DLA MIL-PRF-19500 727 B-2010 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON SWITCHING TYPES 2N5010 THROUGH 2N5015 2N5010S THROUGH 2N5015S 2N5010U4 THROUGH 2N5015U4 JAN JANTX JANTXV AN.pdf
《DLA MIL-PRF-19500 727 B-2010 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON SWITCHING TYPES 2N5010 THROUGH 2N5015 2N5010S THROUGH 2N5015S 2N5010U4 THROUGH 2N5015U4 JAN JANTX JANTXV AN.pdf》由会员分享,可在线阅读,更多相关《DLA MIL-PRF-19500 727 B-2010 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON SWITCHING TYPES 2N5010 THROUGH 2N5015 2N5010S THROUGH 2N5015S 2N5010U4 THROUGH 2N5015U4 JAN JANTX JANTXV AN.pdf(22页珍藏版)》请在麦多课文档分享上搜索。
1、 MIL-PRF-19500/727B 21 January 2010 SUPERSEDING MIL-PRF-19500/727A 15 April 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N5010 THROUGH 2N5015, 2N5010S THROUGH 2N5015S, 2N5010U4 THROUGH 2N5015U4, JAN, JANTX, JANTXV, AND JANS This specification
2、 is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, tra
3、nsistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-5 and TO-39), and 2 (U4). * 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Types ICIBVCBOVCERVEBOTJand TSTG(1) mA dc mA dc V
4、dc V dc V dc C 2N5010, 2N5010S, U4 200 20 500 500 5 -65 to +200 2N5011, 2N5011S, U4 200 20 600 600 5 -65 to +200 2N5012, 2N5012S, U4 200 20 700 700 5 -65 to +200 2N5013, 2N5013S, U4 200 20 800 800 5 -65 to +200 2N5014, 2N5014S, U4 200 20 900 900 5 -65 to +200 2N5015, 2N5015S, U4 200 20 1000 1000 5 -
5、65 to +200 Types PTTA= +25C (2) (3) PTTC= +25C (2) (3) RJA(3) (4) RJC(3) (4) W W C/W C/W 2N5010 through 2N5015 and 2N5010S through 2N5015S 1 7 175 20 2N5010U4 through 2N5015U4 1 7 175 7 (1) For derating, see figures 3, 4, and 5. (2) See figure 5 for special bias considerations under ambient operatio
6、n. (3) For thermal impedance curves, see figures 6, 7, 8, and 9. (4) TA= 25C for (U4) on printed circuit board (PCB), PCB = FR4 .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, still air, pads (U4) = .067 x .065 inch (1.7 x 1.65 mm) for the two smaller pads and .165 x .135 inch (4.19 x 3.43 mm) for
7、 the larger collector pad; RJAwith a defined PCB thermal resistance condition included. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Se
8、miconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed
9、by 21 April 2010. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/727B 2 * 1.4 Primary electrical characteristics at TA= +25C. Unless otherwise specified, TA= +25C. Types hFEat VCE= 10 V dc VCE(sat)1(1) IC= 25 mA dc IB= 5 mA dc VBE(sat)
10、1(1) IC= 25 mA dc IB= 5 mA dc /hfe/ f = 10 MHz Cobo100 kHz f 2 MHz hFE1IC= 25 mA dc hFE2IC= 5 mA dc VCE= 10 V dc IC= 25 mA dc VCB= 10 V dc IE= 0 min max min max V dc V dc pF 2N5010, 2N5010S U4 30 180 10 1.4 1 1 30 2N5011, 2N5011S, U4 30 180 10 1.5 1 1 30 2N5012, 2N5012S, U4 30 180 10 1.6 1 1 30 Type
11、s hFEat VCE= 10 V dc VCE(sat)1(1) IC= 20 mA dc IB= 5 mA dc VBE(sat)1(1) IC= 20 mA dc IB= 5 mA dc /hfe/ f = 10 MHz Cobo100 kHz f 2 MHz hFE1IC= 20 mA dc hFE2IC= 5 mA dc VCE= 10 V dc IC= 20 mA dc VCB= 10 V dc IE= 0 min max min max V dc V dc pF 2N5013, 2N5013S U4 30 180 10 1.6 1 1 30 2N5014, 2N5014S, U4
12、 30 180 10 1.6 1 1 30 2N5015, 2N5015S, U4 30 180 10 1.8 1 1 30 (1) Pulsed see 4.5.1. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/727B 3 Dimensions Symbol Inches Millimeters Note Min Max Min Max CD .305 .335 7.75 8.51 6 CH .240 .260
13、6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP 7 LD .016 .019 0.41 0.48 8,9 LL See note 14 LU .016 .019 0.41 0.48 8,9 L1.050 1.27 8,9 L2.250 6.35 8,9 P .100 2.54 7 Q .030 0.76 5 TL .029 .045 0.74 1.14 3,4 TW .028 .034 0.71 0.86 3 r .010 0.25 10 45 TP 45 TP 7 1, 2, 10, 12, 13, 14 NOTES: 1. Dimen
14、sions are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. CD shall not vary more than .
15、010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The devic
16、e may be measured by direct methods or by gauging procedure. 8. Dimension LU applies between L1and L2. Dimension LD applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 9. All three leads. 10. The collector shall be internally connected to the case. 11. Dimension r
17、(radius) applies to both inside corners of tab. 12. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. For non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For S-s
18、uffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max. FIGURE 1. Physical dimensions (TO-5 and TO-39). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/727B 4 Symbol Dimensions Inches Millimeters Min Ma
19、x Min Max BL .215 .225 5.46 5.72 BW .145 .155 3.68 3.94 CH .049 .075 1.24 1.91 LH .02 0.51 LW1 .135 .145 3.43 3.68 LW2 .047 .057 1.19 1.45 LL1 .085 .125 2.16 3.17 LL2 .045 .075 1.14 1.9 LS1 .070 .095 1.78 2.41 LS2 .035 .048 0.89 1.21 Q1 .03 .070 0.76 1.78 Q2 .02 .035 0.51 0.89 TERM 1 Collector TERM
20、2 Base TERM 3 Emitter NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2. Physical dimensions, surface mount (U4 version). 1 Provided by IHSNot for ResaleNo repro
21、duction or networking permitted without license from IHS-,-,-MIL-PRF-19500/727B 5 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specificatio
22、n or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are l
23、isted. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contra
24、ct. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assis
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