DLA MIL-PRF-19500 610 E (1)-2012 SEMICONDUCTOR DEVICE HERMETIC DIODE SILICON SCHOTTKY BARRIER TYPES 1N6677-1 AND 1N6677UR-1 JAN JANTX JANTXV JANS JANHC AND JANKC.pdf

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1、 MIL-PRF-19500/610E w/AMENDMENT 1 9 July 2012 SUPERSEDING MIL-PRF-19500/610E 1 December 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N6677-1 AND 1N6677UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for

2、use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, Schottky barrier diodes.

3、Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die. 1.2 Physical dimensions. See figure 1 (DO-35), figure 2 (DO-213AA), and figure 3 (JANHC and JANKC die) dimensio

4、ns. * 1.3 Maximum ratings. Types VRWMIO1 (1) IFSMTSTGTJV (pk) mA dc A (pk) C C 1N6677-1, 1N6677UR-1 40 200 5 -65 to +150 -65 to +125 (1) For derating, see figures 4 and 5. AMSC N/A FSC 5961 * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, VAC, P.O.

5、 Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil. INCH-POUND The documentation and process conversion measures necess

6、ary to comply with this revision shall be completed by 9 October 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/610E w/ AMENDMENT 1 2 Symbol Dimensions Notes Inches Millimeters Min Max Min Max LD .018 .022 0.46 0.56 BD .055 .090

7、1.40 2.29 3 BL .120 .200 3.05 5.08 3 L 1.000 1.500 25.40 38.10 LL1.050 1.27 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Package contour optional within BD and length L. Heat slugs, if any, shall be included within this cylinder but shall not be sub

8、ject to minimum limit of BD. 4. Within this zone lead, diameter may vary to allow for lead finishes and irregularities other than heat slugs. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions of 1N6677-1 (DO-35). DO-35 Provided by IHSNot for Re

9、saleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/610E w/ AMENDMENT 1 3 Symbol Dimensions Inches Millimeters Min Max Min Max BD .063 .067 1.60 1.70 ECT .016 .022 0.41 0.56 BL .130 .146 3.30 3.71 S .001 min 0.03 min NOTES: 1. Dimensions are in inches. 2. Millimete

10、rs are given for general information only. FIGURE 2. Physical dimensions of surface mount family, 1N6677UR-1 (DO-213AA). DO-213AA Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/610E w/ AMENDMENT 1 4 A version Symbol Dimensions Inches M

11、illimeters Min Max Min Max A .021 .025 0.53 0.64 B .013 .017 0.33 0.43 Design data Metallization: Top: (Anode) . AL Back: (Cathode) Au AL thickness 25,000 minimum Gold thickness . 4,000 minimum Chip thickness . 10 mils (0.254 mm) 2 mils (0.051 mm) FIGURE 3. JANC (A-version) die dimensions. Provided

12、by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/610E w/ AMENDMENT 1 5 * 1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics at TA= +25C. Types Max VFM1Max VFM2Max VFM3Max IRMVRM= 40 V dc pulsed

13、method (see 4.5.1) Max RJLor RJEC.375 inch (9.52 mm) lead (1) Max ZJXMax CTVR= 0 V dc IFM= 20 mA IFM= 200 mA IFM= 630 mA TJ= +25C IRM1 TJ= +100C IRM2 length or end cap 1N6677-1 1N6677UR-1 V (pk) 0.37 0.37 V (pk) 0.50 0.50 V (pk) 0.70 0.70 A 5.0 5.0 mA 0.60 0.60 C/W 250 100 C/W 20 20 pF 50 50 (1) For

14、 thermal impedance curves, see figures 6 and 7. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional in

15、formation or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.

16、1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATI

17、ON MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARD MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil or from the Standardization Docum

18、ent Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothin

19、g in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/610E w/ AMENDMENT 1 6 3. REQUIREMENTS 3.1 General. The individual ite

20、m requirements shall be as specified in MIL-PRF-19500 and as modified herein. * 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QM

21、L) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500 and on

22、figures 1, 2, and 3 herein. 3.4.1 Lead material and finish. Lead material shall be copper clad steel with a minimum of 50 percent copper by weight. Lead finish shall be in accordance with MIL-PRF-19500 and MIL-STD-750. Where a choice of lead finish is desired, it shall be specified in the acquisitio

23、n document (see 6.2). 3.4.2 Diode construction. All devices shall be metallurgically bonded, double plug construction in accordance with the requirements of category I or II (see MIL-PRF-19500). 3.4.2.1 Surface mount. The UR version shall be considered structurally identical to the non-UR version ex

24、cept for lead attach. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5.1 Marking for UR devices. UR-suffix devices only, all marking (except for 3.6) may be omitted from the body, but shall be retained on the initial container. 3.6 Polarity. The polarity of all types shall be indi

25、cated with a contrasting color band to denote the cathode end. Alternatively, for UR suffix devices, a minimum of three contrasting color dots spaced around the periphery on the cathode end may be used. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical per

26、formance characteristics are as specified in 1.3, 1.4, and table I. 3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free

27、 from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2

28、 Qualification inspection. Qualification inspection shall be in accordance with table II herein and MIL-PRF-19500. * 4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500 and 4.4.4 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted

29、 without license from IHS-,-,-MIL-PRF-19500/610E w/ AMENDMENT 1 7 * 4.2.2 JANHC and JANKC devices. Qualification for JANC devices shall be in accordance with appendix G of MIL-PRF-19500. This testing may be performed on a TO-5 package in lieu of the axial leaded package. * 4.3 Screening (JAN, JANTX,

