DLA MIL-PRF-19500 595 K-2013 SEMICONDUCTOR DEVICE REPETITIVE AVALANCHE FIELD EFFECT TRANSISTOR P-CHANNEL SILICON TYPES 2N7236 2N7237 2N7236U AND 2N7237U JAN JANTX JANTXV JANS JANHC.pdf

《DLA MIL-PRF-19500 595 K-2013 SEMICONDUCTOR DEVICE REPETITIVE AVALANCHE FIELD EFFECT TRANSISTOR P-CHANNEL SILICON TYPES 2N7236 2N7237 2N7236U AND 2N7237U JAN JANTX JANTXV JANS JANHC.pdf》由会员分享，可在线阅读，更多相关《DLA MIL-PRF-19500 595 K-2013 SEMICONDUCTOR DEVICE REPETITIVE AVALANCHE FIELD EFFECT TRANSISTOR P-CHANNEL SILICON TYPES 2N7236 2N7237 2N7236U AND 2N7237U JAN JANTX JANTXV JANS JANHC.pdf（21页珍藏版）》请在麦多课文档分享上搜索。

1、 MIL-PRF-19500/595K 20 November 2013 SUPERSEDING MIL-PRF-19500/595J 25 October 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This sp

2、ecification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a P-ch

3、annel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die,

4、 with avalanche energy ratings (EASand EAR) and maximum avalanche current (IAR). 1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 (TO-267AB) for surface mount devices, and figure 3 and 4 for JANHC and JANKC (die) dimensions. 1.3 Maximum ratings (TC= +25C, unless otherwise specified). Type

5、PT(1) PTRJCMin V(BR)DSSVGSID1(3) (4)ID2(3) (4)ISIDMTJTC= +25C TA= +25C (2) VGS= 0 ID= -1.0 mA dc TC= +25C TC= +100C (5) and TSTGW W C/W V dc V dc A dc A dc A dc A (pk) C 2N7236, 2N7236U 125 4.0 1.0 -100 20 -18 -11 -18 -72 -55 to +1502N7237, 2N7237U 125 4.0 1.0 -200 20 -11 -7 -11 -44 -55 to +150See n

6、otes next page. AMSC N/A FSC 5961 INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 20 January 2014. * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990,

7、Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. Provided by IHSNot for ResaleNo reproduction or networking permitted without

8、license from IHS-,-,-MIL-PRF-19500/595K 2 1.3 Maximum ratings - continued. Type IAREASEARrDS(on)max (6) VGS= -10 V dc ID= ID2TJ= +25C TJ= +150C 2N7236, 2N7236U 2N7237, 2N7237U A -18 -11 mJ 500 500 mJ 12.5 12.5 ohm 0.20 0.51 ohm 0.400 1.122 (1) Derate linearly 1.0 W/C for TC +25C. (2) See figure 5, t

9、hermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. IDis limited by package and internal wires and may be limited by pin diameter: (4) See figure 6, maximum drain current graphs. (5) IDM= 4 X ID1as calculated in footnote (3). (6) Pulsed (see 4.5.1). 1.4 Primar

10、y electrical characteristics. TC= +25C (unless otherwise specified). Type Min V(BR)DSSVGS(th)1Max IDSS1VGS= 0 Max rDS(on)1(1) VGS= 0 ID= -1.0 mA dc VDS VGSID= -0.25 mA dc VDS= 80 percent of rated VDSID= ID2VGS= 10 V V dc V dc A dc Ohms Min Max 2N7236, 2N7236U -100 -2.0 -4.0 -25 0.20 2N7237, 2N7237U

11、-200 -2.0 -4.0 -25 0.51 (1) Pulsed (see 4.5.1). Tat )on (Rx RT- T= IJMDSJCCJMDProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/595K 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Protrusio

12、n thickness of ceramic eyelets included in dimension LL. 4. All terminals are isolated from case. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for TO-254AA (2N7236 and 2N7237). Dimensions Notes Ltr Inches Millimeters Min Max Min Max BL .53

13、5 .545 13.59 13.84 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .510 .570 12.95 14.48 3 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 4 TT .040 .050 1.02 1.27 4 TW .535 .545 13.59 13.84 Term 1 Drain Term 2 Source Term 3 Gate

14、Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/595K 4 Dimensions Letter Inches Millimeters Min Max Min Max BL .620 .630 15.75 16.00 BW .445 .455 11.30 11.56CH .142 3.60 LH .010 .020 0.26 0.50 LL1.410 .420 10.41 10.67 LL2.152 .162 3.86

15、4.11 LS1.210 BSC 5.33 BSC LS2.105 BSC 2.67 BSC LW1.370 .380 9.40 9.65 LW2.135 .145 3.43 3.68 Q1.030 0.76 Q2.035 0.89 Term 1 Drain Term 2 Gate Term 3 Source NOTES: 1. Dimensions are in inches. 2. Millimeters are given for information only. 3. The lid shall be electrically isolated from the drain, gat

