DLA MIL-PRF-19500 710 C-2013 SEMICONDUCTOR DEVICE TRANSISTOR NPN SILICON POWER TYPES 2N6674T1 2N6674T3 2N6675T1 AND 2N6675T3 JAN JANTX AND JANTXV.pdf

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1、 MIL-PRF-19500/710C 18 December 2013 SUPERSEDING MIL-PRF-19500/710B 15 September 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6674T1, 2N6674T3, 2N6675T1, AND 2N6675T3, JAN, JANTX, AND JANTXV This specification is approved for use by all Departme

2、nts and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed

3、 power-switching applications. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-254AA) and figure 2 (TO-257AA). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type PT(1) RJCRJCVCBOVCEOVEBOIBICTJTA

4、= +25C TC= +25C T1 only (1) T3 only (1) and VCEXand TSTGW W C/W C/W V dc V dc V dc A dc A dc C 2N6674T1 6 (2) 175 1.0 450 300 7 5 15 -65 to +200 2N6674T3 4 (2) 175 1.3 450 300 7 5 15 2N6675T1 6 (2) 175 1.0 650 400 7 5 15 2N6675T3 4 (2) 175 1.3 650 400 7 5 15 (1) For derating, see figures 3 and 4. Fo

5、r thermal impedance curves, see figures 5 and 6. (2) For TO-257 devices, ratings at 125W and 1.3C/W only. AMSC N/A FSC 5961INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to

6、Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this document shall be completed by 18 Fe

7、bruary 2014. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/710C 2 1.4 Primary electrical characteristics at TC= +25C. Limit VBE(sat)IC= 10 A dc IB= 2 A dc VCE(sat)IC= 10 A dc IB= 2 A dc CoboVCB= 10 V dc IE= 0 A dc 100 kHz f 1 MHz hfe

8、VCE= 10 V dc IC= 1 A dc f = 5 MHz Min Max V dc 1.5 V dc 1.0 pF 150 500 3 10 Limit hFE1hFE2Switching parameters VCE= 3 V dc IC= 1 A dc VCE= 2 V dc IC= 10 A dc (1) td tr ts tf tc Min Max 15 40 8 20 s 0.1 s 0.6 s 2.5 s 0.5 s 0.5 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents

9、 listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list

10、, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbo

11、oks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STA

12、NDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of preced

13、ence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption

14、has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/710C 3 NOTES: 1. Dimensions are in inches. Millimeters equivalents are given for general information only. 2. All terminals are isolated from case. 3. Methods used for e

15、lectrical isolation of the terminals feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3 (ceramic). 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Dimensions and configuration 2N6674T1 and 2N6675T1 (TO-254AA). Dimensions Ltr Inches Mi

16、llimeters Min Max Min Max BL .535 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.94 14.48 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.84 Term 1 Base T

17、erm 2 Collector Term 3 Emitter Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/710C 4 NOTES: 1. Dimensions are in inches. Millimeters equivalents are given for general information only. 2. Methods used for electrical isolation of the te

18、rminals feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3 (ceramic). 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Dimensions and configuration for 2N6674T3 and 2N6675T3 (TO-257AA). Dimensions Ltr Inches Millimeters Min Max Min Max

19、 BL .410 .430 10.41 10.92 CH .190 .200 4.83 5.08 LD .025 .035 0.64 0.89 LL .500 .750 12.70 19.05 LO .120 BSC 3.05 BSC LS .100 BSC 2.54 BSC MHD .140 .150 3.56 3.81 MHO .527 .537 13.39 13.63 TL .645 .665 16.38 16.89 TT .035 .045 0.89 1.14 TW .410 .420 10.41 10.67 Term 1 Base Term 2 Collector Term 3 Em

20、itter Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/710C 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this sp

21、ecification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions u

22、sed herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 and figure 2. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and here

23、in. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirem

24、ents. The electrical test requirements shall be table I, group A as specified herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will

25、affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4, and tables I, II, and III). 4.2 Qu

26、alification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E qualification shall be performed herein for qualification or requalification only. In case qualification was awarded to a prior revision of the ass

27、ociated specification that did not request the performance of table III tests, the tests specified in a table III herein shall be performed by the first inspection lot to this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro

28、m IHS-,-,-MIL-PRF-19500/710C 6 * 4.3 Screening (JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shal

29、l not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) JANTX and JANTXV levels (1) 3c Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.2) 9 ICEX111 ICEX1and hFE2; ICEX1= 100 percent of initial value or 50 A dc, whichever is greater 12 See 4.3.1 13a Subgroup 2 of table I here

30、in; ICEX1= 100 percent of initial value or 50 A dc, whichever is greater; hFE2= 20 percent of initial value 17 For TO-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.3), Endpoints: Subgroup 2 of table I herein. (1) Shall be performed any time after temperature cycling, screen 3a; and does not ne

31、ed to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ= +175C minimum; VCB= 100 V dc; TA +35C. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guid

