DLA MIL-PRF-19500 585 J-2010 SEMICONDUCTOR DEVICE DIODE SILICON ULTRA-FAST RECOVERY POWER RECTIFIER 1N6620 THROUGH 1N6625 1N6620U THROUGH 1N6625U 1N6620US THROUGH 1N6625US JAN JANT.pdf

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1、 MIL-PRF-19500/585J 21 November 2010 SUPERSEDING MIL-PRF-19500/585H 20 October 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, 1N6620 THROUGH 1N6625, 1N6620U THROUGH 1N6625U, 1N6620US THROUGH 1N6625US, JAN, JANTX, JANTXV, AND JANS This

2、 specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a s

3、ilicon, ultra-fast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figures 1 (similar to DO-41) and 2 (surface mount). 1.3 Maximum ratings. Unless otherwise specified, TA= +2

4、5C. 1.3.1 Ratings applicable to all types. Ratings applicable to all Part or Identifying Numbers (PIN). TSTG= -65C to +175C, TJ= +150C maximum. 1.3.2 Ratings applicable to individual types. Col. 1 Col. 2 Col. 3 Col. 4 Col. 5 Col. 6 Col. 7 Col. 8 Col. 9 Col. 10 Device type VRWMIO(L)at TL= +55C L = .3

5、75 inch (9.52 mm) (1) (2) (3) IO2TA= +25C max (1) (4) (5) IFSMat tp= 8.3 ms Barometric pressure trr (6) RJL at L = .375 inch (9.52 mm) (7) RJEC (8) RJXV dc A A A pk mm Hg ns C/W C/W C/W 1N6620, U, US 1N6621, U, US 1N6622, U, US 1N6623, U, US 1N6624, U, US 1N6625, U, US 200 400 600 800 900 1,000 2.0

6、2.0 2.0 1.5 1.5 1.5 1.2 1.2 1.2 1.0 1.0 1.0 20 20 20 20 20 15 8 8 8 33 33 33 30 30 30 50 50 60 38 38 38 38 38 38 13 13 13 13 13 13 55 55 55 55 55 55 See notes on next page. * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990,

7、Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . AMSC N/A FSC 5961 INCH-POUND The documentation and process conversi

8、on measures necessary to comply with this document shall be completed by 21 February 2011. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/585J 2 1.3.2 Maximum ratings Continued. (1) Average current with a half-sine wave including rever

9、se voltage amplitude equal to the magnitude of the full rated VRWM. (2) Derate linearly 1.05 percent/C for TL +55C. (3) These rated currents also apply to U or US suffix types when the maximum temperature of the end-caps (mounting surface) is +110C; derate linearly 2.5 percent/C above TEC +110C. (4)

10、 Derate linearly 0.80 percent/C for TA +25C. (5) The 1 A rating at +25C ambient is for thermal mounting methods (PC boards or other) where thermal resistance from mounting point to ambient is still sufficiently controlled where TJ(MAX)in 1.3.1 is not exceeded. This equates to RJX 55C/W as shown. Als

11、o see application notes in 6.5.1 for the worst-case for 1N6625. (6) The reverse recovery time (method 4031 of MIL-STD-750, condition B) at TJ= +125C will not exceed three times the +25C limit. Exceeding TJ= +125C may change reverse recovery times at +25C to higher levels as indicated in accelerated

12、life testing in 4.4.2.1, subgroup B5 for JANS, or other life testing in 4.4.2.2, subgroup B3, and 4.4.3.1, subgroup C6. (7) See figure 3, thermal resistance curves for axial leaded devices only (no suffix). (8) See figure 4, thermal resistance curves for surface mount devices only (U and US suffix).

13、 1.4 Primary electrical characteristics. Unless otherwise specified, TA= +25C. Col. 1 Col. 2 Col. 3 Col. 4 Col. 5 Col. 6 Col. 7 Device type IR1at TJ= +25C IR2at TJ= +150C IRM(REC)at 2 A, 100 A/s CTat VR= 10 V VFM1at IF= Col. 3 VFM2at IF= Col. 4 A A A pk pF V V 1N6620, U, US 1N6621, U, US 1N6622, U,

14、US 1N6623, U, US 1N6624, U, US 1N6625, U, US 0.5 0.5 0.5 0.5 0.5 1.0 150 150 150 150 150 200 3.5 3.5 3.5 4.2 4.2 5.0 10 10 10 10 10 10 1.60 1.60 1.60 1.80 1.80 1.95 1.40 1.40 1.40 1.55 1.55 1.75 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF

15、-19500/585J 3 Ltr Dimensions Notes Inches Millimeters Min Max Min Max BD .065 .085 1.65 2.16 4 BL .125 .250 3.18 6.35 3 LD .027 .032 0.69 0.81 3 LL .700 1.30 17.78 33.02 NOTES: (1) Dimensions are in inches. (2) Millimeters are given for general information only. (3) Dimension BL shall include the se

16、ctions of the lead over which the diameter is uncontrolled. This uncontrolled area is defined as the zone between the edge of the diode body and extending .050 inch (1.27 mm) onto the leads. (4) Dimension BD shall be measured at the largest diameter. (5) In accordance with ASME Y14.5M, diameters are

17、 equivalent to x symbology. FIGURE 1. Physical dimensions (similar to DO-41). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/585J 4 Dimensions 1N6620U,US through 1N6625U, US Ltr Inches Millimeters Notes Min Max Min Max BD .091 .103 2.3

