DLA SMD-5962-81019 REV B-1984 MICROCIRCUITS DIGITAL CMOS QUAD D LATCH MONOLITHIC SILICON《硅单片四重D锁存器 氧化物半导体数字微型电路》.pdf
《DLA SMD-5962-81019 REV B-1984 MICROCIRCUITS DIGITAL CMOS QUAD D LATCH MONOLITHIC SILICON《硅单片四重D锁存器 氧化物半导体数字微型电路》.pdf》由会员分享,可在线阅读,更多相关《DLA SMD-5962-81019 REV B-1984 MICROCIRCUITS DIGITAL CMOS QUAD D LATCH MONOLITHIC SILICON《硅单片四重D锁存器 氧化物半导体数字微型电路》.pdf(10页珍藏版)》请在麦多课文档分享上搜索。
1、= b 0333b TT4 A Remove one vendor - FSUI: M713 input setup Edltorial changes throughout !q I RLVIIIION8 11 ri: I “ I I voltage I vblo :rlA !:pv “ I I !:E 1 t I I :;!:I :IiA I I III I I I :I;I= :51L I o = 1.5 v I I I I ITc = 25c I I II I ITc = +125*C I III I I I 14“ = 0 v or I I II I ITc = +125c I II
2、I I I 1 I VD0 = +125c I I I- I I or 4.5 V 2D 3s5 IV I voltage I ifi:l= i :YA 1 IVIN = O V ;“IN - O Or 1 I 1 I“ - PF1og I l-r+ T I 1 I ItPHL2 I :TC a -5SC, +125.C i 10. 11 I 33 I 660 1 I DWC NO. 81019 8 REV PAGE 4 Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr
3、om IHS-,-,-= 9999996 0113973 425 W SIZE A DEFENSE ELECTRONICS SUPPLY CENTER TABLE 1. Electrical pcrfonmnce charrcterirtlcs. 1 I l I Group A I Ci nitr I 1 mn inax Nnit I I II I I Test ISYabOl I Conditions l/ I I I I Transi tion pl i ITc = 25C i 9 /13360!ns I 1 I I I time I I I I I 1 III I I ITHL I I
4、(Data iwut setup Its I !TC = 25C I 9 1-60 I 50 1 ns I I I I I II I I I I I I I I I I I II I - I 1 I I I I I I I I I I I I I I I II I I I 1 I I I pulse width I III I I I I I I I I Isubg“ups I ITc = -55C, +125C 1 10, 11 19 i 550 1 1 l-+ I I I ITc = -S5C, +125C I io, 11 I 4 I 75 I I I Ilc = *cc I 1 ITc
5、 = -55C. +125C 10. li I 9 1 180 I I tillc IMiniwn Clock Itp(cLK)I ITc = 25C I 9 ii3ians 1 I I I Lc = -5S.C, +125c I 10, 11 I 19 I 450 I I I 9 I6 112lnr I I I II IData Input hold ItH I I CODE IDENT. NO. DWG NO. 14933 81019 REV B 5 PAGE Provided by IHSNot for ResaleNo reproduction or networking permit
6、ted without license from IHS-,-,-i *I I 04 - O1 - u1 - O1 - CLOCK - POLARITY - D2 - “ss - . - I 16 - “OD 2 I5 - 04 3 14 - O4 4 13 - 03 !i 12 - a3 6 II - a3 7 10 - a2 0 9- a2 * FICURE i. Teminal connections. FWkE 21 Truth table. Provided by IHSNot for ResaleNo reproduction or networking permitted wit
7、hout license from IHS-,-,-H 999999b OLL3975 2T8 SIZE DEFENSE ELECTRONICS SUPPLY CENTER A i COOK IOCNT. NO. OW0 NO. 14933 81019 4. IALITI AfWRMCE PROVISIONS 4.1 knpliq anfi inspectlon. Saroling in Inspection pmcehall consist of the test su rwpr and LTW values shown i n tables III and IV of method WO5
8、 of !UL-STD-883, class B and as fol 7 ws: a. End-point clectrlcal parameters shall be as specified in table II hereln. b. Steady-state life test (method 1005 of nIL-.STD-83l condltlons: (11 (2) TA L25.C. riniuui. (3) Test duration: 1,W hours, except as pemitted by appendix B of HILA-36510 and c. Sub
9、groups 3 and 4 shall be added to the group C f nspactlon requirements and shall consf st of the tests. condltions. and limits specified for subgroups 10 rnd 11 of group A. Test conftlon A or O. Each clrtuft shall be driven with an appropriate signal to simulate clnuit applications and each cfnuit sh
10、all have maxiun lord applied. mthod 1005 Of MIL-STD-883. 5. PACKAGING 5.1 Packaging requlrmnts. The rcqulranwnts for packaglng shall be In accordance wlth 6. NOTES 6.1 Notes. Only the note DReevaluatlon of lot quality of the notes rpeclfled In IL4-385to n11-cm. shall apply to thls drawiq. SlZS CODE
11、IDLWT. NO. DUG NO. DEFENSE ELECTRONICS SUPPLY CENTER A 14933 81019 A PAGE 8 OAYTON,. OHIO RLV C * t c Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,- 9999996 OLL3977 070 W DEFENSE ELECTRONICS SUPPLY CENTER DAYTON. OHIO 6.2 Intended use. Dlicroclicui
12、ts confonilng to thls drawing are Intended for use when military speclflcatlons do not exist and quallfltd milltaw devices that will perfom the required functlon are not available for O01 rpplIcatlon. Thls drawing is intended exclusively to prevent the prollferatlon of unrmessarY duplIcate speciflca
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