DLA MIL-PRF-19500 590 J-2012 SEMICONDUCTOR DEVICE DIODE SILICON ULTRAFAST RECOVERY POWER RECTIFIER 1N6626 THROUGH 1N6631 1N6626U THROUGH 1N6631U 1N6626US THROUGH 1N6631US JAN JANTX.pdf

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1、 MIL-PRF-19500/590J 4 June 2012 SUPERSEDING MIL-PRF-19500/590H 4 December 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, 1N6626 THROUGH 1N6631, 1N6626U THROUGH 1N6631U, 1N6626US THROUGH 1N6631US, JAN, JANTX, JANTXV, AND JANS This speci

2、fication is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a silicon

3、, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figures 1 (similar to DO-41) and 2 (surface mount). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. 1.3

4、.1 Ratings applicable to all types. Ratings applicable to all part or identifying numbers (PIN). TSTG= -65C to +175C. TJ= +150C maximum. 1.3.2 Ratings applicable to individual types. Col. 1 Col. 2 Col. 3 Col. 4 Col. 5 Col 6 Col. 7 Col. 8 Col. 9 Col. 10 Types VRWM IOLat TL = +75C (1) (2) (3) IO2at TA

5、=+25C (1) (4) (5) IFSMat tp= 8.3 ms Baro- metric pressure trr (6) RJLat L = .375 inch (9.52 mm) (7) RJECRJX1N6626, U, US 1N6627, U, US 1N6628, U, US 1N6629, U, US 1N6630, U, US 1N6631, U, US V dc 200 400 600 800 900 1,000 A 2.3 2.3 2.3 1.8 1.8 1.8 A 1.75 1.75 1.75 1.40 1.40 1.40 A(pk) 75 75 75 75 75

6、 60 mm Hg 8 8 8 33 33 33 ns 30 30 30 50 50 60 C/W 22 22 22 22 22 22 C/W 6.5 6.5 6.5 6.5 6.5 6.5 C/W 50 50 50 50 50 50 See notes on next page. AMSC N/A FSC 5961INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Col

7、umbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with

8、this revision shall be completed by 4 September 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/590J 2 1.3.2 Maximum ratings - Continued. (1) Average current with a half-sine wave including reverse voltage amplitude equal to the m

9、agnitude of the full rated VRWM. (2) Derate linearly 1.33 percent/C for TL +75C. (3) These rated currents also apply to U or US suffix types when the maximum temperature of the end-caps (mounting surface) is +110C; derate linearly 2.5 percent/C above TEC +110C. (4) Derate linearly 0.80 percent/C for

10、 TA +25C. (5) The 1.4 amp rating at +25C ambient is for thermal (PC boards or other) mounting methods where thermal resistance from mounting point to ambient is still sufficiently controlled where TJ(MAX) in 1.3.1 is not exceeded. This equates to RJX 50C/W as shown. Also see application notes in 6.5

11、.1 for the worst-case 1N6631. (6) The reverse recovery time (method 4031 of MIL-STD-750, condition B) at TJ= +125C shall not exceed three times the +25C limit. Exceeding TJ= +125C may change reverse recovery times at +25C to higher levels as indicated in accelerated life testing in 4.4.2.1 B5 for JA

12、NS or other life testing in 4.4.2.2 B3 and 4.4.3.1 C6. (7) See figures 3 and 4 for thermal impedance curves. 1.4 Primary electrical characteristics. Unless otherwise noted, TA= + 25C. Col. 1 Col. 2 Col. 3 Col. 4 Col. 5 Col. 6 Col. 7 Types IR1 at TJ = +25C IR2 at TJ = +150C IRM(REC) at 2 A, 100 A/s C

13、Tat VR= +10 V VFM1at IF1VFM2at IF2VFM1IF1VFM2 IF21N6626, U, US 1N6627, U, US 1N6628, U, US 1N6629, U, US 1N6630, U, US 1N6631, U, US A 2.0 2.0 2.0 2.0 2.0 4.0 A 500 500 500 500 500 600 A pk 3.5 3.5 3.5 4.2 4.2 5.0 pF 40 40 40 40 40 40 V 1.5 1.5 1.5 1.7 1.7 1.95 A 4.0 4.0 4.0 3.0 3.0 2.0 V 1.35 1.35

14、1.35 1.40 1.40 1.60 A 2.0 2.0 2.0 1.4 1.4 1.4 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/590J 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The BL dimension shall include the entire

15、 body including slugs and sections of the lead over which the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. 4. Dimension BD shall be measured at the largest diameter. 5. In accordance with

16、ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (similar to DO-41). Dimensions Ltr Inches Millimeters Min Max Min Max Notes BD .115 .137 2.92 3.48 4 BL .130 .300 3.30 7.62 3 LD .037 .042 0.94 1.07 3 LL .900 1.300 22.86 33.02 Provided by IHSNot for ResaleNo reprodu

17、ction or networking permitted without license from IHS-,-,-MIL-PRF-19500/590J 4 Dimensions Ltr 1N6626U, US through 1N6631U, US Inches Millimeters Min Max Min Max BL .200 .225 5.08 5.72 BD .137 .148 3.48 3.76 ECT .019 .028 0.48 0.71 S .003 0.08 NOTES: 1. Dimensions are in inches. 2. Millimeters are g