32、elines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. * 4.3.3 Dielectric withstanding voltage. a. Magnitude of test voltage900 V dc. b. Duration of application of test voltage15 seconds (m

33、in). c. Points of application of test voltage.All leads to case (bunch connection). d. Method of connectionMechanical. e. Kilovolt-ampere rating of high voltage source.1,200 V/1.0 mA (min). f. Maximum leakage current.1.0 mA. g. Voltage ramp up time.500 V/second. * Provided by IHSNot for ResaleNo rep

34、roduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/710C 7 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500,

35、and table I herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIB (JAN, JANTX, and JANTXV) and in 4.4.2.1 h

36、erein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with table II herein. Subgroup Method Inspection B3 1027 For eutectic die attach: VCB 100 V dc; adjust PTto achieve TJ= +175 C minimum; TA +35C. B3 1037 For s

37、older die attach: VCB 100 V dc. B5 3131 See thermal impedance curves figures 5 and 6. * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and herein. Electrical measurements (end-points) sh

38、all be in accordance with group A, subgroup 2 herein. Delta requirements shall be in accordance with table II herein. Subgroup Method Inspection C2 2036 Test condition A; weight = 10 pounds; time = 15 s. C2 2036 Test condition D1; torque = 6 inch-ounce; time =15 s. C6 1027 For eutectic die attach: V

39、CB 100 V dc; adjust PTto achieve TJ= +175 C minimum, TA +35C. C6 1037 For solder die attach: VCB 100 V dc. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III her

40、ein. Electrical measurements (end-points) shall be accordance with table I, subgroup 2 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4

41、 of MIL-STD-750. * * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/710C 8 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limit Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2

42、Collector to base breakdown voltage 2N6674T1, 2N6674T3 2N6675T1, 2N6675T33011 Bias condition D, IC= 200 mA dc; pulsed (see 4.5.1) V(BR)CEO300 400 V dc Collector to emitter cutoff current 2N6674T1, 2N6674T3 2N6675T1, 2N6675T33041 Bias condition D; VBE= -1.5 V dc VCE= 450 V dc VCE= 650 V dc ICEX10.1 m

43、A dc Collector to base cutoff current 2N6674T1, 2N6674T3 2N6675T1, 2N6675T33036 Bias condition D VCB= 450 V dc VCB= 650 V dc ICBO1.0 mA dc Emitter-base cutoff current 3061 Bias condition D, VEB= 7 V dc IEBO2.0 mA dc Base emitter voltage 3066 Test condition A; IC= 10 A dc; pulsed (see 4.5.1); IB= 2 A

44、 dc VBE(sat)1.5 V dc Collector to emitter saturated voltage 3071 IC= 10 A dc; pulsed (see 4.5.1); IB= 2 A dc VCE(sat)11.0 V dc Collector to emitter saturated voltage 3071 IC= 15 A dc; pulsed (see 4.5.1); IB= 5 A dc VCE(sat)25.0 V dc Forward-current transfer ratio 3076 VCE= 3 V dc; IC= 1 A dc; pulsed

45、 (see 4.5.1) hFE115 40 Forward-current transfer ratio 3076 VCE= 2 V dc; IC= 10 A dc; pulsed (see 4.5.1) hFE28 20 See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/710C 9 TABLE I. Group A inspection - Continue

46、d. Inspection 1/ MIL-STD-750 Symbol Limit Unit Method Conditions Min Max Subgroup 3 High-temperature operation: TA= +125C Collector to emitter cutoff current 3041 Bias condition A; VBE= -1.5 V dc ICEX22N6674T1, 2N6674T3 2N6675T1, 2N6675T3 VCE= 450 V dc VCE= 650 V dc 1.0 1.0 mA dc mA dc Collector to

47、emitter cutoff current 3041 TA= +125C, bias condition A ICEO2N6674T1, 2N6674T3 2N6675T1, 2N6675T3 VCE= 300 V dc VCE= 400 V dc 90 90 Collector to emitter saturated voltage 3071 IC= 10 A dc; IB= 2 A dc; pulsed (see 4.5.1) VCE(sat)22.0 V dc Switching parameters: TA=+125C Pulse delay time See figure 7 t

48、d0.1 s Pulse rise time See figure 7 tr1.0 s Pulse storage time See figure 7 ts4.0 s Pulse fall time See figure 7 tf1.0 s Cross over time See figure 7 tc0.8 s Low-temperature operation: TA= -55C Forward-current transfer ratio 3076 VCE= 2 V dc; IC= 10 A dc; pulsed (see 4.5.1) hFE34 Subgroup 4 Magnitude of common emitter small-signal short- circuit forward- current transfer ratio 3306 VCE= 10 V dc; IC= 1 A dc; f = 5 MHz |hfe| 3 10 Open capacitance (open circuit) 3236 VCB= 10 V dc; IE= 0; 100 kHz f 1.0 MHz Cobo150 500 pF Switching parameters: TA= +125