18、1 2.62 BL .168 .200 4.27 5.08 ECT .019 .028 0.48 0.71 S .003 0.08 NOTES: (1) Dimensions are in inches. (2) Millimeters are given for general information only. (3) In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions of surface mount. Provided by IHSN

19、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/585J 5 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections

20、 of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whet

21、her or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the s

22、olicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicks

23、earch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the referenc

24、es cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modifi

25、ed herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbol

26、s, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: EC End-cap. IRM(REC). Peak reverse recovery current. TCVF. Temperature coefficient of forward voltage. VFRMForward recovery voltage. 3.4 Interface and physical dimensions. T

27、he interface and physical dimensions shall be as specified in MIL-PRF-19500 and figures 1 (similar to DO-41) and 2 (surface mount) herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/585J 6 3.4.1 Lead finish. Unless otherwise specif

28、ied, lead or end cap finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. When solder alloy is used for finish the maximum lead temperature is limited to +175C maximum. Where a choice of finish is desired, it shall be specified in the acquisition document (see 6.2).

29、3.4.2 Diode construction. These devices shall be constructed utilizing non-cavity double plug construction with high temperature metallurgical bonding between both sides of the silicon die and terminal pins (see MIL-PRF-19500). Metallurgical bond shall be in accordance with the requirements of categ

30、ory I in MIL-PRF-19500. U and US version devices shall be structurally identical to the non-surface mount devices except for lead terminations. The US version shall be structurally identical to the U version. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electric

31、al performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.7 Marking. Devices shall be marked as specified in MIL-PRF-19500. 3.7.1 Marking for U and US devic

32、es. For U and US version devices only, all marking may be omitted from the device except for the cathode marking. All marking which is omitted from the body of the device shall appear on the label of the initial container. 3.8 Polarity. The polarity of all types shall be indicated with a contrasting

33、 color band to denote the cathode end. Alternatively, for U suffix devices, a minimum of three contrasting color dots spaced around the periphery on the cathode end of the device may be used. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and s

34、hall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (s

35、ee 4.4 and table I). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E qualification shall be performed herein for qualification or requalification only. In case qualification was awarded to

36、a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot to this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted w

37、ithout license from IHS-,-,-MIL-PRF-19500/585J 7 4.3 Screening (JANS, JANTX, AND JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits

38、 of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTXV and JANTX level (1) 3c Thermal impedance (see 4.3.1) Thermal impedance (see 4.3.1) 5 Not applicable Not applicable 9 Required IR1and VFM1Not required 10 Method 1038 of MIL-STD-750, cond

39、ition A Method 1038 of MIL-STD-750, condition A 11 IR1and VFM1, IR1 100 percent of initial reading or 100 nA dc ( 200 nA dc for 1N6625), whichever is greater. VFM1 0.05 V dc IR1and VFM112 Required, see 4.3.2 Required, see 4.3.2 (2) 13 Subgroups 2 and 3 of table I herein: IR1 100 percent of initial r

40、eading or 100 nA dc (200 nA dc for 1N6625), whichever is greater. VFM1 0.05 V dc. Scope display evaluation (see 4.5.4) Subgroup 2 of table I herein: IR1 100 percent of initial reading or 100 nA dc (200 nA dc for 1N6625), whichever is greater. VFM1 0.05 V dc. Scope display evaluation (see 4.5.4) (1)

41、Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in accordance with MIL-PRF-19500, screen 3 prior to this thermal test. (2) ZJXis not required in screen 13, if already previously performed. 4.3.1 Thermal impedance. The thermal impedance measuremen

42、ts shall be performed in accordance with method 3101 as applicable of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and K factor. See table II, group E, subgroup 4 herein. 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows (see 4.5.3, 4.5.3.1) TA= +

43、55C maximum. Test conditions in accordance with method 1038 of MIL-STD-750, condition B. Adjust IOto achieve the required TJ. Use method 3100 of MIL-STD-750 to measure TJ. TJ = +115C minimum and +150C maximum. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

44、IHS-,-,-MIL-PRF-19500/585J 8 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B in

45、spection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500 and 4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta mea

46、surements shall be in accordance with table III herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. For B5, if a failure occurs, resubmission shall be at the test conditions of the original sample. Subgroup Method Condition B3 1056 -0C to +100C, 25 cycles. B3 1051 -55C to +175C,

47、 100 cycles. B3 4066 IFSM= rated IFSM(see 1.3, col. 5); ten surges of 8.3 ms each at 1 minute intervals, superimposed on IO= 0, VRWM= 0. B4 1037 IO= IOrated minimum (see 1.3, col. 4); VR= rated VRWM(see col. 2 of 1.3, and 4.5.3); 2,000 cycles. B5 1027 IO= IOrated minimum (see 1.3, col. 4 and 4.5.3);

48、 adjust TAand or IOto achieve TJ= +150C minimum. t = 1,000 hours. Temporary leads may be added for surface mount devices. n = 45, c = 0. For irradiated devices, include trras an end-point measurement. Delta shall not exceed 60 percent of initial reading. B6 4081 See 4.5.5, +25C TA +35C (recorded bef

49、ore test is performed); RJL(maximum) 38C/W; L = .375 inch (9.53 mm). For surface mount devices (U and US version), RJEC= 13C/W maximum. B8 4065 Peak reverse power, PRM 318 W for square wave in accordance with method 4065 of MIL-STD-750 (PRM 500 W for half-sine wave). Test shall be performed on each sublot