DLA MIL-STD-750-2 CHANGE 4-2013 TEST METHOD STANDARD MECHANICAL TEST METHODS FOR SEMICONDUCTOR DEVICES PART 2 TEST METHODS 2001 THROUGH 2999.pdf
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1、i INCHPOUND MILSTD7502 w/CHANGE 4 1 September 2013 SUPERSEDING MILSTD750-2 w/CHANGE 3 29 April 2013 (see 6.4) DEPARTMENT OF DEFENSE TEST METHOD STANDARD MECHANICAL TEST METHODS FOR SEMICONDUCTOR DEVICES PART 2: TEST METHODS 2001 THROUGH 2999 AMSC N/A FSC 5961The documentation and process conversion
2、measures necessary to comply with this revision shall be completed by 15 October 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-STD-750-2 w/CHANGE 4 ii FOREWORD 1. This standard is approved for use by all Departments and Agencies of the De
3、partment of Defense. 2. This revision has resulted in many changes to the format, but the most significant one is the splitting the document into parts. See MILSTD750 for the change summary. 3. Comments, suggestions, or questions on this document should be addressed to: Commander, Defense Logistics
4、Agency, DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 432183990, or emailed to semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil. Provided by IHSNot for
5、 ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-STD-750-2 w/CHANGE 4 iii SUMMARY OF CHANGE 4 MODIFICATIONS 1. Test method 2006 was revised to include default conditions. 2. Test method 2056 was revised to include examination and failure criteria requirements. Test Met
6、hod Paragraph Modification 2006 3 Changed 2006 4 Changed 2056 3.3 Changed 2056 3.4 Changed Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-STD-750-2 w/CHANGE 4 iv PARAGRAPH PAGE FOREWORD.ii SUMMARY OF CHANGE 4 MODIFICATIONS iii 1. SCOPE . 1 1.1 P
7、urpose . 1 1.2 Numbering system 1 1.2.1 Classification of tests . 1 1.2.2 Test method revisions . 1 1.3 Methods of reference 1 2. APPLICABLE DOCUMENTS 2 2.1 General . 2 2.2 Government documents 2 2.2.1 Specifications, standards, and handbooks 2 2.3 Non-Government publications . 2 2.4 Order of preced
8、ence . 3 3. DEFINITIONS . 4 3.1 Acronyms, symbols, and definitions 4 3.2 Acronyms used in this standard 4 4. GENERAL REQUIREMENTS . 4 4.1 General . 4 4.2 Test circuits . 5 4.3 Destructive tests 5 4.4 Nondestructive tests 6 4.5 Laboratory suitability . 6 5. DETAILED REQUIREMENTS . 6 6. NOTES 6 6.1 In
9、tended use . 6 6.2 International standardization agreement . 7 6.3 Subject term (key word) listing 7 6.4 Supersession data. 7 6.5 Change notations 7 CONCLUDING MATERIALC-1 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-STD-750-2 w/CHANGE 4 v CON
10、TENTS FIGURE TITLE 20171 Uniform force distribution 20172 Rotational capability 20173 Perpendicular force application 20174 Die shear strength criteria 20371 Minimum bond pull limits 20372 Wire loop angle 20373 Flat loop wire pull testing 20381 Sample apparatus fixture with force measuring gauge 203
11、82 Close up view of sample apparatus fixture 20383 Condition B 20384 Condition C 20385 Condition D 20521 Typical STU 20691 Bond dimensions 20692 Torn bonds 20693 Acceptable and unacceptable voids and excessive pigtails 20694 Acceptable and unacceptable bonding material build-up 20695 Extraneous bond
12、ing material build-up 20696 Acceptable and unacceptable excess material 20701 Metallization scratches and voids (expanded contact) 20702 Cracks and chips 20703 Bond dimensions 20704 Lifted or torn bonds 20705 Mesh geometry 20706 Interdigitated geometry 20707 Spine geometry 20711 Radial cracks extend
13、ing more than one-half the distance from pin to outer member 20712 Circumferential cracks 20713 Bubbles in glass exceeding one-third of the sealing area 20714 Single bubble or void 20715 Two bubbles in a line 20716 Interconnecting bubbles 20717 Meniscus cracks 20718 Chip outs 20719 Transparent glass
14、 diode 207110 Braze separation/delamination 207111 Crack in braze metallization 207112 Discontinuous braze metallization 207113 Ceramic feedthrough visual inspection criteria 207114 Rejectable foreign material conditions 20721 Metallization scratches, probe marks and voids 20722 Innermost guard band
15、 metallization scratches, probe marks and voids 20723 Active region metallization scratches, probe marks and voids 20724 Pad and contact metallization scratches, probe marks and voids 20725 Contact metallization scratches, probe marks and voids 20726 Metallization probing damage 20727 Metallization
16、bridging between two normally unconnected metallization areas 20728 Metallization bridging between two normally unconnected metallization paths 20729 Metallization misalignment, cross section view 207210 Metallization misalignment 207211 Passivation and diffusion faults 207212 Passivation and diffus
17、ion faults, cross section view Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-STD-750-2 w/CHANGE 4 vi CONTENTS FIGURE TITLE 207213 Passivation and diffusion faults 207214 Contact window in a diffused area which extends across a junction faults 2
18、07215 Die cracks and chips 207216 Bond dimensions 207217 Lift and torn bonds 207218 Ball bond diameter is less than 2 times or greater than 5 times the wire diameter 207219 Ball bonds where the wire exit is not completely within the periphery of the ball 207220 Ball bonds where exiting wire is not w
19、ithin boundaries of the bonding pad 207221 Intermetallic formation at the periphery of gold ball bond 207222 Wedge bonds on the die or package post criteria 207223 Tailless bond dimensions 207224 Wire bond to bonding pad area misalignment 207225 Wire bond tails contacting with metallization not cove
20、red by glassivation 207226 Wire bond tails limits 207227 Bonds on the flat surface of the post top 207228 A bond on top of another bond 207229 Bond to unglassivated die metallization 207230 Bond to glassivated die metallization 207231 Adjacent bonds violating separation limits 207232 Wire that viola
21、tes allowed limits 207233 Wire nicks, tears, bonds, cuts, crimps, scoring, or neckdown 207234 Bond tearing at interface of pad and wire 207235 Wire that has no arc or stress relief 207236 Wire not within 10 degrees of the perpendicular to the surface of the chip 207237 Excessive lead burn at lead po
22、st weld 207238 Pigtail to unglassivated active metal spacing 207239 Bow or loop in wire between double bonds at post 207240 Excessive loops, bows, or sags in wire 207241 Non-embedded foreign particles present on the surface of the die 207242 Glass-embedded foreign particles on the die that bridge pa
23、ths or junctions 207243 Ink on the surface of the die 207244 Balling of the die mounting material 207245 Tipped or tilted die 207246 Acceptable and unacceptable voids and excessive pigtails 207247 Acceptable and unacceptable bonding material buildup 207248 Extraneous bonding material buildup 207249
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