DLA SMD-5962-83025 REV H-2005 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED LOW-POWER SCHOTTKY TTL 4-BIT UP DOWN BINARY COUNTER MONOLITHIC SILICON《硅单片4比特二进增值 降值计数器 TTL肖脱基高级小功率双极数字微型电路》.pdf
《DLA SMD-5962-83025 REV H-2005 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED LOW-POWER SCHOTTKY TTL 4-BIT UP DOWN BINARY COUNTER MONOLITHIC SILICON《硅单片4比特二进增值 降值计数器 TTL肖脱基高级小功率双极数字微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-83025 REV H-2005 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED LOW-POWER SCHOTTKY TTL 4-BIT UP DOWN BINARY COUNTER MONOLITHIC SILICON《硅单片4比特二进增值 降值计数器 TTL肖脱基高级小功率双极数字微型电路》.pdf(19页珍藏版)》请在麦多课文档分享上搜索。
1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED C Convert to military drawing format. Case E inactive for new design. Change VIL, tPLH1, tPHL1, and tPLH2. Delete minimum limits from IILand propagation delays. 86-10-02 M. A. Frye D Delete fMAXand tpclock at +25C. Change fMAX(-55C and +125C). Chan
2、ge table I, IO(Q and RCO outputs) to IO(Q outputs) and (CCO outputs, all) to (CCO and RCO outputs, 02). In table I, device type 02, change propagation delay times. Figure 2, device type 01, change RCO:L to RCO:H (last two entries). Figure 2, device type 02. For Q outputs disabled and load, under U/D
3、 change the X to an H. Figure 3, change ACD to RCO . Delete footnote 2/ from table I. Editorial changes throughout. Case 2, device 01 is inactive for design. 87-06-10 M. A. Frye E Split VILinto temperatures. Add figure 5. Add footnotes to table I. Change propagation delays. Editorial changes through
4、out. Change in Table II. 88-05-16 M. A. Frye F Changes in accordance with NOR 5962-R083-92. Editorial changes throughout. -pn 92-07-06 Monica L. Poelking G Update to reflect latest changes in format and requirements. Editorial changes throughout. -les 02-07-31 Raymond Monnin H Update to reflect late
5、st changes in format and requirements. Correct paragraph in 3.5. Editorial changes throughout. les 05-07-21 Raymond Monnin THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED. CURRENT CAGE CODE 67268 REV SHET REV H H H H SHEET 15 16 17 18 REV STATUS REV H H H H H H H H H H H H H H OF SHEETS SH
6、EET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Monica L. Poelking DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Raymond Monnin COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROC
7、IRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW-POWER SCHOTTKY TTL, 4-BIT UP/DOWN AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 84-03-01 BINARY COUNTER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL H SIZE A CAGE CODE 14933 83025 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E395-05 Provided by IHS
8、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 83025 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing describes device requirements for MIL
9、-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A. 1.2 Part or Identifying Number (PIN). The complete PIN is as shown in the following example: 83025 01 E X Drawing number Device type (see 1.2.1) Case outline(see 1.2.2) Lead finish(see 1.2.3)1.2.1 D
10、evice type. The device type identify the circuit function as follows: Device type Generic number Circuit function 01 54ALS169 Synchronous 4-bit up/down binary counter 02 54ALS569 Synchronous 4-bit up/down binary counter with three-state outputs 1.2.2 Case outlines. The case outlines are as designate
11、d in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 dual-in-line F GDFP2-F16 or CDFP3-F16 16 flat R GDIP1-T20 or CDIP2-T20 20 dual-in-line S GDFP2-F20 or CDFP3-F20 20 flat 2 CQCC1-N20 20 square chip carrier 1.2.3 Lead finish. Th
12、e lead finish is as specified in MIL-PRF-38535, appendix A. 1.3 Absolute maximum ratings. Supply voltage . -0.5 V dc minimum to +7.0 V dc maximum Input voltage range -1.5 V dc at -18 mA to +7.0 V dc Storage temperature range -65C to +150C Maximum power dissipation (PD) 1/: Device type 01 . 137.5 mW
13、Device type 02 . 176 mW Lead temperature (soldering, 10 seconds) . +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C _ 1/ Maximum power dissipation is defined as VCCx ICC, and must withstand the added PDdue to short-circuit test; e.g., IO. Provided by
14、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 83025 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 1.4 Recommended operating conditions. Supply voltage range (VCC) .
15、 +4.5 V dc minimum to +5.5 V dc maximum Minimum high level input voltage (VIH) . 2.0 V dc Maximum low level input voltage (VIL) : VIL= +125C . 0.7 V dc VIL= +25C . 0.8 V dc VIL= -55C 0.8 V dc Case operating temperature range (TC) -55C to +125C Width of clock pulse (tpCLK) : Device type 01 20 ns mini
16、mum Device type 02 : CLK High . 20 ns minimum CLK Low . 23 ns minimum Width of asynchronous clear pulse (tpACLR ): Device type 02 20 ns minimum Setup times before clock (tsu): Data: Device type 01 20 ns minimum Device type 02 25 ns minimum Synchronous clear SCLR : Device type 02 (low) . 20 ns minimu
17、m Device type 02 (inactive) 35 ns minimum Asynchronous clear ( ACLR ): Device type 02 (inactive) . 10 ns minimum Synchronous LOAD : Device types 01, 02 (low) . 20 ns minimum Device type 02 (inactive) . 35 ns minimum ENP / ENT : Device types 01 and 02 (low) 25 ns minimum Device 01 (high) 25 ns minimu
18、m Device type 02 (high) . 35 ns minimum U/D : Device type 01 28 ns minimum Device type 02 35 ns minimum Hold time (th): Device types 01, 02 . 0 ns minimum Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 83025 DEFE
19、NSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless
20、 otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MI
21、L-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:
22、/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothin
23、g in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified here
24、in. Product built to this drawing that is produced by a Qualified Manufacturer Listing (QML) certified and qualified manufacturer or a manufacturer who has been granted transitional certification to MIL-PRF-38535 may be processed as QML product in accordance with the manufacturers approved program p
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