DLA MIL-PRF-19500 567 E-2012 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY BARRIER FAST RECOVERY TYPE 1N6492 1N6492U4 JAN JANTX JANTXV AND JANS.pdf

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1、 MIL-PRF-19500/567E 10 December 2012 SUPERSEDING MIL-PRF-19500/567D 8 February 2008 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY, TYPE 1N6492, 1N6492U4, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments a

2、nd Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, fast recovery, Schottky barrier, semiconductor di

3、ode. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-205AF, formerly low profile TO-39), and figure 2 (U4). 1.3 Maximum ratings. Type VRRMand VRWM(1) VRSMVR(1) IF1 (AV) TA= +25C (2) IF1 (AV) TC= +100C (3) IOT

4、C= +100C (4) IFSMRJC(5) RJA (5) TJand TSTG1N6492 1N6492U4 V (pk) 45 45 V (pk) 54 54 V dc 45 45 A dc 1.20 1.20 A dc 4 4 A dc 3.60 3.60 A (pk) 80 80 C/W 12.0 12.0 C/W 175 175 C -65 to +175 (1) Full rated VRRMand VRWMwith appropriate average forward current (see note (3) is applicable over the range of

5、 TCfrom -55C to +135C. Full rated VRis applicable over the range of TCfrom -55C to +120C. With these maximum voltages and case temperatures, TJ +175C. (2) This rating requires no special mounting, heat sinking, or forced air flow across the device. (3) Average current with a 50 percent duty cycle sq

6、uare wave including reverse voltage amplitude equal to the magnitude of full rated VRWM. Derate linearly at 114 mA dc/C for TC +100C (to 0 at TC= +135C); if VRWM= 20, derate IF(AV) at 62 mA/C, to 0 at TC= +165C. (4) Average current with an applied sine wave including reverse voltage equal to the mag

7、nitude of full rated VRWM. Derate linearly at 103 mA dc/C for TC +100C; if VRWM= 20, derate at 55 mA/C. (5) For thermal impedance see figure 3. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990,

8、Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with th

9、is revision shall be completed by 10 March 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/567E 2 * 1.4 Primary electrical characteristics at TA= +25C, unless otherwise indicated. Type VFM2IFM= 4 A (pk) VFM3IFM= 2 A (pk) IRMVRM =

10、45 V (pk) TA= +125C IRMVRM= 45 V (pk) TA= +25C CTVR= 5 V dc 1N6492 1N6492U4 V (pk) .68 .68 V (pk) .56 .56 mA (pk) 20 20 mA (pk) 2.0 2.0 pF 450 450 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does n

11、ot include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sec

12、tions 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues

13、 of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available

14、 online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the

15、text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as sp

16、ecified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4

17、.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 and 2 herein. Provid

18、ed by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/567E 3 Dimensions Notes Ltr Inches Millimeters Min Max Min Max CD .305 .335 7.75 8.51 CH .160 .180 4.07 4.57 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP 7 LD .016 .021 0.41 0.53 8, 9 LL .500 .750

19、12.7 19.05 8, 9 LU .016 .019 0.41 0.48 8, 9 L1.050 1.27 8, 9 L2.250 6.35 8, 9 P .100 2.54 6 Q .040 1.02 5 r .010 0.254 10 TL .029 .045 0.74 1.14 TW .028 .034 0.72 0.86 45 TP 45 TP 7 Term 1 Anode Term 2 Open (no connection) Term 3 Cathode (case) NOTES: 1. Dimensions are in inches. 2. Millimeters are

20、given for general information only. 3. Beyond radius (r) maximum, TW shall be held for a minimum length of .011 inch (0.279 mm). 4. Dimension TL measured from maximum HD. 5. Outline in this zone is not controlled. 6. Dimension CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is c

21、ontrolled for automatic handling. 7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 8. LU

22、 applies between L1and L2. LD applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 9. All three leads. 10. Radius (r) applies to both inside corners of tab. 11. Cathode is electrically connected to the case. 12. In accordance with ASME Y14.5M, diameters are equivale

23、nt to x symbology. FIGURE 1. Physical dimensions (TO-205AF - formerly low profile TO-39). TO-39 3 1 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/567E 4 Symbol Dimensions Inches Millimeters Min Max Min Max BL 0.215 0.225 5.46 5.72 BW

24、0.145 0.155 3.68 3.94 CH 0.049 0.075 1.24 1.91 LH - 0.020 - 0.508 LL1 0.085 0.125 2.16 3.17 LL2 0.045 0.075 1.14 1.90 LS1 0.070 0.095 1.78 2.41 LS2 0.035 0.048 0.889 1.21 LW1 0.135 0.145 3.43 3.68 LW2 0.047 0.057 1.19 1.45 Q1 0.030 0.070 0.762 1.78 Q2 0.020 0.035 0.508 0.88 TERM 1 Cathode TERM 2 Ano

