DLA SMD-5962-38705 REV F-2010 MICROCIRCUIT LINEAR VOLTAGE REGULATOR ADJUSTABLE MICROPOWER MONOLITHIC SILICON.pdf

《DLA SMD-5962-38705 REV F-2010 MICROCIRCUIT LINEAR VOLTAGE REGULATOR ADJUSTABLE MICROPOWER MONOLITHIC SILICON.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-38705 REV F-2010 MICROCIRCUIT LINEAR VOLTAGE REGULATOR ADJUSTABLE MICROPOWER MONOLITHIC SILICON.pdf（24页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Technical and editorial changes throughout. 91-12-27 M. A. FRYE B Delete test condition “D” and substitute test condition “C” as specified under 4.2.1a(1). Delete test condition “D” and substitute test condition “C” as specified under 4.4.3.1a. C

2、hanges in accordance with N.O.R. 5962-R022-93. 92-11-16 M. A. FRYE C Make changes to the load regulation test group A subgroups 2 and 3; delete the minimum limit of “-15.0 V” and substitute “-25 mV”; delete the maximum limit of “+15.0 mV” and substitute “+25 mV” as specified under Table I. Changes i

3、n accordance with N.O.R. 5962-R037-97. 96-11-04 R. MONNIN D Add case X which is a 10 lead flat pack. Make changes to 1.2.4, 1.3, and figure 1. Redrawn. - ro 98-02-20 R. MONNIN E Update drawing to reflect current requirements. - rrp 06-11-15 R. MONNINF Make correction to the SMD number on the footer

4、of sheets 2 through 23. Figure 1 for case X was deleted because it has been incorporated into MIL-STD-1835. - ro 10-02-09 C. SAFFLE THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV F F F F F F F F F SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV F F F F F F F F F F F F F F O

5、F SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY CH

6、ARLES REUSING APPROVED BY MICHALE A. FRYE MICROCIRCUIT, LINEAR, VOLTAGE REGULATOR, ADJUSTABLE, MICROPOWER, MONOLITHIC SILICON DRAWING APPROVAL DATE 91-05-14 AMSC N/A REVISION LEVEL F SIZE A CAGE CODE 67268 5962-38705 SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E077-10 Provided by IHSNot for ResaleNo re

7、production or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-38705 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consis

8、ting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN

9、. 1.2 PIN. The PIN is as shown in the following example: 5962 - 38705 01 M G X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q

10、 and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA devic

11、e. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LP2951 Adjustable micropower voltage regulator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as

12、 follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A B or S Certification and qualification to MIL-PRF-38535 Q or V Certification and qualif

13、ication to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can P GDIP1-T8 or CDIP2-T8 8 Dual-in-line X GDFP1-G10 10 Flat pack with gull wing leads 2 CQCC1-N20 20 Squa

14、re leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZ

15、E A 5962-38705 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Input voltage range -0.3 V dc to +30 V dc Lead temperature (soldering, 10 seconds) +260C Junction temperature (TJ) 2/ +160C Storage temperature rang

16、e . -65C to +150C Feedback input voltage range 3/ 4/ -1.5 V dc to +30 V dc Shutdown input voltage range 3/ . -0.3 V dc to +30 V dc Error comparator output voltage 3/ -0.3 V dc to +30 V dc Maximum power dissipation (PD): Case G 675 mW at +25C Cases P and X 1.0 W at +25C Case 2 . 1.25 W at +25C Therma

17、l resistance, junction-to-ambient (JA): (stll air) Case G 163C/W 95C/W at 500 linear feet per minute (LFPM) Case P 131C/W 75C/W at 500 linear feet per minute (LFPM) Case X 215C/W 130C/W at 500 linear feet per minute (LFPM) Case 2 . 95C/W 66C/W at 500 linear feet per minute (LFPM) Thermal resistance,

18、 junction-to-case (JC): Cases G, P, and 2 . See MIL-STD-1835 Case X 24C/W 1.4 Recommended operating conditions. 5/ 6/ Input voltage . +6 V dc Ambient operating temperature range (TA) -55C to +125C _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended oper

19、ation at the maximum levels may degrade performance and affect reliability. 2/ The device is protected by a thermal shutdown circuit which is designed to turn off the output transistor whenever the junction temperature exceeds +160C. 3/ May exceed input supply voltage. 4/ When used in dual supply sy

20、stems where the output voltage sees loads returned to a negative supply, the output voltage should be diode-clamped to ground. 5/ A 1.0 F capacitor is required between output and ground for stability. A 0.1 F capacitor is recommended between the input and ground when there is more than 10 inches of

21、wire on the input, or when the input is driven from a battery. 6/ When using external resistors to set the output voltage of the regulator, a minimum load current of 1 A is recommended. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCI

22、RCUIT DRAWING SIZE A 5962-38705 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to

23、 the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Te

24、st Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assi

25、st.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence

26、. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q or B and V or S shall be in accordance with MIL-PRF-38535 and as specified herei

27、n or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class leve

28、l B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q or B and V or S or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outl

29、ines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance cha

30、racteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup ar

31、e defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “

32、5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q or B and V or S shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance

33、mark. The certification mark for device classes Q or B and V or S shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license

34、 from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-38705 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA+125C Group A subgroups Device class Limits Unit unl