16、e and source. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Dimensions and configuration of surface mount package outline (TO-267AB), 2N7236U and 2N7237U). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PR

17、F-19500/595K 5 A version Inches mm .018 0.46 .025 0.64 .027 0.69 .042 1.07 .060 1.52 .063 1.60 .162 4.11 .170 4.32 .192 4.88 .219 5.56 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for information only. 3. Unless otherwise specified, tolerance is .005 inch (0.13 mm). 4. Physical chara

18、cteristics of the die thickness = .0187 inch (0.47 mm). 5. Back metal: Cr - Ni - Ag. 6. Top metal: Al. 7. Back contact: Drain. 8. See 6.5 for ordering information. FIGURE 3. Physical dimensions JANHCA and JANKCA die. Provided by IHSNot for ResaleNo reproduction or networking permitted without licens

19、e from IHS-,-,-MIL-PRF-19500/595K 6 2N7236 Dimensions - 2N7236 Ltr Inches Millimeters Min Max Min Max A .177 .183 4.50 4.65 B .177 .183 4.50 4.65 C .030 .034 .76 .86 D .017 .022 .43 .56 E .034 .038 .86 .97 F .047 .051 1.19 1.30 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general

20、 information only. 3. Unless otherwise specified, tolerance is .005 inch (0.13 mm). 4. The physical characteristics of the die are: The back metals are chromium, nickel, and silver and the back contact is the drain. The top metal is aluminum. 5. Die thickness is .015 inch (0.38 mm) .001 inch (0.025

21、mm). FIGURE 4 . JANHCB and JANKCB (B-version) die dimensions for 2N7236 only. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/595K 7 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3,

22、4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet al

23、l specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specif

24、ied herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor D

25、evices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract,

26、 in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The ind

27、ividual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers

28、 list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. nC nano Coulomb. 3.4 Interface and physical dimensions. Interface and physical dimensions shall

29、 be as specified in MIL-PRF-19500, and on figures 1 (TO-254AA), 2 (TO-267AB, surface mount), and 3 and 4 (die) herein. Methods used for electrical isolation of the terminal feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3(ceramic). Examples of such construction techniqu

30、es are metallized ceramic eyelets or ceramic walled packages. 3.4.1 Lead formation and finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead formation or finish is desired, it shall be specified in the acquisition document (see 6.2)

31、. When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with screen 14 of table E-IV of MIL-PRF-19500 and 100 percent dc testing in accordance with table I, subgroup 2 herein. Provided by IHSNot for ResaleNo reproduction or networking permit

32、ted without license from IHS-,-,-MIL-PRF-19500/595K 8 3.4.2 Internal construction. Multiple chip construction is not permitted. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. 3.5.1 Handling. MOS devices must be handled with certain

33、 precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive and grounded surface. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle

34、devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any

35、 lead. h. Gate must be terminated to source. R 100 k, whenever bias voltage is to be applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requi

36、rements. The electrical test requirements shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500, except at the option of the manufacturer, the country of origin and/or the manufacturers identification may be omitted from the body of the transistor. 3.9 Work

37、manship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as

38、follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for qualification inspection in accordance with

39、 of MIL-PRF-19500. 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revi

40、sion of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo repr

41、oduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/595K 9 4.3 Screening (JANTX, JANTXV, and JANS levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I here

42、in. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) (1) (2) Measurement JANS level JANTX and JANTXV level (3) Gate stress test (see 4.3.2) Gate stress test (see 4.3.2) (3) Method 3470 of MIL-STD-750. (see 4.3.3) Method 3470 of MIL-ST

43、D-750. (see 4.3.3) (3) 3c Method 3161 of MIL-STD-750 (see 4.3.4) Method 3161 of MIL-STD-750 (see 4.3.4) 9 IGSSF1, IGSSR1, IDSS1, subgroup 2 of table I herein Subgroup 2 of table I herein 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, I

44、DSS1, rDS(on)1, VGS(th)1Subgroup 2 of table I herein. IGSSF1= +20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= -20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(on)

45、1, VGS(th)1Subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A or TA= +175C and t = 48 hours 13 Subgroup 2 and 3 of table I herein. IGSSF1= +20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= -20 nA dc or 100

46、 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value. VGS(th)1= 20 percent of initial value. Subgroup 2 of table I herein. IGSSF1= +20 nA dc or 100 percent of initial value, whichever is greater.

47、IGSSR1= -20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value. VGS(th)1= 20 percent of initial value. 17 For TO-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.5), Endpoints: Su

48、bgroup 2 of table I herein. For TO-254AA packages: Method 1081 of MIL-STD-750 (see 4.3.5), Endpoints: Subgroup 2 of table I herein. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV do not need to be repeated in screening requirements. * * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/595K