DLA SMD-5962-12225 REV A-2013 MICROCIRCUIT DIGITAL MEMORY CMOS FIELD PROGRAMMABLE GATE ARRAY 280 000 EQUIVALENT ASIC GATES WITH INDEPENDENT SRAM MONOLITHIC SILICON.pdf
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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add radiation hardness criteria for device type 01. Corrected footnote sequence for 1.5 and 1.6. Change table I to table IA. Add footnote 3 in table IA. Add table IB. Add Post column attach test CGA package information to 4.4.3 and table IIA. Add
2、 4.4.4.1 through 4.4.4.2. Update boilerplate to current MIL-PRF-38535 requirements. - lhl 13-12-09 Charles F. Saffle REV A A A SHEET 35 36 37 REV A A A A A A A A A A A A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 REV STATUS REV A A A A A A A A A A A A A A OF SH
3、EETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Laura Turner DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKE
4、D BY Laura Turner APPROVED BY Charles F. Saffle MICROCIRCUIT, DIGITAL, MEMORY, CMOS, FIELD PROGRAMMABLE GATE ARRAY, 280,000 EQUIVALENT ASIC GATES, WITH INDEPENDENT SRAM, MONOLITHIC SILICON DRAWING APPROVAL DATE 13-05-22 REVISION LEVEL A SIZE A CAGE CODE 67268 5962-12225 SHEET 1 OF 37 DSCC FORM 2233
5、APR 97 5962-E067-14 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12225 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing docume
6、nts two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance
7、 (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 12225 01 V X B Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing numbe
8、r 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Gene
9、ric number Circuit function 01 ATF280F 280k Field Programmable Gate Array 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF
10、-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 472 Column grid Array and Solder Column Interposer Y See figure 1 472 Land grid Array Z See figure 1 352 Quad Flatpack unfo
11、rmed Leads U See figure 1 256 Quad Flatpack unformed Leads 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12225
12、 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ Supply voltage range (VCC1) . -0.3 V to 2.0 V 3/ Supply voltage range (VCC2) . -0.3 V to 4.0 V 4/ All output voltages with respect to ground. -0.3 V to 4.0 V Maximum po
13、wer dissipation (PD). 3.3 W Case temperature range, (TC) -55C to +125C Thermal resistance, junction to case X,Y. 1C/W Z, U 2C/W Storage temperature range (Ts) -65C to +150C Maximum junction temperature (TJ) . +175C Lead temperature (soldering 10 sec) 5/ X, Y . +220C Z, U. +300C 1.4 Recommended opera
14、ting conditions. 2/ 6/ 7/ Supply voltage range (VCC1) 1.65 V to 1.95 V 3/ Supply voltage range (VCC2) 3.0 V to 3.6 V 4/ Ambient temperature (TA). -55C to 125C IO Power Supply (VCC2) 3.3 V 0.3 V LVDS I/O Power Supply (VCCB) 3.3 V 0.3 V LVDS Reference Voltage (VREF). 1.25 V 0.1 V Core Power Supply (VC
15、C1) 1.8 V 0.15 V _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ All voltages referenced to ground unless otherwise specified. 3/ For core. 4/ For interface I/Os. 5/
16、For Multilayer Quad Flat Package case, duration 10 seconds maximum at a distance of not less than 1.6mm from the device body and the same terminal shall not be resoldered until 3 minutes have elapsed; else, during reflow. 6/ When the device needs to be powered “on/off” while other circuits in the ap
17、plication are still powered, the recommended “power on/off” sequences are: Power-up: First power VCC2 (I/O), Then power VCC1 (Core). Power-down: First unpower VCC1 (Core), Then unpower VCC2 (I/O). It is also recommended to stop all activity during these phases as a bi-directional could be in an unde
18、termined state (input or output mode) and create bus contention. 7/ Cold sparing capability of the IOs allows to be electrically connected to a bus while its power supply remains in the range VSS-300mV/VSS+300mV, this without any risk of damage for the device. Cold-sparing allows a redundant spare t
19、o be electrically connected but unpowered until needed. For applications requiring high reliability, the capability to use of a redundant device is a key feature. Cold sparing availability on the ATF280F makes the FPGA especially suitable for high reliability systems. The cold sparing feature is ava
20、ilable for all the IOs: All the General Purpose IOs All the LVDS IOs They present an high input impedance when unpowered VSS-300mV / VSS+300mV and exhibit a negligible leakage current if exposed to a non-null input voltage at that time. Provided by IHSNot for ResaleNo reproduction or networking perm
21、itted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-12225 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features Maximum total dose available (dose rate = 0.083 rads(Si)/s) 100 krads(Si) 8/ Single event phenomena
22、 (SEP): Heavy ion no SEL occurs at effective LET (see 4.4.4.4) . 70 MeV-cm2/mg 9/ Proton test no SEL occurs at threshold LET (see 4.4.4.4) 7.9 MeV-cm2/mg 9/ (proton energy=230 MeV at fluence =7.4x1011 particles/cm2) 1.6 Digital logic testing for device classes Q and V. Fault coverage measurement of
23、manufacturing logic tests (MIL-STD-883, test method 5012). . 95 percent 10/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, th
24、e issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface S
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