DLA MIL-PRF-19500 727 B-2010 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON SWITCHING TYPES 2N5010 THROUGH 2N5015 2N5010S THROUGH 2N5015S 2N5010U4 THROUGH 2N5015U4 JAN JANTX JANTXV AN.pdf

《DLA MIL-PRF-19500 727 B-2010 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON SWITCHING TYPES 2N5010 THROUGH 2N5015 2N5010S THROUGH 2N5015S 2N5010U4 THROUGH 2N5015U4 JAN JANTX JANTXV AN.pdf》由会员分享，可在线阅读，更多相关《DLA MIL-PRF-19500 727 B-2010 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON SWITCHING TYPES 2N5010 THROUGH 2N5015 2N5010S THROUGH 2N5015S 2N5010U4 THROUGH 2N5015U4 JAN JANTX JANTXV AN.pdf（22页珍藏版）》请在麦多课文档分享上搜索。

1、 MIL-PRF-19500/727B 21 January 2010 SUPERSEDING MIL-PRF-19500/727A 15 April 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N5010 THROUGH 2N5015, 2N5010S THROUGH 2N5015S, 2N5010U4 THROUGH 2N5015U4, JAN, JANTX, JANTXV, AND JANS This specification

2、 is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, tra

3、nsistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-5 and TO-39), and 2 (U4). * 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Types ICIBVCBOVCERVEBOTJand TSTG(1) mA dc mA dc V

4、dc V dc V dc C 2N5010, 2N5010S, U4 200 20 500 500 5 -65 to +200 2N5011, 2N5011S, U4 200 20 600 600 5 -65 to +200 2N5012, 2N5012S, U4 200 20 700 700 5 -65 to +200 2N5013, 2N5013S, U4 200 20 800 800 5 -65 to +200 2N5014, 2N5014S, U4 200 20 900 900 5 -65 to +200 2N5015, 2N5015S, U4 200 20 1000 1000 5 -

5、65 to +200 Types PTTA= +25C (2) (3) PTTC= +25C (2) (3) RJA(3) (4) RJC(3) (4) W W C/W C/W 2N5010 through 2N5015 and 2N5010S through 2N5015S 1 7 175 20 2N5010U4 through 2N5015U4 1 7 175 7 (1) For derating, see figures 3, 4, and 5. (2) See figure 5 for special bias considerations under ambient operatio

6、n. (3) For thermal impedance curves, see figures 6, 7, 8, and 9. (4) TA= 25C for (U4) on printed circuit board (PCB), PCB = FR4 .0625 inch (1.59 mm) 1-layer 1-Oz Cu, horizontal, still air, pads (U4) = .067 x .065 inch (1.7 x 1.65 mm) for the two smaller pads and .165 x .135 inch (4.19 x 3.43 mm) for

7、 the larger collector pad; RJAwith a defined PCB thermal resistance condition included. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Se

8、miconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed

9、by 21 April 2010. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/727B 2 * 1.4 Primary electrical characteristics at TA= +25C. Unless otherwise specified, TA= +25C. Types hFEat VCE= 10 V dc VCE(sat)1(1) IC= 25 mA dc IB= 5 mA dc VBE(sat)

10、1(1) IC= 25 mA dc IB= 5 mA dc /hfe/ f = 10 MHz Cobo100 kHz f 2 MHz hFE1IC= 25 mA dc hFE2IC= 5 mA dc VCE= 10 V dc IC= 25 mA dc VCB= 10 V dc IE= 0 min max min max V dc V dc pF 2N5010, 2N5010S U4 30 180 10 1.4 1 1 30 2N5011, 2N5011S, U4 30 180 10 1.5 1 1 30 2N5012, 2N5012S, U4 30 180 10 1.6 1 1 30 Type

11、s hFEat VCE= 10 V dc VCE(sat)1(1) IC= 20 mA dc IB= 5 mA dc VBE(sat)1(1) IC= 20 mA dc IB= 5 mA dc /hfe/ f = 10 MHz Cobo100 kHz f 2 MHz hFE1IC= 20 mA dc hFE2IC= 5 mA dc VCE= 10 V dc IC= 20 mA dc VCB= 10 V dc IE= 0 min max min max V dc V dc pF 2N5013, 2N5013S U4 30 180 10 1.6 1 1 30 2N5014, 2N5014S, U4

12、 30 180 10 1.6 1 1 30 2N5015, 2N5015S, U4 30 180 10 1.8 1 1 30 (1) Pulsed see 4.5.1. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/727B 3 Dimensions Symbol Inches Millimeters Note Min Max Min Max CD .305 .335 7.75 8.51 6 CH .240 .260

13、6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP 7 LD .016 .019 0.41 0.48 8,9 LL See note 14 LU .016 .019 0.41 0.48 8,9 L1.050 1.27 8,9 L2.250 6.35 8,9 P .100 2.54 7 Q .030 0.76 5 TL .029 .045 0.74 1.14 3,4 TW .028 .034 0.71 0.86 3 r .010 0.25 10 45 TP 45 TP 7 1, 2, 10, 12, 13, 14 NOTES: 1. Dimen

14、sions are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. CD shall not vary more than .

15、010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The devic

16、e may be measured by direct methods or by gauging procedure. 8. Dimension LU applies between L1and L2. Dimension LD applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 9. All three leads. 10. The collector shall be internally connected to the case. 11. Dimension r

17、(radius) applies to both inside corners of tab. 12. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. For non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For S-s

18、uffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max. FIGURE 1. Physical dimensions (TO-5 and TO-39). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/727B 4 Symbol Dimensions Inches Millimeters Min Ma

19、x Min Max BL .215 .225 5.46 5.72 BW .145 .155 3.68 3.94 CH .049 .075 1.24 1.91 LH .02 0.51 LW1 .135 .145 3.43 3.68 LW2 .047 .057 1.19 1.45 LL1 .085 .125 2.16 3.17 LL2 .045 .075 1.14 1.9 LS1 .070 .095 1.78 2.41 LS2 .035 .048 0.89 1.21 Q1 .03 .070 0.76 1.78 Q2 .02 .035 0.51 0.89 TERM 1 Collector TERM

20、2 Base TERM 3 Emitter NOTES: 1. Dimensions are in inches. 2. Millimeter equivalents are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 2. Physical dimensions, surface mount (U4 version). 1 Provided by IHSNot for ResaleNo repro

21、duction or networking permitted without license from IHS-,-,-MIL-PRF-19500/727B 5 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specificatio

22、n or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are l

23、isted. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contra

24、ct. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assis

25、t.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the

26、 text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Quali

27、fication. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbrev

28、iations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figures 1 and 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitte

29、d without license from IHS-,-,-MIL-PRF-19500/727B 6 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characte

30、ristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in paragraph 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I herein. 3.7 Marking. Marking shall be in accordance with MIL

31、-PRF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herei

32、n are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification.

33、Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revis

34、ion shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/727B 7 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance

35、with table E-IV MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see E-table IV of Measurement MIL-PRF-19500) JANS level JANTX and JANTXV levels 2 Opti

36、onal Optional 3a Required Required 3b Not applicable Not applicable 3c Thermal impedance (transient), method 3131 of MIL-STD-750 (1) Thermal impedance (transient), method 3131 of MIL-STD-750 (1) 4 Required Optional 5 Required Not applicable 8 Required Not required 9 ICBO1, hFE1Not applicable 10 48 h

37、ours minimum 48 hours minimum 11 ICBO1; hFE1; ICBO1= 100 percent of initial value or 5 nA dc, whichever is greater. hFE1= 15 percent ICBO1; hFE112 See 4.3.1 See 4.3.1 13 Subgroups 2 and 3 of table I herein; ICBO1= 100 percent of initial value or 5 nA dc, whichever is greater; hFE1= 15 percent Subgro

38、up 2 of table I herein; ICBO1= 100 percent of initial value or 5 nA dc, whichever is greater; hFE1= 15 percent 15 Required Not required 16 Required Not required (1) Shall be performed any time after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Pow

39、er burn-in conditions. Power burn-in conditions are as follows: VCB= 10 - 30 V dc. Power shall be applied to achieve TJ= +135C minimum using a minimum PD= 75 percent of PTmaximum, rated as defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (ho

40、urs, bias conditions, TJ, mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential criteria for burn-in modification approval. Use method 31

41、00 of MIL-STD-750 to measure TJ. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/727B 8 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in

42、 that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. If alternate screening is

43、 being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table E-VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2).

44、4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and

45、4.4.2.1. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with table I, subgroup

46、 2. * 4.4.2.1 Group B inspection (JANS), table E-VIa of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB 10 V dc. B5 1027 VCB= 10 V dc; PD 100 percent of maximum rated PT(see 1.3). (NOTE: If a failure occurs, resubmission shall be at the test conditions of the original sample.) Option 1: 96 hour

47、s minimum sample size in accordance with table E-Via of MIL-PRF-19500, adjust TAor PDto achieve TJ= +275C minimum. Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TAor PDto achieve a TJ= +225C minimum. 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used fo

48、r each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic failures during CI shall be analyzed to the extent possible to identify root cause and corrective action. Whenever a failure is identified as wafer lot or wafer proce

49、ssing related, the entire wafer lot and related devices assembled from the wafer lot shall be rejected unless an appropriate determined corrective action to eliminate the failure mode has been implemented and the devices from the wafer lot are screened to eliminate the failure mode. Step Method Condition 1 1026 Steady-state life: 1,000 hours minimum