DLA SMD-5962-02524 REV G-2013 MICROCIRCUIT LINEAR POSITIVE ADJUSTABLE LOW DROPOUT VOLTAGE REGULATOR MONOLITHIC SILICON.pdf

《DLA SMD-5962-02524 REV G-2013 MICROCIRCUIT LINEAR POSITIVE ADJUSTABLE LOW DROPOUT VOLTAGE REGULATOR MONOLITHIC SILICON.pdf》由会员分享，可在线阅读，更多相关《DLA SMD-5962-02524 REV G-2013 MICROCIRCUIT LINEAR POSITIVE ADJUSTABLE LOW DROPOUT VOLTAGE REGULATOR MONOLITHIC SILICON.pdf（22页珍藏版）》请在麦多课文档分享上搜索。

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change to footnote 5/ in 1.3. Added footnote 4/ to KVItest in table I. Made correction to figure 3. -rrp 03-02-19 R. Monnin B Add 3.1.1 and die appendix A. -rrp 05-01-27 R. Monnin C Add low dose rate radiation note to 1.5. -rrp 06-04-17 R. Monnin

2、 D Make change to low dose rate radiation note in 1.5. Deleted Non-Government publications paragraph in section 2 and in Appendix A. Revise footnote 3/ as specified under table I. Deleted accelerated aging test paragraph 4.4.4.1.1. -rrp 06-11-28 R. Monnin E Add device type 03. Add case outline U. Ma

3、ke changes to 1.2.2, 1.2.4, 1.3, 1.5, table I, figure 1, and figure 2. -rrp 08-02-11 R. Heber F For figure 1, case outline U, correct dimension A. - drw 12-11-06 Charles F. Saffle G Make corrections to the Quiescent current (ON state) test as specified under Table I. Under the fourth test condition,

4、 delete IOUT= 300 mA and substitute 1 A. Under the device type column, delete device type 02. For subgroup 1, delete 25 mA and substitute 60 mA. For subgroup 2, delete 20 mA and substitute 40 mA. For subgroup 3, delete 40 mA and substitute 100 mA. - ro 13-03-27 C. Saffle REV SHEET REV G G G G G G G

5、SHEET 15 16 17 18 19 20 21 REV STATUS REV G G G G G G G G G G G G G G OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rajesh Pithadia DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR US

6、E BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Rajesh Pithadia APPROVED BY Raymond Monnin MICROCIRCUIT, LINEAR, POSITIVE, ADJUSTABLE, LOW DROPOUT, VOLTAGE REGULATOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 03-01-06 AMSC N/A REVISION LEVEL G SIZE A CAGE CODE 67268 5962-025

7、24 SHEET 1 OF 21 DSCC FORM 2233 APR 97 5962-E302-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02524 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 2 DSCC FORM 2234 APR 97 1. SCOP

8、E 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choi

9、ce of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 02524 01 V X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.

10、2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types identify the circuit functio

11、n as follows: Device type Generic number Circuit function 01 RH-L4913-ADJ Radiation hardened, positive, adjustable, 2 A, low dropout voltage regulator with inhibit acces 02 RH-L4913-ADJ Radiation hardened, positive, adjustable, 1 A, low dropout voltage regulator with inhibit acces 03 RH-L4913-ADJ Ra

12、diation hardened, positive, adjustable, 3 A, low dropout voltage regulator with inhibit acces 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qual

13、ification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDFP4-F16 16 Flat pack 1/ Y See figure 1 14 Dual flat pack with gullwing leads Z See figure 1 14 Flat pack U See figure

14、1 5 Bottom terminal chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. _ 1/ AlN ceramic header with metalized bottom side and pullback of 0.01 x 0.02 inches. Provided by IHSNot for ResaleNo reproduction or networking permitted without license

15、 from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02524 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ DC input voltage 14 V Output current: Case X 2 A Cases Y and Z 1 A Case U 3 A Power dissipation at TA= 25C: Ca

