset current temperature coefficient IIO/T +25C to +125C 4/ 1,2 01,02 100 pA/C +25C to -55C 4/ 1,3 200 See footnotes at end o

38、f table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86877 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance character

39、istics Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxInput bias current +IIBVIC= 0 V 1,2 All -100 +0.1 nA 3 -150 +0.1 VIC= 13 V and 14.5 V 1,2 -150 +0.1 3 -200 +0.1 -IIBVIC= 0 V 1,2 All -100 +0.1 3 -150 +0.1 VIC= 13

40、V and 14.5 V 1,2 -150 +0.1 3 -200 +0.1 Collector output voltage (STROBED) VO(STB)RS= 50 , ISTB= -3.0 mA 1,2,3 All 14 V Common mode rejection CMR RS= 50 , VIC= 13 V and 14.5 V 1,2,3 All 80 dB Output leakage current ICEXVS= 18 V, VIN= 5 mV, 1 All -1 10 nA VO= 32 V 2 -1 500 Input leakage current II1VS=

41、 18 V, VID= -29 V 1,2,3 All -5 500 nA II2VS= 18 V, VID= -29 V -5 500 Positive supply current I+ 1 All 6.0 mA 2 6.0 3 7.0 Negative supply current I- 1 All -5.0 mA 2 -5.0 3 -6.0 Output short circuit current IOS10 ms maximum test duration 1 All 0 200 mA 2 0 150 3 0 250 See footnotes at end of table. Pr

42、ovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86877 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Cont

43、inued. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxAdjustment for input offset voltage VIO(ADJ)+ RS= 50 , TA= +25C 1 All +5.0 mV VIO(ADJ)- -5.0 Low level output voltage VOL1V+ = 4.5 V, V- = 0 V, VIC= 0.71 V, IO= 8 mA, VID= -6

44、.0 mV 1,2,3 All 0 0.4 V VOL2V+ = 4.5 V, V- = 0 V, VIC= -1.75 V, IO= 8 mA, VID= -6.0 mV 0 0.4 Low level output voltage VOL3VS= 15 V, VID= -5.0 mV, VIC= 13 V, IO= 50 mA 1,2,3 All 0 1.5 V VOL4VS= 15 V, VID= -5.0 mV, VIC= -14 V, IO= 50 mA 0 1.5 Voltage gain (emitter output) +AVE RL= 600 4 All 10 V/mV 5,

45、6 8 Response time, low-to- high, collector output tRLHCVOD(overdrive)= -5 mA, CL= 50 pF(min), 7,8B All 0 300 ns VIN= 100 mV 8A 0 640 Response time, high-to- low collector output tRHLCVOD(overdrive)= +5 mA, CL= 50 pF(min), 7,8B All 0 300 ns VIN= 100 mV 8A 0 500 1/ Unless otherwise specified, VIC= 0 V

46、 and VS= 15 V. 2/ VICis achieved by algebraically subtracting the common mode voltage from each VS(power supplies) and algebraically adding it to VIN. VICcan be calculated by using the following formula: VIC= -(V+) + (V-) / 2 + VIN3/ Subscript (R) indicates tests which are performed with input stage

47、 current raised by connecting BAL and BAL/STB terminals to V+. 4/ If not tested, shall be guaranteed to the limits specified in table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-86877 DEFENSE SU

48、PPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 8 DSCC FORM 2234 APR 97 Device types 01 and 02 Case outlines G and P Z 2 Terminal number Terminal symbol 1 GROUND GND NC 2 IN+ IN+ EMIT OUT3 IN- IN- NC 4 V- NC NC 5 BALANCE V- IN+ 6 BAL / STRB BALANCE NC 7 OUT BAL / STRB IN- 8 V+ NC NC 9 - OUTPUT NC 10 - V+ V- 11 - - NC 12 - - BALANCE 13 - - NC 14 - - NC 15 - - BAL / STRB 16 - - NC 17 -