DLA MIL-PRF-19500 714-2009 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR ENCAPSULATED PLASTIC N-CHANNEL SILICON TYPE 2N7558 2N7559 2N7560 JAN JANTX AND JANTXV.pdf

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1、 MIL-PRF-19500/714 20 February 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, ENCAPSULATED PLASTIC, N-CHANNEL, SILICON, TYPE 2N7558, 2N7559 2N7560, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of

2、Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for three plastic, N-channel, enhancement-mode, MOSFET, power transistors. Three levels of prod

3、uct assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, D2Pack (TO-262 with bent leads). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. (1) Derate linearly 1.0 W/C (2N7558), 1.33 W/C (2N7559), and 1.0 W/C (2N7560) for TC +25C.

4、 (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. IDis limited by package and internal construction. (4) IDM= 4 X ID1as calculated in note (3). (5) See figure 3, maximum drain current graphs. AMSC N/A FSC 5961 INCH-POUND Types PT (1) TC=

5、+25C PT(PCB)TA= +25C RJC (2) VDSVDGVGSID1TC=+25C (3) ID2TC=+100C (3) ISIDM (4) (5) TJand TSTG VISO70,000 ft. altitude W W C/W V dc V dc V dc A dc A dc A dc A dc C V dc 2N7558 125 3.12 1.0 60 60 20 72 51 72 288 500 2N7559 167 3.12 0.75 100 100 20 75 53 75 300 500 2N7560 270 3.12 0.50 200 200 20 44 32

6、 44 176 -55 to +150 500 Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the curre

7、ncy of this address information using the ASSIST Online database at http:/assist.daps.dla.mil/. Tat )on (Rx RT- T= IJMDSJCCJMDProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/714 2 1.4 Primary electrical characteristics at TC= +25C.Type

8、Min V(BR)DSSVGS= 0 VGS(TH)VDS VGSMax IDSS1VGS= 0 VDS= at rated VDS Max rDS(ON)(1) VGS= 10 V dc EASat IASIASV dc A dc TJ= +25C TJ= +125C mJ A V dc Min Max 2N7558 60 2.0 4.0 25 0.012 0.024 166 72 2N7559 100 3.5 5.5 1 0.014 0.031 190 45 2N7560 200 3.0 5.0 25 0.054 0.122 460 26 (1) Pulsed (see 4.5.1). 2

9、. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has

10、been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. Th

11、e following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, Gen

12、eral Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, B

13、uilding 4D, Philadelphia, PA 19111-5094.) 2.3 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. JESD22-A101 Steady State Temperat

14、ure Humidity Bias Life Test. JESD22-A102 Accelerated Moisture Resistance - Unbiased Autoclave. JESD22-A113 Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing (Copies of these documents are available from http:/www.jedec.org/default.cfm or the Electronics Industries All

15、iance, 2500 Wilson Boulevard, Arlington, VA 22201-3834.) 2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, howe

16、ver, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/714 3 FIGURE 1. Physical dimensions for D2Pack (2N7558, 2N7559, 2N7560). Provided by IHSNot f

17、or ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/714 4 Symbol Dimensions Notes Inches Millimeters Min Max Min Max BL .330 .380 8.38 9.65 BW .380 .420 9.65 10.67 CH .160 .190 4.06 4.83 2, 3 LL .188 .208 4.78 5.28 LL1 .070 .110 1.78 2.79 LO1 .010 0.25 LS .100

18、 BSC 2.54 BSC LT .015 .029 0.38 0.74 LU .045 .070 1.14 1.78 LW .020 .039 0.51 0.99 OAL .575 .625 14.61 15.88 3 TL1 .270 6.86 3 TL2 .055 1.40 3 TT .045 .065 1.14 1.65 TW .245 6.22 3 Term 1 Gate Term 2, 4 Drain Term 3 Source Notes: 1. Dimensions are in inches. Millimeters are given for general informa

19、tion only. 2. Dimension BL and BW do not include mold flash. Mold flash shall not exceed .005 inches (0.127 mm) per side. These dimensions are measured at the outmost extremes of the plastic body. 3. Shape and dimensions of back plate are uncontrolled. 4. Dimensions and tolerancing shall be in accor

20、dance with ASME Y14.5M. 5. Center lead may or may not be present. 6. Dimensions for leads: only for pre solder tinned FIGURE 1. Physical dimensions for D2Pack (2N7558, 2N7559, 2N7560) - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-P

21、RF-19500/714 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity fo

22、r listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. IAS- Rated avalanche current, nonrepetitive.

