DLA SMD-5962-38267 REV H-2006 MICROCIRCUIT MEMORY DIGITAL CMOS 128K X 8 BIT EEPROM MONOLITHIC SILICON《硅单片128千X8比特电压消除式可程序化只读存储器 氧化物半导体数字记忆微型电路》.pdf

《DLA SMD-5962-38267 REV H-2006 MICROCIRCUIT MEMORY DIGITAL CMOS 128K X 8 BIT EEPROM MONOLITHIC SILICON《硅单片128千X8比特电压消除式可程序化只读存储器 氧化物半导体数字记忆微型电路》.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-38267 REV H-2006 MICROCIRCUIT MEMORY DIGITAL CMOS 128K X 8 BIT EEPROM MONOLITHIC SILICON《硅单片128千X8比特电压消除式可程序化只读存储器 氧化物半导体数字记忆微型电路》.pdf（40页珍藏版）》请在麦多课文档分享上搜索。

1、REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add packages T and W. Add vendor CAGE 60395 as source of supply. Increase data retention to 20 years, minimum. Redrawn with changes. 93-06-29 M. A. Frye B Changes in accordance with NOR 5962-R139-94. 94-03-29 M. A. Frye C Changes in accordance wit

2、h NOR 5962-R278-94. 94-09-19 M. A. Frye D Changes in accordance with NOR 5962-R163-96. 96-06-27 M. A. Frye E Updated boilerplate. Added device types 16-18 and packages M and N to drawing along with vendor CAGE 0EU86 as supplier. Removed figures 9, 10 and 11 software data protect algorithms. Removed

3、vendor 61395 as supplier. - glg 98-07-22 Raymond Monnin F Corrected dimensions for packages “M“ and “N“. - glg 99-10-06 Raymond Monnin G Added device 19, packages 6 and 7, and updated boilerplate. ksr 01-10-05 Raymond Monnin H 5 year review, updated boilerplate paragraphs. ksr 06-05-15 Raymond Monni

4、n The original first page has been replaced. REV H H SHET 35 36 REV H H H H H H H H H H H H H H H H H H H H SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 REV STATUS REV H H H H H H H H H H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Kenneth Rice

5、STANDARD MICROCIRCUIT DRAWING CHECKED BY Charles Reusing DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY Charlie Besore THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 91-07-12 MICROCIRCU

6、IT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON AMSC N/A SIZE A CAGE CODE 67268 5962-38267 REVISION LEVEL H SHEET 1 OF 36 DSCC FORM 2233 APR 97 5962-E448-06 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWI

7、NG SIZE A 5962-38267 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A

8、 choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 38267 01 M X A | | | | | |

9、 | | | | | | Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA

10、levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circui

11、t function as follows: Software Generic data Device type number Circuit function Access time Write speed Write mode Endurance protect 01,16 1/ 128K x 8 EEPROM 250 ns 10 ms Byte/Page 10,000 cycle yes 02 128K x 8 EEPROM 250 ns 5 ms Byte/Page 10,000 cycle yes 03,17 128K x 8 EEPROM 200 ns 10 ms Byte/Pag

12、e 10,000 cycle yes 04 128K x 8 EEPROM 200 ns 5 ms Byte/Page 10,000 cycle yes 05,18 128K x 8 EEPROM 150 ns 10 ms Byte/Page 10,000 cycle yes 06 128K x 8 EEPROM 150 ns 5 ms Byte/Page 10,000 cycle yes 07,19 128K x 8 EEPROM 120 ns 10 ms Byte/Page 10,000 cycle yes 08 128K x 8 EEPROM 120 ns 3 ms Byte/Page

13、10,000 cycle yes 09 128K x 8 EEPROM 90 ns 10 ms Byte/Page 10,000 cycle yes 10 128K x 8 EEPROM 90 ns 3 ms Byte/Page 10,000 cycle yes 11 128K x 8 EEPROM 70 ns 10 ms Byte/Page 10,000 cycle yes 12 128K x 8 EEPROM 70 ns 3 ms Byte/Page 10,000 cycle yes 13 128K x 8 EEPROM 120 ns 3 ms Byte/Page 10,000 cycle