16、se X 1 W 3/ Cases Y and Z 0.8 W 3/ Case U 1.5 W 3/ Power dissipation at TC= 25C: Cases X and U 15 W Cases Y and Z 3 W Thermal resistance, junction-to-case (JC): Cases X and U 8.3C/W Cases Y and Z 42C/W Thermal resistance, junction-to-ambient (JA): Case X 125C/W Cases Y and Z 156C/W Case U 83C/W Stor

17、age temperature range -65C to +150C Operating temperature range -55C to +150C Lead temperature (soldering, 10 seconds) +300C 4/ Maximum junction temperature (TJ) +150C 5/ 1.4 Recommended operating conditions. Input voltage range (VIN) . 3 V to 12 V Output voltage range (VOUT) . 1.23 V to 9 V Ambient

18、 operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 - 300 rads(Si)/s): Device types 01, 02, and 03 . 300 krads(Si) Latch-up . 6/ The Radiation Hardness Assurance (RHA) devices specified on this drawing have been characterization test

19、ed for Enhanced Low Dose Rate Sensitivity (ELDRS). The characterization has been performed at a Low Dose Rate (LDR) of approximately 40 mrads/s and a High Dose Rate (HDR) of 50-300 rad/s. The post-irradiation parametric values for LDR and HDR samples were within the parametric limits as specified in

20、 Table I. Characterization testing was performed to the Total Dose level as specified above 300 krads(Si). Therefore, the RHA devices on this drawing have been shown not to exceed specification limits at a dose rate of 40 mrads/s at 300 krads(Si). Future testing of the devices on this drawing may th

21、erefore be performed at HDR only. Changes to the RHA product listed in this drawing that may affect the RHA response will require analysis to determine whether further characterization for LDR sensitivity is required. The RHA part numbers specified herein that were previously tested at HDR will not

22、be changed based on this characterization testing. _ 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ At TA2.4 V, VIN= VOUT + 2 V 1,2,3 01, 02, 03 1 mA Dropout voltage V

23、dIOUT= 400 mA, 1 01, 02, 0.45 V +2.5 V VOUT +9 V 2 03 0.55 3 0.4 IOUT= 1 A, 1 01, 03 0.65 +2.5 V VOUT +9 V 2 0.8 3 0.55 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02524 DLA

24、 LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics continued. Test Symbol Conditions 1/, 2/, 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Inhibit voltage VINHON V

25、IN= VOUT+ 2.5 V, 1, 2, 3 01, 02, 0.8 V VINHOFF IOUT= 5 mA 03 2.4 Supply voltage 5/ rejection SVR VIN= VOUT + 2.5 V, IOUT= 5 mA, f = 120 Hz, TA= +25C 4 01, 02, 03 60 dB VIN= VOUT + 2.5 V, IOUT= 5 mA, f = 33 kHz, TA= +25C 30 Inhibit propagation 5/ delay tPLHVINHIBIT= 2.4 V, VOUT= 3 V, IOUT= 400 mA, 9

26、01, 02, 03 20 s tPHLVIN= VNOM+ 2.5 V, see figure 4 100 1/ Device types 01, 02, and 03 have been characterized through all levels M, D, P, L, R, F of irradiation. However, this device is tested at the “F” level. Pre and Post irradiation values are identical unless otherwise specified in table I. When

27、 performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/ VIN= VOUT+ 2.5 V, TA= 25C, CIN= 1 F, COUT= 1 F. 3/ These parts have been characterization tested at low dose rate, see 1.5. 4/ KVI= (Vrline) x 100/VOUT1where Vrline= VOUT1 VOUT1, VOUT1= VOUTwhen VIN= VNOM+ 2.5 V and

28、 IOUT= 5 mA, VOUT1= VOUTwhen VIN= VMAX= 12 V and IOUT= 5 mA 5/ Controlled via design or process and is not directly tested. Characterized on initial design release and upon design or process changes which affect this parameter. Provided by IHSNot for ResaleNo reproduction or networking permitted wit

29、hout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02524 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 7 DSCC FORM 2234 APR 97 Case Y Symbol Inches Millimeters Note Min Max Min Max A1 .058 .077 1.49 1.95 A2 .013 .017 0.33 0.43 A3 .023 .035 0.60 0.90 b .015 .