18、iven for general information only. 3. Dimensions are pre-solder dip. 4. The “S” dimension is the minimum clearance of glass body to mounting surface on all orientations. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimension of surface mount. Provide

19、d by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/590J 5 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other

20、 sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specificat

21、ion, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited

22、 in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.m

23、il/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and t

24、he references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 an

25、d as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviati

26、ons, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: EC End-cap. IRM(REC). Peak reverse recovery current. TCVF. Temperature coefficient of forward voltage. VFRMForward recovery voltage. 3.4 Interface and physical di

27、mensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figures 1 (similar to DO-41) and 2 (surface mount) herein. 3.4.1 Lead finish. Unless otherwise specified, lead or end cap finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein

28、. When solder alloy is used for finish the maximum lead temperature is limited to 175C maximum. Where a choice of finish is desired, it shall be specified in the acquisition document (see 6.2). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-

29、19500/590J 6 3.4.2 Diode construction. These devices shall be constructed utilizing non-cavity double plug construction with high temperature metallurgical bonding between both sides of the silicon die and terminal pins (see MIL-PRF-19500). Metallurgical bond shall be in accordance with the requirem

30、ents of category I in MIL-PRF-19500. U and US version devices shall be structurally identical to the non-surface mount devices except for lead terminations. The US version shall be structurally identical to the U version. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.5.1 Marking

31、for U and US devices. For U and US version devices only, all marking may be omitted from the device except for the cathode marking. All marking which is omitted from the body of the device shall appear on the label of the initial container. 3.6 Polarity. The polarity of all types shall be indicated

32、with a contrasting color band to denote the cathode end. Alternatively, for U and US suffix devices, a minimum of three contrasting color dots spaced around the periphery on the cathode end of the device may be used. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the

33、electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform

34、in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conforman

35、ce inspection (see 4.4 and tables I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E qualification shall be performed herein for qualification or requalification only. In case

36、 qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot to this revision to maintain qualifica

37、tion. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/590J 7 * 4.3 Screening (JANS, JANTX, and JANTXV levels). Screening shall be in accordance with appendix E, table E-IV of MIL-PRF-19500, and as specified herein. The following measure

38、ments shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see appendix E, table E-IV of MIL-PRF-19500) Measurement JANS level JANTXV and JANTX level 1a 1b Required Required Not required Required (JANTXV only) 2 Optional O

39、ptional 3a (1) 3c Required Thermal impedance (see 4.3.1) Required Thermal impedance (see 4.3.1) 4 Not applicable Not applicable 5 Not applicable Not applicable 6 Not applicable Not applicable 7a 7b Not applicable Optional Not applicable Optional 8 Required Not required 9 Required IR1and VFM1Not requ

40、ired 10 Method 1038 of MIL-STD-750, condition A Method 1038 of MIL-STD-750, condition A 11 IR1and VFM1, IR1= 400 nA dc (800 nA dc for 1N6631) or 100 percent of initial reading; whichever is greater. VFM1 0.05 V dc IR1and VFM112 Required, see 4.3.2 Required, see 4.3.2 (2) 13 Subgroups 2 and 3 of tabl

41、e I herein: IR1= 400 nA dc (800 nA dc for 1N6631) or 100 percent of initial reading; whichever is greater; VFM1= 0.05 V dc; scope display evaluation, method 4023 of MIL-STD-750, see 4.5.4 Subgroup 2 of table I herein: IR1= 400 nA dc (800 nA dc for 1N6631) or 100 percent of initial reading; whichever

42、 is greater; VFM1= 0.05 V dc; scope display evaluation, method 4023 of MIL-STD-750, see 4.5.4 14a (3) 14b Not applicable Required Not applicable Required 15 Required Not required 16 Required Not required * (1) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels d

43、o not need to be repeated in screen 13. (2) ZJXis not required in screen 13, if already previously performed. (3) For glass diodes, the hermetic seal (gross leak) may be performed any time after temperature cycling. 4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in ac

44、cordance with method 3101 or 4081 as applicable of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and K factor where appropriate). Measurement delay time (tMD) = 70 s max. See group E, subgroup 4and figures 3 and 4 herein. 4.3.2 Free air power burn-in conditions. Power b

45、urn-in conditions are as follows (see 4.5.3.1): TA= +55C maximum. Test conditions in accordance with method 1038 of MIL-STD-750, condition B. Adjust IOor TAto achieve the required TJ. Use method 3100 of MIL-STD-750 to measure TJ. TJ= +115C minimum and +150C maximum. With approval of the qualifying a

46、ctivity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essen

47、tial criteria for burn-in modification approval. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/590J 8 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A

48、inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, tables E-VIA (JANS) and E-VIB (JAN, JANTX and JANTXV)

49、 of MIL-PRF-19500 and 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table III herein. 4.4.2.1 Group B inspection, appendix E, table E-VIA (JANS) of MIL-PRF-19500. For B5, if a failure occurs, resubmission shall