DLA MIL-PRF-19500 756-2010 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR N-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) LOGIC-LEVEL SILICON TYPES 2N7607T3 AND 2N.pdf

《DLA MIL-PRF-19500 756-2010 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR N-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) LOGIC-LEVEL SILICON TYPES 2N7607T3 AND 2N.pdf》由会员分享，可在线阅读，更多相关《DLA MIL-PRF-19500 756-2010 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR N-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) LOGIC-LEVEL SILICON TYPES 2N7607T3 AND 2N.pdf（20页珍藏版）》请在麦多课文档分享上搜索。

1、 MIL-PRF-19500/756 28 April 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7607T3 AND 2N7606U3 JANTXVR, JANTXVF, JANSR, AND JANSF This specification is approved for

2、use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement-mode, rad

3、iation hardened (total dose and single event effects (SEE), low-threshold logic level, MOSFET, transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). See 6.5 for JANH

4、C and JANKC die versions. 1.2 Physical dimensions. See figure 1, TO-257AA (T3) and figure 2, SMD.5 TO-276AA (U3). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type PT(1) TC=+25C PTTA=+25C RJC(2) VDSVGSID1 TC=+25C (3) (4) ID2 TC=+100C (3) (4) ISIDM (5) TJand TSTG2N7607T3 2N7606U3 W 75 5

5、7 W 1.56 1.00 C/W 1.67 2.20 V dc 60 60 V dc 10 10 A dc 20 22 A dc 20 20 A dc 20 22 A (pk) 80 88 C -55 to +150 (1) Derate linearly by 0.60 mW/C (T3) for TC +25C, 0.45mW/C (U3) for TC +25C. (2) See figure 3, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit: I

6、Dis limited by product design and does not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/756 8 4.3.1 Gate stress test. Apply VGS= 15 V minimum for t = 250 s minimum. 4.3.2 Single pulse av

7、alanche energy (EAS). a. Peak current (IAS) ID1. b. Peak gate voltage (VGS) 5 V dc (up to max rated VGS). c. Gate to source resistor (RGS) 25 RGS 200 . d. Initial case temperature +25C, +10C, -5C. e. Inductance: . ( )212EIV VVASDBR DDBRmH minimum. f. Number of pulses to be applied 1 pulse minimum. g

8、. Supply voltage (VDD) . 25 V dc (up to max VDS). 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD)

9、= 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for quality conformance inspection in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be co

10、nducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E

11、-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500, and herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table III herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-1

12、9500. Subgroup Method Condition B3 1051 Test condition G, 100 cycles. B5 1042 Accelerated steady-state gate bias, condition B, VGS= rated VGS; TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum. B5 1042 Accelerated steady-state reverse bias, condition A, VDS= rated VDS; TA= +175C, t

13、 = 120 hours minimum; or TA= +150C, t = 240 hours minimum. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/756 9 4.4.2.2 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition C, 25 c

14、ycles. B3 1042 Accelerated steady-state gate bias, condition B, VGS= rated VGS; TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum; and accelerated steady-state reverse bias, condition A, VDS= rated VDS; TA= +175C, t = 170 hours minimum; or TA= +150C, t = 340 hours minimum. 4.4.3 Gr

15、oup C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Test

16、 Condition A for 2N7607T3, not applicable to 2N7606U3. C5 3161 See 4.3.3, RJC= (see 1.3). C6 1042 Accelerated steady-state gate bias, condition B, VGS= rated VGS; TA= +175C, t = 48 hours minimum; or TA= +150C, t = 96 hours minimum. and accelerated steady-state reverse bias, condition A, VDS= rated V

17、DS; TA= +175C, t = 500 hours minimum; or TA= +150C, t = 1,000 hours minimum. 4.4.4 Group D inspection. Group D inspection shall be conducted in accordance with table E-VIII of MIL-PRF-19500 and table II herein. 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the co

18、nditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables an

19、d as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/756 10 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Sy

20、mbol Limits Unit Method Condition Min Max Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Thermal impedance 2/ 3161 See 4.3.3 ZJAC/W Breakdown voltage drain to source 3407 VGS= 0, ID= 250 A dc, bias condition C V(BR)DSS60 V dc Gate to source voltage (threshold) 3403 VDS VGS, ID= 250 A dc

21、 VGS(TH)11.0 2.0 V dc Gate current 3411 VGS= +10 V dc, bias condition C, VDS= 0 IGSSF1+100 nA dc Gate current 3411 VGS= -10 V dc, bias condition C, VDS= 0 IGSSR1-100 nA dc Drain current 3413 VGS= 0, bias condition C, VDS= 80% of rated VDSIDSS11.0 A dc Static drain to source on-state resistance 3421

