DLA MIL-PRF-19500 731 A-2010 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY DUAL CENTER TAP TYPES 1N7058CCU3 1N7058CCU3C AND SINGLE DIE TYPE 1N7038U3 JAN JANTX JANTXV AND JANS.pdf

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1、 MIL-PRF-19500/731A 5 February 2010 SUPERSEDING MIL-PRF-19500/731 26 March 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPES 1N7058CCU3, 1N7058CCU3C, AND SINGLE DIE, TYPE 1N7038U3, JAN, JANTX, JANTXV, AND JANS This specification is approve

2、d for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist ofthis specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, Schottky dual and si

3、ngle power rectifier diodes for use in high frequency switching power supplies and resonant power converters. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. * 1.2 Physical dimensions. See figure 1, U3 and U3C (with ceramic lid) package. * 1.3 Maximu

4、m ratings. Unless otherwise specified, TA= +25C. Column 1 Column 2 Column 3 Column 4 Column 5 Column 6 Types VRWMIO(1)(2) TC = +100C IFSMtp= 8.3 ms TC= +25C RJC (2) RJC(3) TSTGand TJV dc A dc A (pk) C/W C/W C 1N7038U3 150 30 140 (2) 1.82 -65 to +150 1N7058CCU3 1N7058CCU3C 150 30 130 (2) 1.75 3.5 (1)

5、 See temperature-current derating curves in figures 2 and 3. (2) Entire package. (3) Each leg. * 1.4 Primary electrical characteristics. a. RJC= 1.82C/W maximum for 1N7038U3 (figure 4). b. RJC= 1.75C/W maximum entire package for 1N7058CCU3 and 1N7058CCU3C (figure 5); RJC= 3.5C/W maximum each leg. AM

6、SC N/A FSC 5961INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to semiconductordscc.dla.mil . Since contact information can change, you may want to verify the cu

7、rrency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 May 2010. Provided by IHSNot for ResaleNo reproduction or networking permitted without

8、license from IHS-,-,-MIL-PRF-19500/731A 2 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Dimensions are in accordance with ASME Y14.5M. 4. Suffix “U3C” indicates a ceramic lid on package. * FIGURE 1. Dimensions and configuration, 1N7038U3, 1N7058CCU3, a

9、nd 1N7058CCU3C. Ltr Dimensions Note Inches Millimeters Min Max Min Max BL .395 .405 10.03 10.29 BW .291 .301 7.39 7.65 CH .108 .122 2.74 3.12 U3 Only CH .1195 .1335 3.035 3.39 U3C Only LH .010 .020 0.25 0.51 LL1 .220 .230 5.59 5.84 LL2 .115 .125 2.92 3.18 LS1 .150 BSC 3.81 BSC LS2 .075 BSC 1.91 BSC

10、LW1 .281 .291 7.14 7.39 LW2 .090 .100 2.29 2.54 Q1 .030 0.76 Q2 .030 0.76 1N7058CCU3 1N7058CCU3C 1N7038U3 2,3 1 U3 1 3 2 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/731A 3 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in

11、 this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document

12、 users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

13、 part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL

14、-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of p

15、recedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemp

16、tion has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying ac

17、tivity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interfa

18、ce and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 herein. 3.4.1 Polarity. Polarity and terminal configuration shall be in accordance with figure 1 herein. 3.4.2 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein. Whe

19、re a choice of finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements.

20、 The electrical test requirements shall be as specified in tables I and II herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500 and herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects th

21、at will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/731A 4 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qua

22、lification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II herein). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be

23、performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

24、the first inspection lot of this revision to maintain qualification. * 4.3 Screening (JANS, JANTXV, and JANTX levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that e

25、xceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1)(2) 3b Method 4066 of MIL-STD-750, condition A, one pulse, IO= 0, VRWM= 0, see 1.3 herein, column 4. Method 4066 of MIL-STD-750, condition A, one pul

26、se, IO= 0, VRWM= 0, see 1.3 herein, column 4. (2) 3c Thermal impedance (see 4.3.2) Thermal impedance (see 4.3.2) 3d Avalanche energy test (see 4.3.3) Avalanche energy test (see 4.3.3) 9, 10 Not applicable Not applicable 11 VF1and IR1VF1and IR112 See 4.3.1 See 4.3.1 13 Subgroup 2 and 3, of table I he

27、rein, VF1and IR1, excluding thermal impedance; VF1= 50 mV (pk); IR1= 100 percent from the initial value or 100uA, whichever is greater. Subgroup 2, of table I herein excluding thermal impedance; VF1and IR1; VF1= 50 mV (pk); IR1= 100 percent from the initial value or 100uA, whichever is greater. (1)

28、Surge shall precede thermal impedance. (2) Thermal impedance and surge shall be performed any time after screen 3a and before screen 13. * 4.3.1 Power burn-in conditions. Burn-in conditions are as follows: Method 1038 of MIL-STD-750, test condition A. VR= 120 V dc; TJ= +125C. 4.3.2 Thermal impedance

29、. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD. Measurement delay time (tMD) = 70 s max. See table III, subgroup 4 herein. * 4.3.3 Avalanche energy test. The avalanche e

30、nergy test is to be performed in accordance with method 4064 of MIL-STD-750 using the circuit as shown on figure 6 or equivalent. The Schottky rectifier under test must be capable of absorbing the reverse energy, as follows: IRM= 170 mA, VRSM= 150 V minimum, L = 150 mH. Provided by IHSNot for Resale

