DLA SMD-5962-08222 REV A-2012 MICROCIRCUIT LINEAR PRECISION QUAD OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make changes to paragraph 1.5 and footnote 8/ by deleting 100 krads(Si) and replacing with 300 krads(Si) for ELDRS testing. - ro 12-01-11 C. SAFFLE REV SHEET REV A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV A A A A A A A A A

2、A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE

3、CHECKED BY RAJESH PITHADIA APPROVED BY CHARLES F. SAFFLE MICROCIRCUIT, LINEAR, PRECISION, QUAD OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 11-08-18 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-08222 SHEET 1 OF 23 DSCC FORM 2233 APR 97 5962-E126-12 Provided by IHSNot for

4、ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels cons

5、isting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the P

6、IN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 08222 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device clas

7、ses Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA

8、device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 RHF484 Radiation hardened, precision, quad, operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the pr

9、oduct assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 C

10、ase outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 14 Flat pack 1/ 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix

11、 A for device class M. _ 1/ Al2O3ceramic header with metalized bottom side and pullback of 0.01 inch x 0.02 inch. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08222 DLA LAND AND MARITIME COLUMBUS, OHIO 432

12、18-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ 3/ Supply voltage (VCC) 18 V Differential input voltage (VID) . 1.2 V 4/ Input voltage (VIN) -VCC 0.3 V to +VCC+0.3 V 5/ Input current (IIN) 45 mA Power dissipation (PD) at TA= +25C for TJ= 150C 312.5 mW 6/ Stora

13、ge temperature range (TSTG) . -65C to +150C Maximum junction temperature (TJ) +150C Lead temperature (soldering, 10 seconds) +260C 7/ Thermal resistance, junction-to-case (JC) . 15C/W Thermal resistance, junction-to-ambient (JA) 80C/W 1.4 Recommended operating conditions. Supply voltage (+VCC (-VCC)

14、 . 4 V to 14 V Common-mode input voltage range (VCM) . -VCCto +VCC Settling time (tS) (VCCfrom4 V to 14 V, RL= 10 k, CL= 100 pF, step = 100 mV) 600 ns Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s) 300 kra

15、ds(Si) 8/ The manufacturer supplying RHA parts on this drawing has performed a characterization test at 300 krads(Si) to demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) according to MIL-STD-883 method 1019, paragraph 3.13.1.1. Therefore, this part may be consider

16、ed ELDRS free to tested total dose of 300 krads(Si) at the low dose rate of 10 mrad(Si)/s. This part is tested to a total dose of 300 krads(Si) at the high dose rate of 50 300 rads(Si)/s. _ 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at

17、the maximum levels may degrade performance and affect reliability. 3/ All voltage values, except differential voltage are within respect to network ground terminal. 4/ The differential voltage is the voltage difference between the pins +IN and IN of a channel. 5/ The voltage on either input must nev

18、er exceed VCC+ 0.3 V nor 16 V. 6/ Short circuits can cause excessive heating and destructive dissipation. Values are typical. 7/ Distance of not less than 1.5 mm from the device body and the same lead shall not be re-soldered until three minutes have elapsed. 8/ For device type 01, this part has bee

19、n tested and does not demonstrate low dose rate sensitivity at 300 krads(Si). For low dose rate, the radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition D. For high dose rate, the radiation end point limits for the no

20、ted parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVIS

21、ION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are th

22、ose cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case

23、Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Aven

24、ue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a speci

25、fic exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM pl

26、an shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, s

27、ee appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case o

28、utline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Block diagram. The block diagram shall be as specified on figure 3. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be ma

29、intained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characte

30、ristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are def

31、ined in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 3.5 Marking. The part shall be marked with

32、 the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA design

33、ator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ a

34、s required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the require

35、ments of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listi

36、ng as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certifica

37、te of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Mar

38、itime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain

39、the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit

40、group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. E

41、lectrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C Group A subgroups Device type Limits Unit Min Max Unless otherwise specified, +VCC = 2 V, -VCC = -2 V, and VCM= 0 V. Offset voltage VIO1 01 -300 300 V 2,3 -500 500 Input bias current IIBNo load 1 01 -60 60 nA 2,3 -100 100

42、 Input offset current IIONo load, VOUT= 0 V 1 01 -15 15 nA 2,3 -35 35 Supply current ICCNo load 1,2,3 01 2.6 mA Common mode rejection ratio CMRR No load, -VCCVCM +VCC1,2,3 01 72 dB Gain bandwidth product GBP VOUT = 200 mVpp, f = 100 kHz, RL= 1 k, CL= 100 pF 1 01 6 MHz 2,3 3.5 Large signal voltage ga

43、in AVDRL= 10 k, VOUT= -6.5 V to 6 V 1 01 74 dB 2,3 60 High level output voltage VOH+VCC= 14 V, -VCC= 0 V, RL= 1 k 1 01 13.6 V 2,3 13.5 +VCC= 14 V, -VCC= 0 V, RL= 10 k 1 13.8 2,3 13.6 Low level output voltage VOL+VCC= 14 V, -VCC= 0 V, RL= 1 k 1 01 0.2 V 2,3 0.3 +VCC= 14 V, -VCC= 0 V, RL= 10 k 1 0.08

44、2,3 0.2 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 9 DSCC FORM 2234 APR 97 TABLE I. Electrical

45、performance characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C Group A subgroups Device type Limits Unit Min Max Unless otherwise specified, +VCC = 7 V, -VCC = -7 V, and VCM= 0 V. Output sink current ISINKVOUT = +VCC(forced), 1 01 20 mA no load, VID= -1 V 2,3 15 Output source curre

46、nt ISOURCEVOUT= -VCC(forced), 1 01 15 mA no load, VID= +1 V 2,3 10 Slew rate SR RL= 1 k, VOUT= -4.8 V to 4.8 V, 4 01 2 V/s VOUT= 4.8 V to -4.8 V 5,6 1.7 1/ RHA devices supplied to this drawing have been characterized through all levels M, D, P, L, R, and F of irradiation. However, this device is tes

47、ted only at the “R” level for low dose rate and at the “F” level for high dose rate. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. The radiation end points limits for the note

48、d parameters are guaranteed for the conditions specified in MIL-STD-883, method 1019 condition D for low dose rate and condition A for high dose rate. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-08222 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 10 DSCC FORM 2234 APR 97 Case outline X FIGURE 1. Case outline. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,