DLA SMD-5962-38707 REV C-2012 MICROCIRCUIT LINEAR SWITCHED CAPACITOR VOLTAGE CONVERTER MONOLITHIC SILICON.pdf

《DLA SMD-5962-38707 REV C-2012 MICROCIRCUIT LINEAR SWITCHED CAPACITOR VOLTAGE CONVERTER MONOLITHIC SILICON.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-38707 REV C-2012 MICROCIRCUIT LINEAR SWITCHED CAPACITOR VOLTAGE CONVERTER MONOLITHIC SILICON.pdf（11页珍藏版）》请在麦多课文档分享上搜索。

1、 REV ISIONS LTR DESCRIPTION DATE (YR-MO-DA ) A PPROV ED A Added device type 02. Technical and editorial changes throughout. 94-03-08 M. A. FRYE B Replaced reference to MIL-STD-973 w ith reference to MIL-PRF-38535. Draw ing updated to reflect current requirements. -rrp 04-02-27 R. MONNIN C Update dra

2、w ing as part of 5 year review . -rrp 12-06-12 C. SAFFLE REV SHEET REV SHEET REV STA TUS REV C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPA RED BY MA RCIA B. KELLEHER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAW

3、ING THIS DRAWING IS AVAILABLE FOR USE BY A LL DEPA RTMENTS A ND A GENCIES OF THE DEPA RTMENT OF DEFENS E CHECKED BY CHA RLES E. BESORE A PPROV ED BY MICHA EL A . FRY E MICROCIRCUIT, LINEAR, SWITCHED CAPACITOR VOLTAGE CONVERTER, MONOLITHIC SILICON DRA WING A PPROV A L DA TE 93-03-05 A MSC N/A REV ISI

4、ON LEV EL C SIZE A CA GE CODE 67268 5962-38707 SHEET 1 OF 10 DSCC FORM 2233 A PR 97 5962-E371-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-38707 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REV ISION

5、 LEV EL C SHEET 2 DSCC FORM 2234 A PR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Pa

6、rt or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 38707 01 M G A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class d

7、esignator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF

8、-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LTC1044 Switched capacitor voltage conv

9、erter 02 ICL7660 Switched capacitor voltage converter 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compl

10、iant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style G

11、MACY1-X8 8 Can P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAND

12、ARD MICROCIRCUIT DRAWING SIZE A 5962-38707 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REV ISION LEV EL C SHEET 3 DSCC FORM 2234 A PR 97 1.3 Absolute maximum ratings. 1/ 2/ Supply voltage (V+): Device type 01 9.5 V dc Device type 02 10.5 V dc Input voltage (BOOST, LV, and OSC) . -0.3 V dc VIN V+

13、 + 0.3 V dc 2/ Output short circuit duration (V+ 5.5 V dc) Continuous Current into LV pin . 20 A Lead temperature (soldering, 10 seconds) +300C Storage temperature range -65C to +150C Power dissipation (PD): Device type 01 242 mW Device type 02: Case outline P . 640 mW 3/ Case outline G . 533 mW 3/

14、Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Case G . 150C/W Case P 100C/W Junction temperature (TJ) . +150C 1.4 Recommended operating conditions. Supply voltage range (V+): Device type 01 1.5 V dc to 9.0 V dc Device type 02, RL = 10 k, L

15、V = open 3.0 V dc to 10.0 V dc Device type 02, RL = 10 k, LV = GND 1.5 V dc to 3.5 V dc Ambient operating temperature range (TA) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this dra

16、wing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-8

17、83 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http

18、s:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performan

19、ce and affect reliability. 2/ Connecting any input terminal to voltages greater than V+ or less than ground may cause destructive latch-up. It is recommended that no inputs from sources operating from external supplies be applied prior to power-up of the device. 3/ Derate at 8.00 mW/C above +70C for

20、 case outline P, derate at 6.67 mW/C for case outline G. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-38707 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REV ISION LEV EL C SHEET 4 DSCC FORM 2234 A PR 97

21、 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMEN

22、TS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function

23、 as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as

24、specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Bl

25、ock diagram. The block diagram shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall

26、apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 he

27、rein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marke

28、d. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-385

29、35. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (se

30、e 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source

31、of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as requ

32、ired for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of pr

33、oduct (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the

34、manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 83 (see MIL-

35、PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-38707 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REV ISION LEV EL C SHEET 5 DSCC FORM 2234 A PR 97 TABLE I. Electrical performance

36、characteristics. Test Symbol Conditions -55C TA +125C V+ = 5.0 V unless otherwise specified Group A subgroups Device type Limits Unit Min Max Supply current I+ RL = , BOOST and OSC = no connection 1 01 200 A 1 02 175 2,3 250 RL = , BOOST and OSC = no connection, V+ = 10.5 V, LV = open 1/ 1 3.5 5.5 m

37、A 2,3 2.0 7.5 RL = , BOOST and OSC = no connection, V+ = 10 V, LV = open 1/ 1 3.0 5.0 2,3 2.0 7.0 Minimum supply voltage V+MIN RL = 10 k 1,2,3 01 1.5 V 02 3.0 Maximum supply voltage V+MAX RL = 10 k 1,2,3 01 9.0 V 02 10.0 Output voltage VOUT V+ = 10 V 1/ 1 02 -9.4 -10 V 2, 3 -9 -10 LV pin voltage VLV

38、 V+ = 10 V 1/ 1 02 4 7 V 2,3 3 8 Output resistance ROUT IL = 20 mA, fOSC = 5.0 kHz 1 All 100 2,3 150 IL = 3.0 m A, V+ = 2.0 V fOSC = 1.0 kHz 1,2,3 01 400 IL = 3.0 mA, V+ = 2.0 V fOSC = 27 kHz, LV = GND 02 400 Oscillator frequency 2/ fOSC COSC = 1.0 pF, V+ = 5.0 V 4,5,6 01 5.0 kHz COSC = 1.0 pF, V+ =

39、 2.0 V 1.0 Power efficiency PEFF RL = 5.0 k, fOSC = 5.0 kHz, TA = +25C 1 All 95 % Voltage conversion efficiency VCEFF RL = , TA = +25C 1 All 97 % Oscillator sink current ISINK VOSC = V+, BOOST = 0 V 1,2,3 01 3.0 A VOSC = V+, BOOST = V+ 20 Oscillator source current ISC VOSC = 0 V, BOOST = 0 V 1,2,3 0

40、1 3.0 A VOSC = 0 V, BOOST = V+ 20 1/ Guaranteed, if not tested, to the limits specified in table I. 2/ fOSC is tested with COSC = 100 pF to minimize the effects of test fixture capacitance loading. The 1.0 pF frequency is correlated to this 100 pF test point, and is intended to simulate the capacita

41、nce at the OSC pin when the device is plugged into a test socket and no external capacitor is used. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-38707 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REV IS

42、ION LEV EL C SHEET 6 DSCC FORM 2234 A PR 97 Device type 01 02 Case outlines G and P Terminal number Terminal symbol 1 BOOST NC 2 CAP + CAP + 3 GROUND GROUND 4 CAP - CAP - 5 VOUT VOUT 6 LV LV 7 OSC OSC 8 V+ V+ FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking

43、permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-38707 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REV ISION LEV EL C SHEET 7 DSCC FORM 2234 A PR 97 FIGURE 2. Block diagram. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

44、IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-38707 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REV ISION LEV EL C SHEET 8 DSCC FORM 2234 A PR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38

45、535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. F

46、or device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devi

47、ces prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the

48、preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternative