DLA MIL-PRF-19500 758-2010 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR N-CHANNEL SILICON TYPES 2N7609U8 AND 2N7609U8C JANT.pdf

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1、 MIL-PRF-19500/758 28 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7609U8 AND 2N7609U8C, JANTXVR, F AND G AND JANSR, F AND G This specification is approved for use by all

2、Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET, radiatio

3、n hardened (total dose and single event effects (SEE), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANHC and JANKC die versions. 1.2 Phys

4、ical dimensions. See figure 1, surface mount, for U8 (metal lid) and U8C (ceramic lid). 1.3 Maximum ratings. TA= +25C, unless otherwise specified. Type PT(1) TC= +25C PTTA= +25C RJC(2) VDSVDGVGSID1(3) (4) TC=+25C ID2(3) (4) TC= +100C ISIDM (5) TJand TSTG2N7609U8, 2N7609U8C W 23 W 0.8 C/W 5.4 V dc 10

5、0 V dc 100 V dc 10 A dc 6.5 A dc 4.1 A dc 6.5 A (pk) 26 C -55 to +150 (1) Derate linearly by 0.185 W/C for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. IDis limited by package and internal construction. (4) See figure 3, maxi

6、mum drain current graph. (5) IDM= 4 X ID1as calculated in note (3). AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mi

7、l. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IH

8、S-,-,-MIL-PRF-19500/758 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 VGS(TH)1VDS VGSMax IDSS1VGS= 0 Max rDS(on)(1) VGS= 4.5V, ID= ID2EAS IAS ID= 0.25mA dc ID= 0.25 mA dc VDS= 80% of rated VDSTJ= +25C TJ= +150C 2N7609U8, 2N7609U8C V dc 100 V dc Min Max 1.0 2.0 A dc 1.

9、0 0.29 0.55 mJ 21 A 6.5 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional in

10、formation or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2

11、.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFIC

12、ATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standar

13、dization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes preced

14、ence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/758 3 Symbol Dimensions Note Inches Millimeters Min Max M

15、in Max BL .305 .321 7.75 8.15 BW .200 .226 5.08 5.74 CH (for U8) .097 2.46 U8 Only CH (for U8C) .106 2.69 U8C Only LH .010 .020 0.25 0.51 U8 Only LW1 .193 .203 4.90 5.16 LW2 .076 .086 1.93 2.19 LL1 .174 .184 4.42 4.67 LL2 .074 .084 1.88 2.13 LS1 0.150 BSC 3.81 BSC U8 Only LS2 0.075 BSC 1.91 BSC U8 O

16、nly Q1 .030 .040 0.76 1.02 Q2 .030 .040 0.76 1.02 TERM 1 Drain TERM 2 Gate TERM 3 Source NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The lid shall be electrically isolated from the drain, gate and source. 4. In accordance with ASME Y14.5M, diameters

17、are equivalent to x symbology. FIGURE 1. Physical dimensions for SMD-0.2, 2N7609U8 and 2N7609U8C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/758 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified

18、in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6

19、.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IASRated avalanche current, non-repetitive nC nano Coulomb. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be a

20、s specified in MIL-PRF-19500, and on figure 1 (SMD-0.2, U8 and U8C) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Inter

21、nal construction. Multiple chip construction is not be permitted to meet the requirements of this specification. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.5.1 Handling. Metal oxide semiconductor (MOS) devices must

22、be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices

23、. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rat

24、ed voltage to any lead. h. Gate must be terminated to source, R or 100 k, whenever bias voltage is applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electri

25、cal test requirements. The electrical test requirements shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking of the country of origin may be omitted from the body of the transistor but shall be retained on the in

26、itial container. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

27、 IHS-,-,-MIL-PRF-19500/758 5 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection

28、. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not r

29、equest the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.2.1.1 SEE. Design capability shall be tested on the initial qualification and

30、thereafter whenever a major die design or process change is introduced. Electrical measurements (end-points) shall be in accordance with table III. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/758 6 4.3 Screening (JANS and JANTXV). S

31、creening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) (1) (2

32、) JANS level JANTXV levels (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750, EAS(see 4.3.2) Method 3470 of MIL-STD-750, EAS(see 4.3.2) (3) 3c Method 3161 of MIL-STD-750, thermal impedance, (see 4.3.3) Method 3161 of MIL-STD-750, thermal impedance, (see 4.3

33、.3) 9 Subgroup 2 of table I herein, IGSSF1, IGSSR1, IDSS1as a minimum Not applicable 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(TH)1Subgroup 2 of table I herein IGSSF1= 20 nA dc or 100 percent of initial value,

34、 whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 1.0 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(TH)1Subgroup 2 of table I herein 12 Method 1042 of MIL-STD-750, test condition A Method 1042 of M

35、IL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 1.0 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 perc

36、ent of initial value VGS(th)1= 20 percent of initial value Subgroups 2 and 3 of table I herein IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 1.0 A dc or 100 percent of initial value, whichever is

37、 greater. rDS(on)1=20 percent of initial value VGS(th)1= 20 percent of initial value (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed anytime after tempe

38、rature cycling, screen 3a; and does not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/758 7 4.3.1 Gate stress test. Apply VGS= 15 V, minimum for t = 250 sec., minimum. 4.3.2 Single pulse

39、avalanche energy (EAS). a. Peak current IAS= ID1. b. Inductance . L = ( )212EIV VVASDBR DDBRmH minimum. c. Gate to source resistor RGS: . 25 RGS 200 . d. Supply voltage . VDD= 50 V dc maximum. e. Initial case temperature . TC= +25 C, -5 C, +10 C. f. Gate voltage, VGS= 5 V dc (up to rated VGS) g. Num

40、ber of pulses to be applied: . 1 pulse minimum. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) =

41、70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. 4.4.2 Group B inspectio

42、n. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B insp

43、ection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test condition G, 100 cycles. B3 2077 Scanning electron microscope (SEM) qualification may be performed anytime prior to lot formation. B4 1042 Intermittent operation life, condition D, 2,000 cycles. No heat sink or force

44、d-air cooling on the device shall be permitted during the on cycle. ton= 30 seconds minimum. B5 1042 Accelerated steady-state gate bias, condition B, VGS= rated; TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum. B5 1042 Accelerated steady-state reverse bias, condition A, VDS= rate

45、d; TA= +175C, t = 120 hours minimum; or TA= +150C, t = 240 hours minimum. B5 2037 Test condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/758 8 4.4.2.2 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Method

46、 Condition B2 1051 Test condition G, 25 cycles. B3 1042 Intermittent operation life, condition D, 2,000 cycles. No heat sink or forced-air cooling on the device shall be permitted during the on cycle. ton= 30 seconds minimum. 4.4.3 Group C inspection. Group C inspection shall be conducted in accorda

47、nce with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Terminal strength is not applicable. C5 3161 Thermal resistance, see 4

48、.5.2, RJC(max)= 5.4 C/W. C6 1042 Intermittent operation life, condition D, 6,000 cycles. No heat sink or forced-air cooling on the device shall be permitted during the on cycle. ton= 30 seconds minimum. 4.4.4 Group D inspection. Group D inspection shall be conducted in accordance with table E-VIII of MIL-PRF-19500 and table II herein. 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-points) shall be in acco