30、019 0.38 0.48 C .004 .007 0.102 0.152 D .384 .399 9.76 10.14 D1 .295 .305 7.50 7.75 E .394 .419 10.00 10.65 E1 .266 .278 6.75 7.06 E2 .354 BSC 9.00 BSC E3 .170 BSC 4.31 BSC e .050 BSC 1.27 BSC N 14 14 1 Note: 1. N is the maximum number of terminal positions. 2. The U.S. government preferred system o

31、f measurement is the metric SI system. However, since this item was originally designed using inch-pound units of measurement, in the event of conflict between the metric and inch-pound units, the inch-pound units shall take precedence. FIGURE 1. Case outlines. Provided by IHSNot for ResaleNo reprod

32、uction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02524 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 8 DSCC FORM 2234 APR 97 Case Z Symbol Inches Millimeters Note Min Max Min Max A .077 .091 1.96 2.31 b .015 .019 0.38 0.48

33、 C .004 .006 0.102 0.152 D .384 .399 9.76 10.14 E .266 .278 6.75 7.06 E2 .170 BSC 4.31 BSC E3 .030 - 0.76 - e .050 BSC 1.27 BSC L .237 - 6.00 - Q .013 .017 0.33 0.43 S1 .005 - 0.13 - N 14 14 1 Note: 1. N is the maximum number of terminal positions. 2. The U.S. government preferred system of measurem

34、ent is the metric SI system. However, since this item was originally designed using inch-pound units of measurement, in the event of conflict between the metric and inch-pound units, the inch-pound units shall take precedence. FIGURE 1. Case outlines continued. Provided by IHSNot for ResaleNo reprod

35、uction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02524 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 9 DSCC FORM 2234 APR 97 Case U Symbol Inches Millimeters Min Typ Max Min Typ Max Notes A 0.112 0.121 0.13 2.84 3.07 3.30

36、1 A1 0.010 0.015 0.020 0.25 0.38 0.51 b 0.281 0.286 0.291 7.13 7.26 7.39 b1 0.195 0.200 0.205 4.95 5.08 5.21 b2 0.090 0.095 0.100 2.28 2.41 2.54 b3 0.115 0.120 0.125 2.92 3.05 3.18 D 0.540 0.545 0.550 13.71 13.84 13.97 D1 0.030 - - 0.76 - - E 0.291 0.296 0.301 7.39 7.52 7.65 e .075 BSC 1.91 BSC NOTE

37、S: 1. Measurement prior to solder coating the mounting pads on bottom of package. 2. The terminal #1 identifier must be located within the zone indicated. Details of terminal #1 identifier are optional. 3. The U.S. government preferred system of measurement is the metric SI system. However, since th

38、is item was originally designed using inch-pound units of measurement, in the event of conflict between the metric and inch-pound units, the inch-pound units shall take precedence. FIGURE 1. Case outline continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license

39、from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02524 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 10 DSCC FORM 2234 APR 97 Device type 01 02 03 Case outlines X Y and Z U Terminal number Terminal symbol 1 VOUT1NC VOUT2 VOUT1VOUT1ADJ 3 VINVININH 4 VINNC VIN5 VINVINGND

40、 6 VOUT2VOUT2- 7 VOUT2ISC - 8 ISC OCM - 9 NC NC - 10 OCM NC - 11 NC NC - 12 NC GND - 13 GND INH - 14 INH ADJ - 15 ADJ - - 16 NC - - NC = No connect FIGURE 2. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT

41、DRAWING SIZE A 5962-02524 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 11 DSCC FORM 2234 APR 97 FIGURE 3. Block diagram. FIGURE 4. Inhibit propagation delay waveform. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD

42、MICROCIRCUIT DRAWING SIZE A 5962-02524 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 12 DSCC FORM 2234 APR 97 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the ent

43、ire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Cert

44、ification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the r

45、equirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and h

46、erein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection pro

47、cedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 4.2 Screening. For device classes Q and V, screening shall be in accordance with

48、 MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. 4.2.1 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained