DLA MIL-PRF-19500 722 C-2013 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY RECTIFIER TYPES 1N6902UTK3 1N6903UTK3 1N6904UTK3 1N6905UTK3 1N6902UTK3CS 1N6903UTK3CS 1N6904UTK3CS 1N6905UT1.pdf

《DLA MIL-PRF-19500 722 C-2013 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY RECTIFIER TYPES 1N6902UTK3 1N6903UTK3 1N6904UTK3 1N6905UTK3 1N6902UTK3CS 1N6903UTK3CS 1N6904UTK3CS 1N6905UT1.pdf》由会员分享，可在线阅读，更多相关《DLA MIL-PRF-19500 722 C-2013 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY RECTIFIER TYPES 1N6902UTK3 1N6903UTK3 1N6904UTK3 1N6905UTK3 1N6902UTK3CS 1N6903UTK3CS 1N6904UTK3CS 1N6905UT1.pdf（12页珍藏版）》请在麦多课文档分享上搜索。

1、 MIL-PRF-19500/722C 19 November 2013 SUPERSEDING MIL-PRF-19500/722B 28 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6902UTK3, 1N6903UTK3, 1N6904UTK3, 1N6905UTK3, 1N6902UTK3CS, 1N6903UTK3CS, 1N6904UTK3CS, 1N6905UTK3CS, 1N6902UTK3AS, 1

2、N6903UTK3AS, 1N6904UTK3AS AND 1N6905UTK3AS, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1

3、.1 Scope. This specification covers the performance requirements for silicon, Schottky power surface mount rectifier diodes in a low profile package. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1. 1.3 Maximum

4、ratings. Unless otherwise specified TC= +25C. Column 1 Column 2 Column 3 Column 4 Column 5 Column 6 Column 7 Types VRWMIOTC= +100C IFSM tp= 8.3 ms TC= +25C RJC (junction to cathode side) RJC (junction to anode side) TSTG and TJV dc A dc A (pk) C/W C/W C 1N6902UTK3, CS, AS 45 150 2000 .25 .35 -65 to

5、+175 1N6903UTK3, CS, AS 60 150 2000 .25 .35 1N6904UTK3, CS, AS 80 150 2000 .25 .35 1N6905UTK3, CS, AS 100 150 2000 .25 .35 AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-39

6、90, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be

7、completed by 19 February 2014. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/722C 2 1.4 Primary electrical characteristics. Unless otherwise specified, TC= +25C. Column 1 Column 2 Column 3 Column 4 Column 5 Types VFMaximum forward vol

8、tage at TC= +25C V dc at IFVFMaximum forward voltage TC= +125C V dc at IFIRMaximum reverse current (see column 2) mA at VRWMCJMaximum junction capacitance f = 1MHz VR= 5 VDC 75A 150A 150A TJ= +25C TJ= +125C pF 1N6902UTK3, CS, AS .65 .78 .73 5.0 15 6,300 1N6903UTK3, CS, AS .71 .82 .74 5.0 35 5,500 1N

9、6904UTK3, CS, AS .79 .88 .76 5.0 35 5,000 1N6905UTK3, CS, AS .87 .94 .78 5.0 35 4,500 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specific

10、ation or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they a

11、re listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or co

12、ntract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mi

13、l/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this

14、 document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/722C 3 Ltr Dimensions Inches Millim

15、eters Min Max Min Max BL .420 .440 10.67 11.18 BLT .125 3.18 BT .115 2.92 C .469 .509 11.91 12.93 E .038 NOM .97 NOM F .331 .341 8.41 8.66 LC .040 NOM 1.02 NOM LF .055 .075 1.40 1.91 LT .005 .015 .127 .381 LW .185 .215 4.70 5.46 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for genera

16、l information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 4. For anode, cathode, and strap connections, see 3.4.1 and 3.4.3. FIGURE 1. Dimensions and configuration. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,

17、-MIL-PRF-19500/722C 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying acti

18、vity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface

19、 and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 herein. 3.4.1 Diode construction. These devices shall be constructed utilizing double plug construction with eutectic bonding between both sides of the silicon die and terminal pins (see MIL-PRF-19500). Metallurgical bo

20、nd shall be in accordance with the requirements of category II in MIL-PRF-19500. The diode body is ceramic. All seals are eutectic solder. Strap material is a copper alloy or copper sandwich. The 1N6902UTK3, 1N6903UTK3, 1N6904UTK3, and 1N6905UTK3 have no strap. The strap connects to the cathode on 1

21、N6902UTK3CS, 1N6903UTK3CS, 1N6904UTK3CS, and 1N6905UTK3CS and to the anode on 1N6902UTK3AS, 1N6903UTK3AS, 1N6904UTK3AS, and 1N67905UTK3AS. 3.4.2 Lead formation and finish. Unless otherwise specified, lead finish (pads, bottom pad and strap foot) shall be solderable in accordance with MIL-PRF-19500,

22、MIL-STD-750 and herein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition document (see 6.2). 3.4.3 Polarity. Polarity shall be marked with the appropriate diode symbol on the strap or with a dot on the cathode side of the seal ring on “no strap” devices

23、 (see figure 1). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500 and herein. All marking may be omitted from the device except for the polarity marking. When present, part number may be abbreviated (ex: JS6902 for JANS1N6902TK3). All marking that is omitted from the body of the device

24、 shall appear on the label of the initial container. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4 and table I. 3.7 Electrical test requirements. The electrical test requirements shall be the sub

25、groups specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requ

26、irements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein.

