DLA MIL-PRF-19500 605 D-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS N-CHANNEL SILICON TYPES 2N7292 2N7294 2N7296 AND 2N7298 JANTXVM D R .pdf

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1、 MIL-PRF-19500/605D 20 November 2013 SUPERSEDING MIL-PRF-19500/605C 16 April 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R Thi

2、s specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for an

3、 N-Channel, enhancement-mode, MOSFET, radiation hardened (total dose only), power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to

4、TO-254). 1.3 Maximum ratings (TC= +25C, unless otherwise specified). Type PT(1) PTVDSVDGVGSID1(2) ID2(2) ISIDMTJVISOTC= +25C TA= +25C TC= +25C TC= +100C (2) (3) and TSTG70,000 feet altitude W W V dc V dc A dc A dc A dc A dc A(pk) C V dc 2N7292 125 2.5 100 100 20 25 20 25 75 -55 to +150 N/A 2N7294 12

5、5 2.5 200 200 20 23 15 23 69 -55 to +150 N/A 2N7296 125 2.5 250 250 20 17 11 17 51 -55 to +150 250 2N7298 125 2.5 500 500 20 9 6 9 27 -55 to +150 500 (1) Derate linearly 1.0 W/C for TC +25C. (2) The following formula derives the maximum theoretical IDlimit. IDis limited by package and internal wires

6、 and may be limited by pin diameter: (3) IDM= 4 x IDas calculated by note (2). AMSC N/A FSC 5961 INCH-POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDThe documentation and process conversion measures necessary to comply with this document shall be completed by 20 January 2014. * Comments, suggestions, o

7、r questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at

8、https:/assist.dla.mil/. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/605D 2 1.4 Primary electrical characteristics at TC= +25C. Min V(BR)DSSVGS= 0 ID= 1.0 mA dcVGS(th)1VDS VGSID= .250 mA dcMax IDSS1VGS= 0 VDS= 80 percent of rated VDS

9、Max rDS(on)VGS= 10 V dc (1) RJCmax (2) IAS= IDMEASat IASTypeV dc TJ= +25C at ID2TJ= +125C at ID2V dcMin Max A dc C/W A(pk) mJ 2N7292100 2 4 25 0.070 0.140 1.00 75 281 2N7294 200 2 4 25 0.115 0.253 1.00 69 238 2N7296 250 2 4 25 0.185 0.444 1.00 51 130 2N7298 500 2 4 25 0.615 1.60 1.00 27 36 (1) Pulse

10、d (see 4.5.1). (2) See figure 2 thermal impedance curves. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for add

11、itional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government do

12、cuments. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENS

13、E SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardizati

14、on Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes appl

15、icable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/605D 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminal

16、s are isolated from case. 4. The preferred measurements used herein are the metric units. However, this transistor was designed using inch-pound units of measurement. In case of conflicts between the metric and inch-pound units, the inch-pound units shall be the rule. 5. In accordance with ASME Y14.

17、5M, diameters are equivalent to x symbology. 6. Die to base is BeO isolated, terminals to case ceramic (AL2O3) isolated. FIGURE 1. Physical dimensions for TO-254AA (2N7292, 2N7294, 2N7296, and 2N7298). Dimensions Notes Ltr Inches Millimeters Min Max Min Max BL .530 .550 13.46 13.97 CH .249 .260 6.32

18、 6.60 LD .035 .045 0.89 1.14 LL .520 .560 13.21 14.22 LO .150 BSC 3.81 BSC LS .150 TYP 3.81 TYP MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 3, 4 TT .040 .050 1.02 1.27 3, 4 TW .535 .545 13.59 13.84 Term 1 Drain Term 2 Source Term 3 Gate Provided by IHSNot for ResaleNo

19、reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/605D 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are

20、 manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MI

21、L-PRF-19500 and as follows: IAS- Rated avalanche current, non-repetitive. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and figure 1 (TO-254AA) herein. 3.4.1 Lead material and finish. Lead material shall be Kovar or Alloy 52; a c

22、opper core or plated core is permitted. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition documents (see 6.2). 3.4.2 Internal construction. Multiple chip construction is not permitt

23、ed to meet the requirements of this specification. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking of the country of origin may be omitted from the body of the transistor, but shall be retained on the initial container. 3.6 Electrostatic dis

24、charge protection. The devices covered by this specification require electrostatic discharge protection. 3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.6).