30、 JANTXV, and JANS levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. * 4.3 Screening (JAN, JANT

31、X, JANTXV, and JANS levels only) - Continued. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV level JAN level 1a 1b Required Required Not required Required (JANTXV only) Not required Not required 2 Not required Not required Not required 3a Required Required Required

32、in accordance with MIL-PRF-19500, JANTX level 3b Not applicable Not applicable Not applicable (1) 3c Required (see 4.3.3) Required (see 4.3.3) Required (see 4.3.3) 4, 5, 6, and 7a Not applicable Not applicable Not applicable 7b Required Required Not required 8 Required Not required Not required 9 Re

33、quired, IR1and VF2Not applicable Not applicable (2) 10 Required, TA= +110C; VRWM= 40 V(pk); IO= 0, half sine wave, f = 60 Hz Required, TA= +110C; VRWM= 40 V(pk); IO= 0, half sine wave, f = 60 Hz Not applicable 11 Required, IR1 100 percent of initial reading or 2 A whichever is greater. VFM2 50 mV dc

34、. Required, IR1and VFM2Not applicable 12 Required, See 4.3.2 Required, See 4.3.2, t = 48 hours Not applicable 13 Required, Subgroup 2 of table I herein; IR1 100 percent of initial reading or 2 A whichever is greater; VFM2 50 mV dc. Required, Subgroup 2 of table I herein; IR1 100 percent of initial r

35、eading or 2 A whichever is greater; VFM2 50 mV dc. Not applicable 14a 14b Not applicable Optional (3) Not applicable Optional (3) Not applicable Not required 15 and 16 Required Not required Not required (1) Thermal impedance shall be performed any time after sealing provided temperature cycling is p

36、erformed in accordance with table E-IV of MIL-PRF-19500, screen 3 prior to this thermal test. (2) Junction temperature (TJ) is not to exceed 115C at VRWM. TJis affected by the device mounting thermal resistance when parasitic power is generated by the temperature dependent leakage current. Until thi

37、s leakage becomes significant near thermal runaway, TJremains approximately equal to TAor TJfor IO= 0. (3) In accordance with MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/610E w/ AMENDMENT 1 8 4.3.1 Screening (JANHC or

38、 JANKC). Screening of die shall be in accordance with MIL-PRF-19500. As a minimum, die shall be 100 percent probed in accordance with table 1, subgroup 2. 4.3.2 Burn-in conditions. Burn-in conditions are as follows: IF= 200 mA dc. Mounting and test conditions in accordance with method 1038 of MIL-ST

39、D-750, test condition B. 4.3.2.1 Mounting. Devices may be mounted using any convenient method including the temporary attachment of leads on UR suffix devices, provided that the parts are burned-in at TJ +110C. 4.3.3 Thermal impedance (ZJXmeasurements). The ZJXmeasurements shall be performed in acco

40、rdance with method 3101 of MIL-STD-750. The maximum screen limit shall be developed by the supplier using statistical methods and it shall not exceed table 1, subgroup 2 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. * 4.4.1 Group A inspection.

41、Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. The following test conditions shall be used for ZJX, table 1 inspection: a. IMmeasurement current . 1 mA to 10 mA. b. IHforward heating current 0.5 A to 1.0 A. c. tHheating time 10 ms. d. tMDmeasu

42、rement delay time 70 s maximum. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIa (JANS), and table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical measurements (end-points) shall be in accord

43、ance with the applicable inspections of table I, subgroup 2 herein. * 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1056 -55C to 100C, 25 cycles, n = 22, c = 0. 1051 -55C to 150C, 100 cycles, n = 22, c = 0. B3 4066 IFSM= 5 A(pk), condition A 2, IO= 200

44、 mA; TA= room ambient as defined in the general requirements of MIL-STD-750 (see 4.5); 5 surges of 8.3 ms each at 1 minute intervals. B4 1036 IO= 200 mA; TA= room ambient as defined in the general requirements of MIL-STD-750 (see 4.5); f = 50 - 60 Hz; VRWM= 40 V(pk); ton= toff= 3 minutes minimum for

45、 2,000 cycles. B5 1027 IF= 200 mA dc minimum, adjust IFor TAto achieve TJ= + 125C minimum. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/610E w/ AMENDMENT 1 9 * 4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, JANTXV of MIL-PRF-19

46、500). Subgroup Method Condition B2 1056 -55C to 100C, 10 cycles, n = 22, c = 0. 1051 -55C to 150C, 25 cycles, n = 22, c = 0. B2 4066 IFSM= 5 A(pk), condition A 2, IO= 200 mA; TA= room ambient as defined in the general requirements of MIL-STD-750 (see 4.5); 5 surges of 8.3 ms each at 1 minute interva

47、ls. B3 1027 IF= 200 mA dc minimum, adjust IFor TAto achieve TJ= + 125C minimum. B4 2075 As specified. * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-point

48、s) shall be in accordance with the applicable inspections of table I, subgroup 2 herein. * 4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Tension: Test condition A; weight = 10 pounds; t = 15 s. Lead fatigue: Test condition E; weight 1 pound. NOTE: Both t

49、ension and lead fatigue are not applicable for UR devices. C5 3101 See 4.4.5 herein. C6 1027 IF= 200 mA dc minimum, adjust IFor TAto achieve TJ= + 125C minimum. * 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with table E-IX of MIL-PRF-19500 and the conditions for subgroup