DLA SMD-5962-02511 REV J-2013 MICROCIRCUIT LINEAR RADIATION HARDENED HIGH SPEED DUAL OUTPUT PULSE WIDTH MODULATOR WITH SEU PROTECTION MONOLITHIC SILICON.pdf

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1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add footnote 4/ in 1.5. Add footnote 2/ and make changes to IDCHGtest in table I. - rrp 03-06-17 R. MONNIN B Add new footnote under 1.3 and 1.4. Add footnote 3/ to Table I. Make changes to the conditions column for VLINE, VOM, FPSRR, FOM, PSRR, a

2、nd ISUtests as specified under Table I. Make corrections to figure 2 and figure 3. Add paragraph 4.4.4.2. - ro 06-04-05 R. MONNIN C Make change to the Charge current test subgroup 3 maximum limit as specified under Table I. - ro 07-11-20 R. HEBER D Add device type 02. Make changes to 1.2.2, 1.5, Tab

3、le I, figure 1, figure 2, Table IIB, and Appendix A. - ro 08-01-29 R. HEBER E Correct logic diagram in figure 2. -rrp 08-12-03 R. HEBER F Make corrections to figure 3 Irradiation connections. Add Table IB. Make corrections to 4.4.4.2. - ro 10-12-13 C. SAFFLE G Add “Analog inputs” parameter under par

4、agraph 1.3, absolute maximum ratings. Add paragraph 6.7. Update boilerplate paragraphs to current MIL-PRF-38535 requirements. - ro 11-02-15 C. SAFFLE H Add device types 03, 04, and 05. Delete radiation exposure circuit. Add Clock out to PWM switching delay (tPWM) test under Table IA and timing diagr

5、am. Add subgroups 9, 10, and 11 to Table IIA. Update paragraph 2.2. - ro 12-08-22 C. SAFFLE J Add device class T to device type 01. - ro 13-08-19 C. SAFFLE REV SHEET REV J J J J J J J J SHEET 15 16 17 18 19 20 21 22 REV STATUS REV J J J J J J J J J J J J J J OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 1

6、2 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONN

7、IN MICROCIRCUIT, LINEAR, RADIATION HARDENED, HIGH SPEED, DUAL OUTPUT PULSE WIDTH MODULATOR WITH SEU PROTECTION, MONOLITHIC SILICON DRAWING APPROVAL DATE 02-02-06 AMSC N/A REVISION LEVEL J SIZE A CAGE CODE 67268 5962-02511 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E516-13 Provided by IHSNot for Resale

8、No reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02511 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisti

9、ng of high reliability (device class Q), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiat

10、ion Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the followi

11、ng example: 5962 F 02511 01 T X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-

12、PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 IS-1825ASRH Radiation hardened, DI dual output p

13、ulse width modulator with single event upset (SEU) protection 02 ISL71823ASRH Radiation hardened, DI dual output pulse width modulator with single event upset (SEU) protection 03 IS-1825BSRH Radiation hardened, DI dual output pulse width modulator with single event upset (SEU) protection 04 ISL71823

14、BSRH Radiation hardened, DI dual output pulse width modulator with single event upset (SEU) protection 05 IS-1825BSEH Radiation hardened, DI dual output pulse width modulator with single event upset (SEU) protection 1.2.3 Device class designator. The device class designator is a single letter identi

15、fying the product assurance level as follows: Device class Device requirements documentation Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan. Provided b

16、y IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02511 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-S

17、TD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16 Dual-in-line X CDFP4-F20 20 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage (VCCand

18、VC) 4/ 35 V dc Analog inputs (INV, NON-INV, RAMP, ILIM/SD, SOFT START) -0.3 V to VCC+ 0.3 V Power dissipation (PD) 714 mW Junction temperature (TJ) . +175C maximum Lead temperature (soldering, 10 seconds) +260C maximum Storage temperature range . -65C to +150C Thermal resistance, junction-to-case (J

19、C): Case E . 18C/W Case X . 15C/W Thermal resistance, junction-to-ambient (JA): Case E . 70C/W Case X . 80C/W 1.4 Recommended operating conditions. 2/ 3/ Supply voltage (VCCand VC) 4/ 12 V to 20 V Ambient operating temperature range (TA) . -50C to +125C _ 1/ Stresses above the absolute maximum ratin