25、 a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relat

26、ive humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. 3.7 Electrical performance characte

27、ristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I. 3.9 Workmanship. Semiconductor devices shall be processed

28、in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/605D 5 4. VERIFICATION 4.1 Classification of inspect

29、ions. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and

30、as specified herein. Alternate flow is allowed for qualification inspection in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the associated specifi

31、cation that did not request the performance of table III tests, the tests specified in table III herein shall be performed by the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF

32、-19500/605D 6 * 4.3 Screening (JANS and JANTXV levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Sc

33、reen (see table E-IV of MIL-PRF-19500) (1) (2) Measurement JANS level JANTXV level (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) EAStest, method 3470 of MIL-STD-750 (see 4.3.2) EAStest, method 3470 of MIL-STD-750 (see 4.3.2) (3) 3c VSDtest, method 3161 of MIL-STD-750 (see 4.3.3)

34、VSDtest, method 3161 of MIL-STD-750 (see 4.3.3) (4) Subgroup 2 of table I herein Subgroup 2 of table I herein 9 IGSSF1, IGSSR1, IDSS1Not applicable 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, RDS(on)1, VGS(th)1Subgroup 2 of t

35、able I herein. IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1Subgroup 2 of table I herein.

36、12 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A or TA= +175C and t = 48 hours min (5) 13 Subgroup 2 and 3 of table I herein. IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater IGSSR1= 20 nA dc or 100 percent of initial value, whichever

37、 is greater IDSS1= 25 A dc or 100 percent of initial value, whichever is greater RDS(on)1= 20 percent of initial value. VGS(th)1= 20 percent of initial value. Subgroup 2 and 3 of table I herein. IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent o

38、f initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. RDS(on)1= 20 percent of initial value. VGS(th)1= 20 percent of initial value. 17 For TO-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. For TO

39、-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.4), Endpoints: Subgroup 2 of table I herein. (1) At the end of the test program, IGSSF1, IGSSR1and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1and VGS(th)1shall be invoked. (3) Shall be performed any time b

40、efore screen 9. (4) Shall be performed after VSDtest, EAStest, and gate stress test. (5) Use of this accelerated screening option requires a 1,000-hour life test in accordance with applicable group E, subgroup 2 life test, and end-points specified herein to be provided to the qualifying activity for

41、 review and acceptance. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/605D 7 4.3.1 Gate stress test. Apply VGS= 30 V minimum for t = 250 s minimum. 4.3.2 Single pulse avalanche energy (EAS). a. IAS= IDM. b. L = .1 mH. c. EAS= 1/2 LI

42、AS2. d. Initial junction temperature = +25C, +10C, -5C. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time

43、(tMD) = 70 s max. See table III, group E, subgroup 4 herein. * 4.3.4 Dielectric withstanding voltage. a. Magnititude of test voltage900 V dc. b. Duration of application of test voltage15 seconds (min). c. Points of application of test voltage.All leads to case (bunch connection). d. Method of connec

44、tionMechanical. e. Kilovolt-ampere rating of high voltage source.1,200 V/1.0 mA (min). f. Maximum leakage current.1.0 mA. g. Voltage ramp up time.500 V/second. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspect

45、ion. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. (End-point electrical measurements shall be in accordance table I, subgroup 2 herein.) 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgr

46、oup testing in table E-VIA (JANS) and table E-VIB (JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/60

47、5D 8 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Condition G, 100 cycles. B4 1042 Condition D. No heat sink or forced air cooling on the device shall be permitted during the on cycle. ton= 30 seconds minimum. B5 1042 Condition A; VDS= 100 percen

48、t of rated; TA= +175C, t = 120 hours, or TA= +150C, t = 120 hours minimum. Read and record VBR(DSS)(pre and post) at ID= 1 mA; Read and record IDSS(pre and post) in accordance with table I, subgroup 2. B5 1042 Condition B; VGS= 100 percent of rated; TA= +175C; t = 24 hours minimum. 4.4.2.2 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition G, 25 cycles. B3 1042 The heating cycle shall be 30 seconds minute minimum. B5 Not applicable. B6 Not applicable. 4.4.3 Group C inspection. Group C inspection shall