35、ess otherwise specified Min Max Output voltage VOUT1 M,B,Q, 4.975 5.025 V 2,3 S, or V 4.940 5.060 Line regulation VOLINE6 V VIN 30 V, 1 M,B,Q, -5.0 +5.0 mV IL= 1 mA 2,3 S, or V -25.0 +25.0 Load regulation VOLOAD-100 A IL -100 mA 1 M,B,Q, -5.0 +5.0 mV 2,3 S, or V -25.0 +25.0 Dropout voltage VDOIL= -1

36、00 mA 1 M,B,Q, 450 mV 2,3 S, or V 600 1 802,3 150Ripple rejection RR f = 120 Hz, TA= +25C, VIN= 0.1 Vrms, see figure 3 4 B,Q,S, or V 50 dB Ground current IGIL= -100 mA 1 M,B,Q, 12 mA 2,3 S, or V 14 1 120 A 2,3 140VIN= 30 V, VO= 15 V 1 120 2,3 140VIN= 30 V, VO= 15 V, 1 15 mA IL= -100 mA 2,3 20 Ground

37、 current change IGDIFF6 V VIN 30 V 1 M,B,Q, -30 +30 A 2,3 S, or V -50 +50 Ground current at current limit IGSC1 B,Q,S, 20 mA 2,3 or V 25See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE

38、A 5962-38705 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA+125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Dropout

39、ground current IGDOVIN= 4.5 V 1 M,B,Q, 170 A 2,3 S, or V 200 Current limit ISC2/ 1 M,B,Q, 200 mA 2,3 S, or V 220 Thermal regulation VRTHVIN= 30 V, IL= 50 mA, 1 M,B,Q, -12.5 12.5 mV TA= +25C S, or V Reference voltage VREF1 M,B,Q, 1.22 1.25 V 2,3 S, or V 1.20 1.26 Reference voltage line regulation VRL

40、INE2.3 V VIN 30 V 1 M,B,Q, -1.9 +1.9 mV 2,3 S, or V -10.0 +10.0 Reference voltage output regulation VRLOAD1.2 V VO 29 V 1 M,B,Q, -1.2 +1.2 mV VIN= 30 V 2,3 S, or V -5.0 +5.0 Feedback pin bias current IFB1 M,B,Q, 40 nA 2,3 S, or V 60 Error comparator output leakage current IOH3/ 1 M,B,Q, 1 A 2,3 S, o

41、r V 2 Error comparator output 5/ low voltage VOLVIN= 4.5 V, 4/ 11/ 1 M,B,Q, 250 mV IOL= 400 A 2,3 S, or V 400 Error comparator upper 5/ threshold voltage VUT6/ 1 M,B,Q, 40 mV 2,3 S, or V 25 Error comparator lower 5/ threshold voltage VLT7/ 1 M,B,Q, 95 mV 2,3 S, or V 140 Shutdown input logic voltage

42、VSDL8/ 1,2,3 M,B,Q, 0.6 V VSDH9/ S, or V 2.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-38705 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEE

43、T 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA+125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Shutdown pin input current ISDVSD= 2.4 V, 1 M,B,Q, 50 A ERROR = 30 V 2,3 S, or V 100 VSD= 30 V, 1 6

44、00 ERROR = 30 V 2,3 750 Regulator output current in shutdown ILKGVIN= 30 V, VSD= 2 V 2/ 1 B,Q,S, -10 10 A 2,3 or V -20 20 Output leakage current in shutdown ILSDVIN= 30 V, VSD= 1.5 V 1 M -10 -20 A 2,3 10 20 Output noise VNOISE1C1 = 1 F 7 B,S,Q, 600 Vrms 10 Hz to 100 kHz VNOISE2C1 = 3.3 F 10/ or V 25

45、0 1/ Unless otherwise specified, VIN= 6 V, IL= -100 A, CLOAD= 3.3 F (see figure 2), feedback pin tied to 5 V tap pin, output pin tied to sense pin, and VSD 0.6 V , and VOUT= 5 V nominal. 2/ Measured by shorting the output to ground through a 1.0 resistor (see figure 2). 3/ Voltage at test fixture pi

46、n 9 is 30 V. IOHmeasured by the pin 9 source. 4/ Voltage at test fixture pin 9 is 30 V. Measure VOLat the test fixture pin 4. 5/ Comparator thresholds are expressed in terms of a voltage differential at the feedback pin below the nominal reference voltage measured with VIN= 6 V. To express these thr

47、esholds in terms of output voltage change, multiply by the error amplifier gain, VOUT/ VREF= (R1+ R2) / R2. For example, at VOUT= 5 V, the error pin is guaranteed to go low when VOUTdrops by 95 mV x 5 V / 1.235 V, or 384 mV. Thresholds remain constant as a percent of VOUT, with the dropout warning o

48、ccurring at a maximum of 7.5 percent below the nominal VOUT. If the voltage at device pin 7(VLT) drops more than 95 mV below VREF(table I, +25C), the voltage at device pin 5 must be below 0.8 V (table III, +25C). If the voltage at device pin 7(VUT) then rises to less than 40 mV below VREF(table I, +25C), the voltage at device pin 5 must be above 2.0 V (table III, +25C). 6/ Voltage at test fixture pin 9 is 30 V. Measure VUTat the test fixture pin 4. 7/ Voltage at test fixture pin 9 is 30 V. Measure VLTat the te