22、VGS= 4.5 V dc, condition A, pulsed (see 4.5.1), ID= ID2rDS(ON)12N7607T3 0.045 2N7606U3 0.035 Forward voltage 4011 VGS= 0, condition A, pulsed (see 4.5.1), ID= ID1 VSD1.2 V (pk) Subgroup 3 High temperature operation: TC= TJ= +125C Gate current 3411 VGS= 10 V dc, bias condition C, VDS= 0 IGSS2200 nA d

23、c Drain current 3413 VGS= 0, bias condition C, VDS= 80% of rated VDS IDSS210 A dc Static drain to source on-state resistance 3421 VGS= 4.5 V dc, condition A, pulsed (see 4.5.1), ID= ID2rDS(ON)22N7607T3 0.070 2N7606U3 0.055 Gate to source voltage (threshold) 3403 VDS= VGS, ID= 250 A dc VGS(TH)20.5 V

24、dc Low temperature operation: TC= TJ= -55C Gate to source voltage (threshold) 3403 VDS VGS, ID= 250 A dc VGS(TH)32.5 V dc See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/756 11 TABLE I. Group A inspection

25、- Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Condition Min Max Subgroup 4 Forward transconductance 3475 VDS= 10 V dc, ID= ID2, pulsed (see 4.5.1) gFS2N7607T3 19 S 2N7606U3 24 S Gate Series Resistance 3402 Condition A. RG2.5 Subgroup 5 Safe operating area test 3474 VDS= 80 percent

26、 of rated VDS(see 1.3), tP= 10 ms, IDas specified in figure. 5 Electrical measurements See table I, subgroup 2 Subgroups 6 Not applicable Subgroup 7 Gate charge 3471 Condition B, ID= ID1On-state gate charge QG(on)34 nC On Gate to source charge QGS18 nC On Gate to drain charge QGD113 nC Turn-off gate

27、 charge QG(off)34 nC Off Gate to source charge QGS28 nC Off Gate to drain charge QGD213 nC Reverse recovery time 3473 di/dt = -100 A/s, VDD 50 V, ID= ID1trr 200 ns Subgroups 7 Not applicable 1/ For sampling plan, see MIL-PRF-19500. 2/ This test required for the following end-point measurements only:

28、 Group B, subgroups 3 and 4 (JANS). Group B, subgroups 2 and 3 (JANTXV). Group C, subgroup 2 and 6. Group E, subgroup 1. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/756 12 TABLE II. Group D inspection. Inspection MIL-STD-750 Symbol

29、Pre-irradiation limits Post-irradiation limits Post-irradiation limits Unit 1/ 2/ 3/ R VDS= 0 Steady-state total dose irradiation (VDSbias) 4/ 1019 VGS= 0; VDS= 80 percent of rated VDS (preirradiation) End-point electricals: Breakdown voltage, drain to source 3407 VGS= 0; ID= 250 A; bias condition C

30、 V(BR)DSS60 60 60 V dc Gate to source voltage (threshold) 3403 VDS VGSID= 250 A VGS(th)11.0 2.0 1.0 2.0 1.0 2.0 V dc Gate current 3411 VGS= +10 V, VDS= 0, bias condition C IGSSF1100 100 100 nA dc Gate current 3411 VGS= -10 V, VDS= 0, bias condition C IGSSR1-100 -100 -100 nA dc Drain current 3413 VGS

31、= 0, bias condition C VDS= 80 percent of rated VDS(preirradiation) IDSS1.0 1.0 1.0 A dc Static drain to source on-state voltage 2N7607T3 2N7606U3 3405 VGS= 4.5 V; condition A, pulsed (see 4.5.1), ID1= ID2VDS(on)0.900 0.600 0.900 0.600 0.900 0.600 V dc V dc Forward voltage source drain diode 4011 VGS

32、 = 0; ID= ID1bias condition C VSD1.2 1.2 1.2 V dc 1/ For sampling plan see MIL-PRF-19500. 2/ Group D qualification may be performed prior to lot formation. Wafers qualified to these group D QCI requirements may be used for any other specification sheets utilizing the same die design. 3/ At the manuf

33、acturers option, group D samples need not be subjected to the screening tests, and may be assembled in its qualified package or in any qualified package that the manufacturer has data to correlate the performance to the designated package. 4/ Separate samples shall be pulled for each bias. Provided

34、by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/756 13 TABLE II. Group E inspection (all quality levels) - for qualification or re-qualification only. Inspection MIL-STD-750 Sample Method Conditions plan Subgroup 1 Temperature cycling 1051 Condi

35、tion G, 500 cycles 45 devices c = 0 Hermetic seal Fine leak Gross leak Electrical measurements 1071 As applicable See table I, subgroup 2 Subgroup 2 1/ Steady-state gate bias Electrical measurements 1042 Condition B, 1,000 hours See table I, subgroup 2 45 devices c = 0 Steady-state reverse bias Elec

