DLA SMD-5962-02535 REV E-2011 MICROCIRCUIT LINEAR POSITIVE FIXED 3 3 V LOW DROPOUT VOLTAGE REGULATOR MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change to footnote 5/ in 1.3. Added footnote 4/ to KVItest in table I. Made correction to figure 3. - rrp 03-02-19 R. MONNIN B Add 3.1.1 and die APPENDIX A. - ro 05-01-25 R. MONNIN C Add a low dose rate radiation note to 1.5. Add a new paragraph

2、under section 2. Revise footnote 3/ as specified under Table I. Delete 4.4.4.1.1 and make correction to A.4.3.1. - ro 06-05-03 R. MONNIN D Make change to low dose rate radiation note in 1.5. Delete non-Government publications paragraph under section 2. Revise footnote 3/ as specified under Table I.

3、- ro 06-11-28 R. MONNIN E Update drawing as part of 5 year review. - jt 11-12-05 C. SAFFLE REV SHEET REV E E E E E E SHEET 15 16 17 18 19 20 REV STATUS REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RAJESH PITHADIA DLA LAND AND MARITIME COLUMBUS

4、, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, POSITIVE, FIXED, 3.3 V, LOW DROPOUT, VOLTAGE RE

5、GULATOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 03-01-22 AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-02535 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E081-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE

6、 A 5962-02535 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case

7、outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 02535 01 V X A Federal stock class designat

8、or RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriat

9、e RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types identify the circuit function as follows: Device type Generic nu

10、mber Circuit function 01 RH-L4913-33 Radiation hardened, positive, fixed, 3.3 V, 2 A, low dropout voltage regulator 02 RH-L4913-33 Radiation hardened, positive, fixed, 3.3 V, 3 A, low dropout voltage regulator 1.2.3 Device class designator. The device class designator is a single letter identifying

11、the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1

12、.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDFP4-F16 16 Flat pack 1/ Y CBCC1-N3 3 Bottom terminal chip carrier Z See figure 1 3 TO-257 single row flange mount with insulated case and ceramic

13、seal 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. _ 1/ AlN ceramic header with metallized bottom side and pullback of 0.01 x 0.02 inches. Provided by IHSNot for ResaleNo reproduction or networking perm

14、itted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02535 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ DC input voltage 14 V Output current: Case X . 2 A Case Y 3 A Case Z . 3 A Power dissipat

15、ion at TA= 25C: Case X . 1 W 3/ Case Y . 1.5 W 3/ Case Z . 2.5 W 3/ Power dissipation at TC= 25C: Cases X and Y . 15 W Case Z . 10 W Thermal resistance, junction-to-case (JC): Cases X and Y 8.3C/W Case Z . 12.5C/W Thermal resistance, junction-to-ambient (JA): Case X . 125C/W Case Y . 83C/W Case Z .

16、50C/W Storage temperature range -65C to +150C Operating temperature range -55C to +150C Lead temperature (soldering, 10 seconds) +300C 4/ Maximum junction temperature (TJ) +150C 5/ 1.4 Recommended operating conditions. Input voltage range (VIN) 4.8 V to 12 V Output voltage (VOUT) . 3.3 V Ambient ope

17、rating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 - 300 rads(Si)/s): Device types 01 and 02 300 Krads (Si) Latch-up . 6/ The Radiation Hardness Assurance (RHA) devices specified on this drawing have been characterization tested for Enh

18、anced Low Dose Rate Sensitivity (ELDRS). The characterization has been performed at a Low Dose Rate (LDR) of approximately 40 mrads/s and a High Dose Rate (HDR) of 50-300 rad/s. The post-irradiation parametric values for LDR and HDR samples were within the parametric limits as specified in Table I.

19、Characterization testing was performed to the Total Dose level as specified above 300 krad(Si). Therefore, the RHA devices on this drawing have been shown not to exceed specification limits at a dose rate of 40 mrads/s at 300 krad(Si). Future testing of the devices on this drawing may therefore be p

20、erformed at HDR only. Changes to the RHA product listed in this drawing that may affect the RHA response will require analysis to determine whether further characterization for LDR sensitivity is required. The RHA part numbers specified herein that were previously tested at HDR will not be changed b

21、ased on this characterization testing. 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ At TA2.4 V, VIN= VOUT + 2 V 1,2,3 01 1 mA Inhibit voltage VINHON VIN= VOUT+ 2.5 V

22、, IOUT= 5 mA 1,2,3 01 0.8 V VINHOFF 2.4 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02535 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM

23、2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Dropout voltage VdIOUT= 400 mA 1 01, 02 0.45 V 2 0.55 3 0.4 IOUT= 1 A 1 0.65 2 0.8 3 0.55 Supply voltage r