14、 yes 14 128K x 8 EEPROM 90 ns 3 ms Byte/Page 10,000 cycle yes 15 128K x 8 EEPROM 70 ns 3 ms Byte/Page 10,000 cycle yes 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Ve

15、ndor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulletin

16、at the end of this document and will also be listed in QML-38535 and MIL-HDBK-103. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-38267 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL

17、 H SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) shall be as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X GDIP1-T32 or CDIP2-T32 32 Dual in-line Y CQCC1-N44 44 Square chip carrier Z See figure 1 32 Flat package

18、U CQCC1-N32 32 Rectangular chip carrier T See figure 1 30 Grid array W See figure 1 36 Grid array M See figure 1 32 Flat package N See figure 1 32 Flat package 6 See figure 1(enhanced rad tolerant) 32 Flat package 7 See figure 1(enhanced rad tolerant) 32 Flat package 1.2.5 Lead finish. The lead fini

19、sh is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 2/ 3/ Supply voltage range (VCC) . -0.5 V dc to +6.0 V dc 4/ Operating case temperature range . -55C to +125C Storage temperature range . -65C to +150C Lead t

20、emperature (soldering, 10 seconds) . +300C Thermal resistance, junction-to-case (JC): Cases X, Y and U . See MIL-STD-1835 Cases T and W . 21C/W 5/ Case Z 18C/W 5/ Case M . 3C/W 5/ Case N . 2C/W 5/ Case 6 1.5C/W 5/ Case 7 1.5C/W 5/ Maximum power dissipation (PD) . 1.0 watts Junction temperature (TJ)

21、. +175C 6/ Endurance 10,000 cycles/byte (minimum) Data retention . 20 years minimum 1.4 Recommended operating conditions. Supply voltage range (VCC) . 4.5 V dc minimum to 5.5 V dc maximum Supply voltage (VSS) 0.0 V dc High level input voltage range (VIH) . 2.0 V dc to VCC+ 1.0 V dc 7/ Low level inpu

22、t voltage range (VIL) . -0.1 V dc to 0.8 V dc Case operating temperature range (TC) . -55C to +125C 1.5 Digital logic testing for device classes Q and V. Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . 100 percent 2/ Stresses above the absolute maximum ratin

23、g may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ All voltages referenced to VSS(VSS= ground), unless otherwise specified. 4/ Negative undershoots to a minimum of -1.0 V are allowed with a maximum of 20 ns pulse wi

24、dth. 5/ When the thermal resistance for this case is specified in MIL-STD-1835, that value shall supersede the value indicated herein. 6/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883.

25、 7/ For device types 16-19 only, VIHon RES shall be VCC- 0.5 V min. to VCC+ 1.0 V max. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-38267 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION L

26、EVEL H SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those c

27、ited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outli

28、nes. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order

29、 Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitat

30、ion. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-00 - Standard Guide for the Measurement of Single Event Phenomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100

31、 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/

32、www.jedec.org.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict

33、 between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requir

34、ements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requiremen

35、ts for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device cla

36、sses Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. Provided by IHSNot for ResaleNo reproduct

37、ion or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-38267 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 5 DSCC FORM 2234 APR 97 3.2.3 Truth table(s). The truth table(s) shall be as specified on figure 3. 3.2.3.1 Unprogr

38、ammed devices. The truth table for unprogrammed devices for contracts involving no altered item drawing shall be as specified on figure 3 herein. When required, in screening (see 4.2 herein), or quality conformance inspection groups A, B, C, or D (see 4.4 herein), the devices shall be programmed by

39、the manufacturer prior to test in a checkerboard or similar pattern (a minimum of 50 percent of the total number of bits programmed). 3.2.3.2 Programmed devices. The requirements for supplying programmed devices are not part of this document. 3.3 Electrical performance characteristics and postirradi

40、ation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements sh

41、all be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not f

42、easible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be i

43、n accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of

44、 compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be

45、listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-3

46、8535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of

47、microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for d

48、evice class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 42 (see MIL-PRF-38535, appendix A). 3.11 Processing of EEP