23、 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be speci

24、fied in the acquisition document (see 6.2). Lead finish can be redone if needed after all screening tests. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.5.1 Handling. MOS devices must be handled with certain precaution

25、s to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the

26、leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate mu

27、st be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. T

28、he electrical test requirements shall be table I as specified herein. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500, except as specified herein. 3.8.1 JAN brand. The “J“ denotes the JAN brand. Refer to the certificate of conformance or unit packaging for quality assurance level. 3.9

29、 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-195

30、00/714 6 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I). 4.2 Qualification inspection. Qualification inspection s

31、hall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of ta

32、ble II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening ( JANTXV). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified he

33、rein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Measurement Screen (see table E-IV of MIL-PRF-19500) JANTXV Level (1) Gate stress test (see 4.3.1) (1) Method 3470 of MIL-STD-750, EAS(see 4.3.2

34、) 1a Not applicable 1b Method 2069 of MIL-STD-750 required, Pre-cap internal visual inspection 2 Not required 3a Method 1051 of MIL-STD-750 required, temperature cycling 3b Not required (1) 3c Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3) 4 Not required 5 through 9 Not applicable 10 Meth

35、od 1042 of MIL-STD-750, test condition B required, VGS= 16 V dc 11 Subgroup 2 of table I herein 12 Method 1042 of MIL-STD-750, test condition A required. 13a Subgroup 2 of table I herein IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initia

36、l value, whichever is greater. IDSS1= 10 A dc (0.5A dc for 2N7553) or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value. VGS(TH)1= 20 percent of initial value. 13b through 16 Not applicable (1) Shall be performed anytime after temperature cycling, screen 3a; a

37、nd does not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/714 7 4.3.1 Gate stress test. Apply VGS= 24 V minimum for t = 250 s minimum. 4.3.2 Single pulse avalanche energy (EAS). a. Peak c

38、urrent (IAS). . IAS(max). b. Peak gate voltage (VGS). 10 V minimum (up to rated VGS). c. Gate to source resistor (RGS) 25 RGS 200. d. Initial case temperature (TC) . +25C +10C, -5C. e. Inductance (L) minimum mH V)V- V()I(2EBRDDBR2D1AS . f. Number of pulses to be applied . 1 pulse minimum. g. Supply

39、voltage (VDD) 50 V maximum. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table

40、II, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection (JAN, J

41、ANTX, and JANTXV). Group B inspection shall be conducted in accordance with the conditions specified in 4.4.2.1 for JAN, JANTX, and JANTXV and as follows. Electrical measurements (end-points) for JAN, JANTX, and JANTXV shall be after each subgroup below and shall be in accordance with table I, subgr

42、oup 2. Separate samples may be used for each subgroup, n = 45, c = 0. Subgroup Method Condition B1 2026 1022 Solderability. Resistance to solvents (not required for laser marked devices). B1 JESD22-A113 (1) Pre conditioning to level 1 for the following sequential tests: B1 JESD22-A102 (1) Autoclave:

43、 condition C, 96 hours B1 1051 Temp cycle 168 cycles condition G. B2 1056 Thermal shock: 10 cycles, condition A. B3 1042 High temperature reverse bias: Condition B, 80 percent (minimum) of rated VGS. B3 1042 Intermittent operation life: Condition D, 2,000 cycles. The heating cycle shall be 30 second

44、s minimum. B4 2075 Decap internal visual. B4 2031 T = 260C, 10 sec., n = 20, c = 0. (1) Non-government standard document, see 2.3. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/714 8 4.4.2.1 Group B sample selection (JAN, JANTX, and J

45、ANTXV). Samples for subgroups in group B shall be in accordance with MIL-PRF-19500 and as specified herein. Separate samples may be used for each subgroup. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another ass

46、embly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. 4.4.3 Group C inspection. Group C inspection shall be as specified in 4.4.3.1 and shall include tests which are performed periodically. Electrical measurements (end-points) fo

47、r JAN, JANTX, and JANTXV shall be after each subgroup in 4.3.1 and as specified in table I, subgroup 2 herein. Separate samples may be used for each subgroup. For rules on resubmission for failed subgroup, see MIL-PRF-19500. Sample sizes shall be in accordance with the corresponding group C subgroup

48、 from table E-VII of MIL-PRF-19500. 4.4.3.1 Group C inspection (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Separate samples may be used for each step, n = 77, c = 0 Subgroup Method Condition C1 JESD22-A113 (1) Pre conditioning to level 1 C1 2066 Physical dimensions: In accordance with figure 1 herein

49、. C2 1056 Thermal shock: condition B. Electrical measurements. C2 1051 Temp. cycle: condition G, 500 cycles. C3 JESD22-A101 (1) High temperature reverse bias: 500 hours, (85/85 biased): 80 percent V; max of 100 V. C4 1042 High temperature reverse bias: Condition B, 80 percent (minimum) of rated VGS. C4 1042 Inter