DLA SMD-5962-02523 REV B-2008 MICROCIRCUIT DIGITAL CMOS RADIATION HARDENED MCS-96 BASED MICROCONTROLLER MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update boilerplate to current MIL-PRF-38535 requirements. - CFS 07-05-14 Thomas M. Hess B Add device types -03 and -04. Reduce the RHA Total Dose from 300krads to 100krads for device types 01 and 02. - CFS 08-12-01 Thomas M. Hess REV B B B B B B

2、SHEET 35 36 37 38 39 40 REV B B B B B B B B B B B B B B B B B B B B SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Larry T. Gauder DEFENSE SUPPLY CENTER COLUMBUS STANDA

3、RD MICROCIRCUIT DRAWING CHECKED BY Charles F. Saffle COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Thomas M. Hess MICROCIRCUIT, DIGITAL, CMOS, RADIATION HARDENED, MCS-96 BASED AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROV

4、AL DATE 02-09-26 MICROCONTROLLER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL SIZE A CAGE CODE 67268 5962-02523 B SHEET 1 OF 40 DSCC FORM 2233 APR 97 5962-E310-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 596

5、2-02523 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of ca

6、se outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 02523 03 Q X X Federal stock class desig

7、nator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropria

8、te RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type 1/ Ge

9、neric number Circuit function 01 UT80CRH196KDS MCS-96 Based Microcontroller 02 UT80CRH196KDS MCS-96 Based Microcontroller 03 UT80CRH196KDS MCS-96 Based Microcontroller 04 UT80CRH196KDS MCS-96 Based Microcontroller 1.2.3 Device class designator. The device class designator is a single letter identify

10、ing the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-385

11、35 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 68 Quad flatpack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-3853

12、5, appendix A for device class M. _ 1/ Device types 01 and 03 have an operating temperature range of -55C to +125C, and device types 02 and 04 have an operating temperature range of -40C to +125C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAND

13、ARD MICROCIRCUIT DRAWING SIZE A 5962-02523 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ DC supply voltage (VDD) -0.3 V to +6.0 V Voltage on any pin (VI/O) . -0.3 V to VDD+0.3 V DC input current (II) . 10 mA S

14、torage temperature (TSTG) . -65C to +150C Maximum power dissipation (PD) 4W Maximum junction temperature (TJ) +175C Thermal resistance, junction-to-case (JC) per MIL-STD-883, method 1012 . 2C/W 1.4 Recommended operating conditions. DC supply voltage (VDD) +4.5 V to +5.5 V Temperature range (TC): Dev

15、ice types 01 and 03 . -55C to +125C Device types 02 and 04 . -40C to +125C DC input voltage (VIN) . 0 V to VDD High level input voltage (XTAL1)(VIH) . 0.7VDDLow level input voltage (XTAL1) (VIL) 0.3VDDMin high level input voltage (VIH) . +2.2 V 2/ Max low level input voltage (VIL) +0.8 V 2/ 1.5 Radi

16、ation features. Total dose (dose rate = 50 to 300 rad(Si)/s) (Device types 01 and 02) . 100 Krads (Si) Total dose (effective dose rate = 1 rad(Si)/s) (Device types 03 and 04) . 300 Krads (Si) 3/ Single event phenomenon (SEP) effective: Linear energy threshold (LET) onset, no upsets 25 MeV-cm2/mg 4/

17、Linear energy threshold (LET), no latch-up . 128 MeV-cm2/mg 4/ Neutron fluence . 1.0E14 n/cm24/ 1.6 Digital logic testing for device classes Q and V. Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) 97 percent _ 1/ Stresses above the absolute maximum rating may

18、 cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Except XTAL1 and RESET. 3/ Device types 03 and 04 are irradiated at a dose rate = 50 300 rads(Si)/s in accordance with MIL-STD-883, method 1019, condition A, and are gua

19、ranteed to the maximum total dose specified. The effective dose rate after extended room temperature anneal = 1 rad(Si)/s per MIL-STD-883, method 1019, condition A, section 3.11.2. The total dose specification for these devices only applies to the specified effective dose rate, or lower, environment

20、. 4/ Limits are guaranteed by design or process, but not production tested unless specified by the customer through the purchase order or contract. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02523 DEFENS

21、E SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless o

22、therwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-

23、STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/a

24、ssist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the doc

25、uments are the issues of the documents cited in the solicitation or contract. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of these documents are av

26、ailable online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA 19428-2959.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. N

27、othing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modif

28、ied in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices a

29、nd as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02523 DEFENSE SUPPLY CENTER COLUMBUS

30、COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for devic

31、e class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Block diagram. The block diagram shall be as specified on figure 3. 3.2.4 Load circuit and wavefo

32、rms. The Load circuit and waveforms shall be as specified on figure 4. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3

33、Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical

34、test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packa

35、ges where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance wi

36、th MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as re

37、quired in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of complianc

38、e shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, fo

39、r device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PR

40、F-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that

41、affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option o

42、f the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 105 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD

43、MICROCIRCUIT DRAWING SIZE A 5962-02523 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ VDD= 5.0 V 10% unless otherwise specified Group A subgroups Device type Limits

44、 Unit Min MaxLow level input voltage (except XTAL1, RESET) VIL1, 2, 3 All 0.8 V High level input voltage (except XTAL1, RESET) VIH1, 2, 3 All 2.2 V Low level input voltage (XTAL1) VIL11, 2, 3 All .3VDDV High level input voltage (XTAL1) VIH11, 2, 3 All .7VDDV IOH= -100 A 4/ (CMOS) VDD-.25 IOH= -4.0 m

45、A (TTL) High level output voltage (Standard outputs) (except RESET) 3/ VOHIOH= -8.0 mA (TTL) 5/ 1, 2, 3 All 2.4 V High level output current (Open drain outputs 6/ with pullups) IOH1Pin tied to VSS4/ 1, 2, 3 All -225 -20 A IOL= 100 A (CMOS) 4/ 0.25 IOL= 4.0 mA (TTL) Low level output voltage VOLIOL= 8

46、.0 mA (TTL) 5/ 1, 2, 3 All 0.4 V Positive going threshold RESET VT+1, 2, 3 All .5VDD.7VDDV Negative going threshold RESET VT-1, 2, 3 All .3VDD.5VDDV Typical range of Hysteresis RESET 4/ VH1, 2, 3 All .6 V Pullups on ADV, RD, RESET, Port 1, Port 2.0, 2.6, 2.7, AD0-15, WR, WRL, BHE, ALE, CLKOUT 4/ RPU

47、VCC= 5.5 V, VIN= VSS1, 2, 3 All 24.4 275 K Pulldown on INST, NMI, HSO.0-HSO.3, P2.5 4/ RPDVCC= 5.5 V, VIN= VDD1, 2, 3 All 24.4 275 K Logical 1 input current (Test mode entry avoidance) 7/ IIHVIN= VIH1, 2, 3 All -225 -20 A VIN= VSSor VDDoutputs in Z State -10 +10 I/O leakage current, standard inputs

48、and outputs in Z state ILIVIN= VSSor VDDstandard inputs 1, 2, 3 All -1 +1 A I/O leakage current, with pullups 8/ ILI1VIN= VSS1, 2, 3 All -225 -20 A I/O leakage current, with pulldowns 9/ ILI2VIN= VDD1, 2, 3 All 20 225 A Power supply current in reset IDDRESETCLK 20 MHz, RESET VIL1, 2, 3 All 76 mA Active power supply current AIDDCLK 20 MHz, typical program flow 1, 2, 3 All 130 mA See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02523 DEFENSE SUPPLY C