31、No reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/731A 5 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500, and t

32、able I herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table II herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables E-VIa (JANS) and

33、E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward voltage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in accordance with table II herein. * 4.4.2.1 Group B in

34、spection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 TC= +85C, IF= 2 A minimum for 2,000 cycles. B5 1038 Condition A, VR = 120 V dc, TJ= +125C, t = 340 hours min; heat sinking allowed. This test shall be extended to 1000 on each JANS wafer lot. B6 4081 Limit for thermal r

35、esistance for 1N7038U3 is 1.82C/W. Limit for thermal resistance for 1N7058CCU3 is 3.5C/W for each diode. Limit for thermal resistance for 1N7058CCU3C is 3.5C/W for each diode. * 4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 TC= +

36、85C, IF= 2 A minimum for 2,000 cycles. * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2, forward vol

37、tage test (VF1) and reverse leakage test (IR1) herein. Delta measurements shall be in accordance with table II herein. Subgroup Method Condition C2 2036 Not required C6 1037 TC = +85C, IF= 2 A minimum for 6,000 cycles. C6 1038 Condition A, VR = 120Vdc, TJ= +125C, t = 1000 hours minimum; (heat sinkin

38、g allowed), for TX, TXV only. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-IX of MIL-PRF-19500, and table III herein. Delta measurements shall be in accordance with table II herein. 4.5 Methods o

39、f inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-

40、,-,-MIL-PRF-19500/731A 6 * TABLE I. Group A inspection. Inspection 1/ 2/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 3101 See 4.3.2 ZJCC/W Forward voltage 4011 Pulsed test (see 4.5.1) VF11N7038U3 IF= 15A (pk)

41、 .96 V dc 1N7058CCU3 1N7058CCU3C IF= 7.5A (pk) IF= 7.5A (pk) 1.05 1.05 V dc V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF21N7038U3 IF= 30 A (pk) 1.18 V dc 1N7058CCU3 1N7058CCU3C IF= 15 A (pk) IF= 15 A (pk) 1.20 1.20 V dc V dc Reverse current 4016 DC method IR11N7038U3 VR= 150 V .12 mA dc 1N70

42、58CCU3 1N7058CCU3C VR= 150 V VR= 150 V .02 .02 mA dc mA dc Subgroup 3 High temperature operation: TC= +125 C Forward voltage Pulsed test (see 4.5.1) VF31N7038U3 IF= 15A (pk) .75 V dc 1N7058CCU3 IF= 7.5A (pk) .72 V dc 1N7058CCU3C IF= 7.5A (pk) .72 V dc Forward voltage Pulsed test (see 4.5.1) VF41N703

43、8U3 IF= 30 A (pk) .92 V dc 1N7058CCU3 1N7058CCU3C IF= 15 A (pk) IF= 15 A (pk) .85 .85 V dc V dc Reverse current 4016 DC method; IR21N7038U3 VR= 150 V 6.0 mA dc 1N7058CCU3 1N7058CCU3C VR= 150 V VR= 150 V 7.0 7.0 mA dc mA dc See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction o

44、r networking permitted without license from IHS-,-,-MIL-PRF-19500/731A 7 TABLE I. Group A inspection Continued. Inspection 1/ 2/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 3 - continued Low temperature operation: TC= -55C 1N7038U3 IF= 15A (pk) 1.07 V dc 1N7058CCU3 1N7058CCU3C

45、IF= 7.5A (pk) IF= 7.5A (pk) 1.06 1.06 V dc V dc Forward voltage 4011 Pulsed test (see 4.5.1) VF6 1N7038U3 IF= 30 A (pk) 1.26 V dc 1N7058CCU3 1N7058CCU3C IF= 15 A (pk) IF= 15 A (pk) 1.23 1.23 V dc V dc Subgroup 4 Junction capacitance 4001 VR= 5 V dc, f = 1 MHz, VSIG= 50 mV (p-p) CJ1N7038U3 340 pF 1N7

46、058CCU3 1N7058CCU3C 130 130 pF pF Subgroup 5 Not applicable Subgroup 6 Surge 4066 See 1.3, column 4 herein, ten surges each diode. 60 seconds between surges, (see 4.5.1). Electrical measurements See table I, subgroup 2 herein. Subgroup 7 Dielectric withstanding voltage 3/ 1016 VR= 500 V dc; all lead

47、s shorted; measure from leads to case. DWV 10 A Scope display evaluation 4023 Stable only. Electrical measurements See table I, subgroup 2 herein. 1/ For sampling plan, see MIL-PRF-19500. 2/ Electrical characteristics apply to all package styles and polarities. 3/ Not required for 1N7058CCU3C. Provi

48、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/731A 8 * TABLE II. Groups B, C, and E delta requirements. 1/ 2/ 3/ 4/ 5/ 6/ Step Inspection MIL-STD-750 Symbol Limits Unit Method Conditions Min Max 1. Forward voltage 1N7038U3 4011 IF= 15 A (p

49、k) pulsed (see 4.5.1) VF150 mV dc from initial reading. 1N7058CCU3 1N7058CCU3C IF= 7.5 A (pk) pulsed (see 4.5.1) 2. Reverse current 4016 VR= 150V IR1100 pecent from initial reading or 100uA whichever is greater. 3. Thermal impedance 3101 See 4.3.2 ZJX1/ Each individual diode. 2/ The electrical measurements for tabl