27、 4.2.1 Construction verification. Cross sectional photos from three devices shall be submitted in the qualification report. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/722C 5 4.2.2 Group E qualification. Group E inspection shall be

28、performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on th

29、e first inspection lot of this revision to maintain qualification. 4.3 Screening. Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein sha

30、ll not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1) 3b Condition A, one pulse, IO= 0, VRWM= 0, IFSM= see 1.3, column 4 herein. Condition A, one pulse, IO= 0, VRWM= 0, IFSM= see 1.3, column 4 herein. 3c Thermal impedance (see 4.3.1) Thermal

31、impedance (see 4.3.1) 4 Not applicable Not applicable 5 Not applicable Not applicable 7b Optional Optional 8 Serialization required. Not applicable 9 Not applicable Not applicable 10 Not applicable Not applicable 11 VF1and IR1VF1and IR112 Method 1038 of MIL-STD-750, test condition A; TC=150C, t = 24

32、0 hours, VRM= 80 percent of rated VRWM= see 1.3, column 2 herein V (pk), IO= 0, f = 60 Hz; alternate test: VRM= 80 percent of rated VRWM(see 1.3, column 2 herein for VRWM), TC=150C Method 1038 of MIL-STD-750, test condition A; TC=150C, t = 48 hours, VRM= 80 percent of rated VRWM= see 1.3, column 2 h

33、erein V (pk), IO= 0, f = 60 Hz; alternate test: VRM= 80 percent of rated VRWM(see 1.3, column 2 herein for VRWM), TC=150C 13 Subgroup 2, of table I herein, and subgroup 3 of table I herein, VF1and IR1; VF1= 50 mV (pk); IR1= 1 mA dc or 100 percent from the initial value, whichever is greater. Scope d

34、isplay evaluation (see table I, subgroup 7) Subgroup 2, of table I herein excluding thermal impedance; VF1and IR1; VF1= 50 mV (pk); IR1= 1 mA dc or 100 percent from the initial value, whichever is greater. Scope display evaluation (see table I, subgroup 7) 14b Required Required 15 Not applicable Not

35、 applicable (1) Surge shall precede thermal impedance. These tests shall be performed anytime after screen 3a and before screen 10. 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 of MIL-STD-750. See table E-IX, group E, subgroup 4 of MIL

36、-PRF-19500. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted

37、in accordance with the conditions specified for subgroup testing in tables E-VIA (JANS) and E-VIB (JANTX and JANTXV) of MIL-PRF-19500 and 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance

38、 with table III herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/722C 6 4.4.2.1 Group B inspection, table VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 TJ= +85C minimum, IF= 2 A minimum for 2,000 cycles. B5 1038

39、Condition B, IF= 1 A dc minimum, adjust TAand IFto achieve TJ= +175C, +0C, -35C, t = 240 hours min; (heat sinking allowed). 4.4.2.2 Group B inspection, table VIB (JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 TJ= +85C minimum, IF= 2 A minimum for 2,000 cycles. 4.4.3 Group C i

40、nspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table III herei

41、n. Subgroup Method Condition C5 3101 IH= 20 A to 50 A, IM= 10 mA to 250 mA, tH= thermal equilibrium; tMD= 200 s maximum. C6 1037 TJ= +85C minimum, IF= 2 A minimum for 6,000 cycles. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgrou

42、p testing in table IX of MIL-PRF-19500 and table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table III herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appr

43、opriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2. Avalanche energy test. The Schottky rectifier shall be capable of absorbing the reverse energy of 350 rectangular pulse, tp=1 sec, IR= 2 A at 1 kHz. This wi

44、ll be performed during wafer or die level prior to device assembly. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/722C 7 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Vi

45、sual and mechanical examination 2071 Subgroup 2 Thermal impedance 2/ 3101 IM= 10 mA to 250 mA, IH= 50 A, tH= 2 ms, tmd= 200 s maximum ZJX1N6902UTK3, CS, AS .12 C/W 1N6903UTK3, CS, AS .12 C/W 1N6904UTK3, CS, AS .12 C/W 1N6905UTK3, CS, AS .12 C/W Forward voltage 4011 Pulsed test (see 4.5.1) tp= 300 s

46、VF11N6902UTK3, CS, AS IF= 75 A (pk) .65 V 1N6903UTK3, CS, AS IF= 75 A (pk) .71 V 1N6904UTK3, CS, AS IF= 75 A (pk) .79 V 1N6905UTK3, CS, AS IF= 75 A (pk) .87 V Forward voltage 4011 Pulsed test (see 4.5.1) tp= 300 s VF21N6902UTK3, CS, AS IF= 150 A (pk) .78 V 1N6903UTK3, CS, AS IF= 150 A (pk) .82 V 1N6

47、904UTK3, CS, AS IF= 150 A (pk) .88 V 1N6905UTK3, CS, AS IF= 150 A (pk) .94 V Reverse current leakage 4016 DC method IR11N6902UTK3, CS, AS VR= 45 V 5.0 mA 1N6903UTK3, CS, AS VR= 60 V 5.0 mA 1N6904UTK3, CS, AS VR= 80 V 5.0 mA 1N6905UTK3, CS, AS VR= 100 V 5.0 mA Breakdown voltage 4021 Pulsed test (see

48、4.5.1) tp= 35 ms VBR11N6902UTK3, CS, AS IR= 5.0 mA (pk) 50 V 1N6903UTK3, CS, AS IR = 5.0 mA (pk) 66 V 1N6904UTK3, CS, AS IR= 10 mA (pk) 88 V 1N6905UTK3, CS, AS IR= 10 mA (pk) 110 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro

49、m IHS-,-,-MIL-PRF-19500/722C 8 TABLE I. Group A inspection Continued. Inspection1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 3 High temperature operation: TC= +125C Forward voltage 4011 Pulsed test (see 4.5.1) tp= 300 s VF31N6902UTK3, CS, AS IF= 150 A (pk) .73 V 1N6903UTK3, CS, AS IF= 150 A (pk) .