DLA MIL-PRF-19500 759 REV A-2012 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) DUAL TRANSISTOR N-CHANNEL AND P-CHANNEL LOGIC-LEVEL SILI.pdf
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1、 MIL-PRF-19500/759A 20 January 2012 SUPERSEDING MIL-PRF-19500/759 1 June 2011 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) DUAL TRANSISTOR, N-CHANNEL AND P-CHANNEL, LOGIC-LEVEL SILICON TYPES 2N7632UD, JANTXVR, F, AND JA
2、NSR, F This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requireme
3、nts for dual N-channel and P-channel, enhancement-mode, low-threshold logic level, MOSFET, radiation hardened (total dose and single event effects(SEE), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum ra
4、ting (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions. * 1.2 Physical dimensions. See figure 1, UD (LCC-6). * 1.3 Maximum ratings. TA= +25C, unless otherwise specified. Type PT(free air) (1) TA= +25C RJA(2) VDS= VDGVDS= VDGVGSVGSTJand TSTGN-channel P-channel N-chan
5、nel P-channel W C/W V dc V dc V dc V dc C 2N7632UD 1.0 125 100 -100 20 20 -55 to (each channel device) (each N or P) +150 Type ID1 (3) (4) TC= +25C ID2 TC= +100C ISIDM (5) N-channel P-channel N-channel P-channel N-channel P-channel N-channel P-channel A dc A dc A dc A dc A dc A dc A (pk) A (pk) 2N76
6、32UD 0.92 -0.65 0.58 -0.41 0.92 -0.65 3.68 -2.60 (See notes next page) AMSC N/A FSC 5961INCH-POUND Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact i
7、nformation can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 April 2012. Provided by IHSNot for
8、 ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/759A 2 * 1.3 Maximum ratings. - continued. (1) Derate linearly 0.008 W/C (each channel) for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit
9、. IDis limited by package and internal construction. (4) See figure 3, maximum drain current graph. (5) IDM= 4 X ID1as calculated in note (3). * 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 ID= 0.25mAdc VGS(TH)1VDS VGSID= 0.25 mA dc Max IDSS1VGS= 0 VDS= 80 percent rate
10、d VDSMax rDS(on)(1) VGS= 4.5V, ID= ID2TJ= +25C TJ= +150C N-channel P-channel N-channel P-channel N-channel P-channel N-channel P-channel N-channel P-channel V dc V dc V dc V dc A dc A dc Min Max Min Max 2N7632UD 100 -100 1.0 2.0 -1.0 -2.0 1 1 0.70 1.65 1.19 2.39 Type EAS IAS=ID1EAS IAS=ID1N-channel
11、P-channel 2N7632UD mJ 19.3 mJ 34 (1) Pulsed (see 4.5.1). ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/759A 3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specifie
12、d in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that
13、they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to
14、the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods fo
15、r Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise
16、 noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Pro
17、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/759A 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminals are isolated from the case. 4 N is the quantity of terminal positions. 5. Th
18、e package shall meet dimension A without solder. Maximum allowable solder thickness is .006 inch (0.15 mm). 6 Applied solder to the terminals will increase flatness tolerance by additional .004 inch (0.10 mm). 7. Q1 is N-channel. Q2 is P-channel. All are un-committed. 8. In accordance with ASME Y14.
19、5M, diameters are equivalent to x symbology. * FIGURE 1. Dimensions and configuration of leadless chip carrier (LCC-6). Pin no. Transistor 1 Drain no. 1 2 Gate no. 1 3 Gate no. 2 4 Drain no. 2 5 Source no. 2 6 Source no. 1 Dimensions Symbol Inches Millimeters Min Max Min Max BL .240 .250 6.10 6.35 B
20、L2.250 6.35 BW .165 .175 4.19 4.45 BW2.175 4.45 CH .044 .080 1.12 2.03 LH .026 .039 0.66 0.99 LL1.060 .070 1.52 1.78 LL2.082 .098 2.08 2.49 LS1.095 .105 2.41 2.67 LS2.045 .055 1.14 1.40 LW .022 .028 0.56 0.71 UD Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro
21、m IHS-,-,-MIL-PRF-19500/759A 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualif
22、ying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. * 3.4 Interface and physical dimensions. Interfac
23、e and physical dimensions shall be as specified in MIL-PRF-19500 and figure 1 (UD) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.
24、2). 3.4.2 Internal construction. Multiple chip construction shall not be permitted. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. 3.6.1 Handling. MOS devices must be
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