24、ejection 5/ SVR VIN= VOUT + 2.5 V, IOUT= 5 mA, f = 120 Hz, TA= +25C 4 01, 02 60 dB VIN= VOUT + 2.5 V, IOUT= 5 mA, f = 33 kHz, TA= +25C 30 Inhibit propagation delay tPLHVINHIBIT= 2.4 V, IOUT= 400 mA, VIN= VNOM+ 2.5 V, see figure 4 9 01, 02 20 s 5/ tPHL100 1/ Device types 01 and 02 have been character

25、ized through all levels M, D, P, L, R, F of irradiation. However, this device is tested at the “F” level. Pre and Post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/ VIN= VOUT+ 2.5 V, CI

26、N= 1 F, COUT= 1 F. 3/ These parts have been characterization tested at Low Dose Rate, see 1.5. 4/ KVI= (Vrline) x 100/VOUT1where Vrline= VOUT1 VOUT1; VOUT1= VOUTwhen VIN= VNOM+ 2.5 V and IOUT= 5 mA, VOUT1= VOUTwhen VIN= VMAX= 12 V and IOUT= 5 mA 5/ Controlled via design or process and is not directl

27、y tested. Characterized on initial design release and upon design or process changes which affect this parameter. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02535 DLA LAND AND MARITIME COLUMBUS, OHIO 432

28、18-3990 REVISION LEVEL E SHEET 8 DSCC FORM 2234 APR 97 Case Z Symbol Inches Millimeters Min Max Min Max A .185 .210 4.70 5.33 A1 .035 .045 0.89 1.14 A2 .115 .125 2.92 3.18 b .025 .035 0.64 0.89 D .650 .660 16.51 16.76 D1 .410 .420 10.41 10.67 E .410 .420 10.41 10.67 e .095 .105 2.41 2.67 H .202 .212

29、 5.13 5.38 L .600 .650 15.24 16.51 L1 .527 .537 13.39 13.64 N - .028 - 0.71 P .140 .150 3.56 3.81 Note: The U.S. government preferred system of measurement is the metric SI system. However, since this item was originally designed using inch-pound units of measurement, in the event of conflict betwee

30、n the metric and inch-pound units, the inch-pound units shall take precedence. FIGURE 1. Case outlines Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02535 DLA LAND AND MARITIME COLUMBUS, OHIO 432

31、18-3990 REVISION LEVEL E SHEET 9 DSCC FORM 2234 APR 97 Device type 01 02 Case outlines X Y Z Terminal number Terminal symbol 1 VOUT1VOUTVIN2 VOUT1VINGND 3 VINGND VOUT4 VIN- - 5 VIN- - 6 VOUT2- - 7 VOUT2- - 8 ISC - - 9 NC - - 10 OCM - - 11 NC - - 12 NC - - 13 GND - - 14 INH - - 15 NC - - 16 SENSE - -

32、 NC = No connect FIGURE 2. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02535 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 10 DSCC FORM 2234 APR 97 FIGURE 3.

33、 Block diagram Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02535 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 11 DSCC FORM 2234 APR 97 FIGURE 4. Inhibit propagation delay wavefor

34、m. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02535 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 12 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device

35、 classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and in

36、spection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening

37、 shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by

38、 the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD

39、-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table IIA herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the devi

40、ce manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity

41、upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table IIA herein. c. Additional screening fo

42、r device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be

43、those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified

44、 herein. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4

45、.1 through 4.4.4). 4.4.1 Group A inspection. a. Tests shall be as specified in table IIA herein. b. Subgroups 5, 6, 7, 8, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MIC

46、ROCIRCUIT DRAWING SIZE A 5962-02535 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 13 DSCC FORM 2234 APR 97 TABLE IIA. Electrical test requirements. Test requirements Subgroups (in accordance with MIL-STD-883, method 5005, table I) Subgroups (in accordance with MIL-PRF-38535,

47、 table III) Device class M Device class Q Device class V Interim electrical parameters (see 4.2) 1 1 1 Final electrical parameters (see 4.2) 1,2,3,4,9 1/ 1,2,3,4,9 1/ 1,2,3,4,9 1/ 2/ Group A test requirements (see 4.4) 1,2,3,4,9 1,2,3,4,9 1,2,3,4,9 Group C end-point electrical parameters (see 4.4) 1

48、,2,3 1,2,3 1,2,3 2/ Group D end-point electrical parameters (see 4.4) 1,2,3 1,2,3 1,2,3 Group E end-point electrical parameters (see 4.4) 1 1 1 1/ PDA applies to subgroup 1. 2/ Delta limits as specified in table IIB shall be required where specified, and the delta limits shall be computed with reference to the zero hour electrical parameters. TABLE