25、de 1 TERM 3 Anode 2 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions and configuration (U4). U4 2, 3 1 Provided by IHSNot for ResaleNo reproduction or n

26、etworking permitted without license from IHS-,-,-MIL-PRF-19500/567E 5 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical pe

27、rformance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.7 Marking. Marking shall

28、 be in accordance with MIL-PRF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection re

29、quirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). * c. Conformance inspection (see 4.4 and table I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed

30、for qualification inspection in accordance with figure 4 of MIL-PRF-19500. * 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the perfor

31、mance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,

32、-MIL-PRF-19500/567E 6 * 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall

33、not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1) 3c Thermal impedance (see 4.3.2). Thermal impedance (see 4.3.2). 9 Reverse energy test (see 4.5.2) VFM2, IRM1. Not applicable. 10 TC= +130C. TC= +130C. 11 Reverse energy test (see 4.5.2), V

34、FM250 mV of initial value, IRM1100 percent or 500 A, whichever is greater. Reverse energy test (see 4.5.2), VFM2, IRM1. 12 See 4.3.1. See 4.3.1. 13 Subgroup 2 of table I herein. Reverse energy test (see 4.5.2), VFM250 mV, IRM1100 percent or 500 A, whichever is greater. Scope display evaluation (see

35、4.5.5). Subgroup 2 of table I herein. Reverse energy test (see 4.5.2), VFM250 mV, IRM1100 percent or 500 A, whichever is greater. Scope display evaluation (see 4.5.5). * (1) Shall be performed anytime after temperature cycling, screen 3a. JANTX and JANTXV levels do not need to be repeated in screeni

36、ng requirements. * 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA= +50C maximum, any clips or heat sink configuration may be utilized provided that IOand TAare adjusted to achieve TJ= +135C minimum, VR= 45 V (pk), IO= 0.75 A minimum, f = 60 Hz. Mounting and test conditio

37、ns shall be in accordance with Method 1038 of MIL-STD-750 , test condition B. * 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3101 or 4081 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, and tMD. Measurement de

38、lay time (tMD) = 70 s max. See table III, subgroup 4. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for qualification inspection in accordance with figure 4 of MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall

39、be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables E-VIA (JANS) and E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 and 4.4.2.2 herein

40、. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500

41、/567E 7 * 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Temperature cycling, condition C, TLOW= -55C, THIGH= +175C. B4 1037 IO= 0.75 A, TA= +25C; VRM= 45 V, ton= toff= 3 minutes for a minimum of 2,000 cycles. B5 1027 IF= 3.2 A dc minimum adjust TA

42、or IFas required IFor TAto achieve a lot TJ= +275C. * 4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV of MIL-PRF-19500). Subgroup Method Condition B2 1051 Temperature cycling, condition C. B3 1027 TA= +25C, IO= 0.75 A, VRM= 45 V (pk). B3 2037 Condition A, all internal wires must be p

43、ulled separately. B6 1032 TA= +175C. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2

44、herein. Delta measurements shall be in accordance with table II herein. Subgroup Method Condition * C5 3101 See 4.5.3, RJC 12.0C/W. or 4081 C6 1026 IO= 0.75 A, VRWN= 45 V(pk), TA= +25C. C6 Operational power cycling, see 4.5.6, TC(LOW)= +40C, +0, -15C; TC(HIGH)= +115C +5, -0C, 5,000 cycles, n = 22, c

45、 = 0. * 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. P

46、rovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/567E 8 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurements shall be as s

47、pecified in section 4 of MIL-STD-750. 4.5.2 Peak reverse energy test. The peak reverse energy test is to be performed as shown on figure 4 or equivalent. The diode under test must be capable of absorbing the reverse energy, as defined, and meet the electrical requirements of table I, subgroup 4 here

48、in. 4.5.3 Thermal resistance. Thermal resistance shall be measured in accordance with method 4081 of MIL-STD-750. The case reference temperature shall be held to equilibrium within the range of +20C to +70C during the power application, and shall be measured at the hottest part of the case. The foll

49、owing measurements shall apply: IF1= 1 A, at 97 percent minimum duty factor; IF2= 10 mA dc. 4.5.4 Reverse current at peak reverse voltage, alternate test. The reverse current at peak reverse voltage test may be satisfied by performing the reverse energy test of 4.5.2 and measuring breakdown voltage to ensure V(BR) 54 V (p