20、g may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and ambie

21、nt temperature range of -50C to +125C unless otherwise noted. 4/ VCCand VCmust be at the same potential. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02511 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 R

22、EVISION LEVEL J SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features: Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device types 01, 02, 03, 04: Device classes Q or V 300 krads(Si) 5/ Device class T 100 krads(Si) 5/ Device type 05 . 300 krads(Si) 6/ Maximum total dose available (dose

23、 rate 0.01 rads(Si)/s): Device type 05 . 50 krads(Si) 6/ Single event phenomena (SEP): No Single event latch-up (SEL) occurs at effective LET (see 4.4.4.3) . 87.4 MeV/(mg/cm2) 7/ No Single event burn out (SEB) occurs at effective LET (see 4.4.4.3) 87.4 MeV/(mg/cm2) 8/ Single event transients (SET) o

24、bserved at an effective LET (see 4.4.3) 35 MeV / (mg/cm2) 8/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of the

25、se documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electro

26、nic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins

27、 Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 5/ Device types 01, 02, 03, and 04 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified i

28、n MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si) for classes Q or V and 100 krads(Si) for class T. 6/ Device type 05 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a m

29、aximum total dose of 300 krads(Si), and condition D to a maximum total dose of 50 krads(Si). 7/ Devices 01, 02, 03, 04, and 05 use dielectrically isolated (DI) technology and latch up is physically not possible. 8/ Limits are characterized at initial qualification and after any design or process cha

30、nges which may affect the SEP characteristics but are not production tested unless specified by the customer through the purchase order or contract. For more information on SEP test results, customers are requested to contact manufacturer. Provided by IHSNot for ResaleNo reproduction or networking p

31、ermitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02511 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 5 DSCC FORM 2234 APR 97 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.

32、 Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) from Heavy Ion Irradiation of semiconductor Devices. (Copies of these documents are av

33、ailable online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence.

34、Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modi

35、fied in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical di

36、mensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on

37、figure 1. 3.2.3 Logic diagram. The logic diagram shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon

38、request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full ambient operating temperature range.

39、 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be ma

40、rked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T and V shall b

41、e in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-3

42、8535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device clas

43、ses Q, T and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproducti

44、on or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02511 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test Symbol Test conditions 1/ 2/ -50C TA +125C unl

45、ess otherwise specified Device type Group A subgroups Limits Unit Min Max Reference section. Output voltage VREF01, 02, 1 5.00 5.20 V 03, 04, 05 2,3 4.920 5.28 M,D,P,L,R,F 1 4.920 5.28 Line regulation VLINE12 V VS 20 V 3/ 01, 02, 1 -15 15 mV 03, 04, 05 2,3 -20 20 M,D,P,L,R,F 1 -20 20 Load regulation

46、 VLOAD1 mA IOUT 10 mA 01, 02, 1 -25 25 mV 03, 04, 05 2,3 -50 50 M,D,P,L,R,F 1 -50 50 Total output variation VOMVS= 12 V, 20 V, 3/ 01, 02, 1 5.00 5.20 V IL= 1 mA, 10 mA 03, 04, 05 2,3 4.92 5.28 M,D,P,L,R,F 1 4.92 5.28 Short circuit current ISCVREF= 0 V 01, 02, 1 30 mA 03, 04, 05 2,3 20 M,D,P,L,R,F 1

47、20 Oscillator section. Initial accuracy FO01, 02, 4 340 425 kHz 03, 04, 05 5,6 300 425 M,D,P,L,R,F 4 300 425 Voltage stability FPSRR12 V VS 20 V 3/ 01, 02, 4 -3 3 % 03, 04, 05 5,6 -5 5 M,D,P,L,R,F 4 -3 3 Total variation FOMVS= 12 V, 20 V 3/ 01, 02, 4 340 425 kHz 03, 04, 05 5,6 300 425 M,D,P,L,R,F 4

48、300 425 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-02511 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 7 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Continued. Test Symbol Conditions 1/ 2/ -50C TA +125C unless otherwise specified Device type Group A subgroups Limits Unit Min Max Oscillator section continued. Clock out high voltage VCLKH01, 02, 1 4.0 V 03, 04, 05 2,3 3.75 M,D,P,L,R