DLA SMD-5962-03201 REV C-2012 MICROCIRCUIT LINEAR POSITIVE FIXED 3 V LOW DROPOUT VOLTAGE REGULATOR MONOLITHIC SILICON.pdf
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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change to footnote 5/ in 1.3. Added footnote 4/ to KVItest in table I. Made correction to figure 3. gt 03-02-19 R. MONNIN B Update drawing as part of 5 year review - jt 10-10-04 C. SAFFLE C Add case outline U. Delete references to device class M
2、requirements. - ro 12-11-28 C. SAFFLE REV SHEET REV SHEET REV STATUS REV C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY Rajesh Pithadia DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS D
3、RAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Rajesh Pithadia APPROVED BY Raymond Monnin MICROCIRCUIT, LINEAR, POSITIVE, FIXED, 3 V, LOW DROPOUT, VOLTAGE REGULATOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 03-01-22 AMSC N/A REVISION LEVEL C SIZE
4、A CAGE CODE 67268 5962-03201 SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E043-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-03201 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSC
5、C FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN)
6、. When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 03201 01 V X X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.
7、2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s)
8、identify the circuit function as follows: Device type Generic number Circuit function 01 RH-L4913-30 Radiation hardened, positive, fixed, 3 V, 2 A, low dropout voltage regulator 02 RH-L4913-30 Radiation hardened, positive, fixed, 3 V, 3 A, low dropout voltage regulator 1.2.3 Device class designator.
9、 The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outl
10、ine letter Descriptive designator Terminals Package style U See figure 1 3 Bottom terminal chip carrier X CDFP4-F16 16 Flat pack 1/ Y CBCC1-N3 3 Bottom terminal chip carrier Z See figure 1 3 TO-257 single row flange mount with insulated case and ceramic seal 1.2.5 Lead finish. The lead finish is as
11、specified in MIL-PRF-38535 for device classes Q and V. _ 1/ AlN ceramic header with metallized bottom side and pullback of 0.01 x 0.02 inches. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-03201 DLA LAND AN
12、D MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ DC input voltage 14 V Output current: Case X . 2 A Cases U and Y 3 A Case Z . 3 A Power dissipation at TA= 25C: Case X . 1 W 3/ Cases U and Y . 1.5 W 3/ Case Z . 2.5 W 3/ Power dissip
13、ation at TC= 25C: Cases U, X, and Y 15 W Case Z . 10 W Thermal resistance, junction-to-case (JC): Cases U, X and Y 8.3C/W Case Z . 12.5C/W Thermal resistance, junction-to-ambient (JA): Case X . 125C/W Cases U and Y . 83C/W Case Z . 50C/W Storage temperature range -65C to +150C Operating temperature
14、range -55C to +150C Lead temperature (soldering, 10 seconds) +300C 4/ Maximum junction temperature (TJ) +150C 5/ 1.4 Recommended operating conditions. Input voltage range (VIN) . 4.5 V to 12 V Output voltage (VOUT) . 3 V Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features
15、. Maximum total dose available (dose rate = 50 - 300 rads(Si)/s): Device types 01 and 02 300 krads(Si) 6/ Latch-up . 7/ 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/
16、At TA2.4 V, VIN= VOUT + 2 V 1,2,3 01 1 mA Inhibit voltage VINHON VIN= VOUT+ 2.5 V, IOUT= 5 mA 1,2,3 01 0.8 V VINHOFF 2.4 Dropout voltage VdIOUT= 400 mA 1 01, 02 0.45 V 2 0.55 3 0.4 IOUT= 1 A 1 0.65 2 0.8 3 0.55 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking
17、 permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-03201 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless other
18、wise specified Group A subgroups Device type Limits Unit Min Max Supply voltage rejection 5/ SVR VIN= VOUT + 2.5 V, IOUT= 5 mA, f = 120 Hz, TA= +25C 4 01, 02 60 dB VIN= VOUT + 2.5 V, IOUT= 5 mA, f = 33 kHz, TA= +25C 30 Inhibit propagation 5/ delay tPLHVINHIBIT= 2.4 V, IOUT= 400 mA, VIN= VNOM+ 2.5 V,
19、 see figure 4 9 01, 02 20 s tPHL100 1/ Device types 01 and 02 have been characterized through all levels M, D, P, L, R, F of irradiation. However, this device is tested at the “F” level. Pre and Post irradiation values are identical unless otherwise specified in table I. When performing post irradia
20、tion electrical measurements for any RHA level, TA= +25C. 2/ VIN= VOUT+ 2.5 V, CIN= 1 F, COUT= 1 F. 3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the con
21、ditions specified in MIL-STD-883, method 1019, condition A. 4/ KVI= (Vrline) X 100 / VOUT1where Vrline= VOUT1 VOUT1; VOUT1= VOUTwhen VIN= VNOM+ 2.5 V and IOUT= 5 mA, VOUT1= VOUTwhen VIN= VMAX= 12 V and IOUT= 5 mA 5/ Controlled via design or process and is not directly tested. Characterized on initia
22、l design release and upon design or process changes which affect this parameter. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of co
23、mpliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manuf
24、acturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided
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