36、trical measurements 1042 Condition A, 1,000 hours See table I, subgroup 2 Subgroup 3 Switching time test 3472 ID= ID1, VGS= 5.0 V dc, RG= 7.5, VDD=50% rated VDSMaximum Limits: td(on) = 30 ns; tr = 7 ns; td(off) = 60 ns; tf = 20 ns n = 45, c = 0 Subgroup 4 Thermal impedance curves 3161 See MIL-PRF-19

37、500. Sample size N/A Subgroup 5 Not applicable Subgroup 10 Commutating diode for safe operating area test procedure for measuring dv/dt during reverse recovery of power MOSFET transistors or insulated gate bipolar transistors 3476 Test conditions shall be derived by the manufacturer. 22 devices c =

38、0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/756 14 TABLE III. Group E inspection (all quality levels) for qualification or re-qualification only - Continued. MIL-STD-750 Sample Inspection Method Cond

39、itions plan Subgroup 11 3 devices SEE 2/ 3/ 4/ 1080 See figure 6 Electrical measurements 5/ IGSSF1, IGSSR1, and IDSS1in accordance with table I, subgroup 2 SEE irradiation Fluence = 3E5 20 percent ions/cm2, flux = 2E3 to 2E4 ions/cm2/sec, temperature = 25 5C Surface LET = 38 MeV-cm2/mg 5.0%, range =

40、 38 m 7.5%, energy = 300 MeV 7.5% In situ bias conditions: VDS= 60 V and VGS= -6 V (nominal 3.86 MeV/nucleon at Brookhaven National Lab Accelerator) Surface LET = 62 MeV-cm2/mg 5.0%), range = 33 m 7.5%, energy = 355 MeV 7.5% In situ bias conditions: VDS= 60 V and VGS= -5 V (nominal 2.92 MeV/nucleon

41、at Brookhaven National Lab Accelerator) Surface LET = 85 MeV-cm2/mg 5%, range = 29 m 7.5%, energy = 380 MeV 10% In situ bias conditions: VDS= 60 V and VGS= -4 V (nominal 1.98 MeV/nucleon at Brookhaven National Lab Accelerator) Electrical measurements 5/ IGSSF1, IGSSR1, and IDSS1in accordance with ta

42、ble I, subgroup 2 1/ A separate sample for each test shall be pulled. 2/ Group E qualification of SEE effect testing may be performed prior to lot formation. Qualification may be extended to other specification sheets utilizing the same structurally identical die design. 3/ Device qualification to a

43、 higher level LET is sufficient to qualify all lower level LETs. 4/ The sampling plan applies to each bias condition. 5/ Examine IGSSF1, IGSSR1, and IDSS1before and following SEE irradiation to determine acceptability for each bias condition. Other test conditions in accordance with table I, subgrou

44、p 2, may be performed at the manufacturers option. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/756 15 2N7607T3 2N7606U3 FIGURE 3. Thermal impedance graph. Thermal Impedance0.0010.010.11100.000001 0.00001 0.0001 0.001 0.01 0.1Pulse-W

45、idth tP(sec.)ThermalImpedance ZthJC(C/W)D=0.50D=0.20D=0.10D=0.05D=0.02D=0.01Single PulseProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/756 16 2N7607T3 2N7606U3 FIGURE 4. Maximum drain current vs case temperature graphs. Maximum Current

46、 Rating0510152025303525 50 75 100 125 150TC, Case Temperature (C)ID, DrainCurrent(Amps.)Maximum Current Rating051015202525 50 75 100 125 150TC, Case Temperature (C)ID, DrainCurrent(Amps.)Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/7

47、56 17 2N7607T3 2N7606U3 FIGURE 5. Safe-operating-area graph 0.11.010.0100.01 10 100VDS, Drain-to-Source Voltage (V)ID,DrainCurrent(A)Operation in this area limited by RDS(on)100s1ms10msTC = 25oCTJ = 150oCSingle Pulse0.11.010.0100.01 10 100VDS, Drain-to-Source Voltage (V)ID,DrainCurrent(A)Operation i

48、n this area limited by RDS(on)100s1ms10msTC = 25oCTJ = 150oCSingle PulseProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/756 18 FIGURE 6. Single-Event-Effects safe-operating-area graph Typical Single-Event-Effects RESPONSE010203040506070-7-6-5-4-3-2-10Bias VGS (Volts)BiasVDS (Volts)LET=385%; 38m7.5%; 300MeV7.5%LET=625%; 33m7.5%; 355MeV7.5%LET=855%; 29m7.5%;