DLA MIL-PRF-19500 564 H-2009 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR P-CHANNEL SILICON TYPES 2N6849 2N6849U 2N6851 AND 2N6851U JAN JANTX JANTXV JANS JANHC AND JANKC.pdf

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1、 MIL-PRF-19500/564H 2 June 2009 SUPERSEDING MIL-PRF-19500/564G 13 June 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6849, 2N6849U, 2N6851 AND 2N6851U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use

2、by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET,

3、 power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. * 1.2 Physical dimensions. See figure 1, TO-205AF (formerly TO-39), 2 (LCC), and figures

4、 3 and 4 for JANHC and JANKC die dimensions. * 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type PT(1) TC= +25C PTTA= +25C RJC (2) VDSVDGVGSID1(3) (4)TC= +25C ID2(3) (4)TC= +100C ISIDM(5) TJ and TSTGW W C/W V dcV dcV dc A dc A dc A dc A (pk) C 2N6849, 2N6849U 25 0.8 5.0 -100 -100 20 -6

5、.5 -4.1 -6.5 -25 -55 to +1502N6851, 2N6851U 25 0.8 5.0 -200 -200 20 -4.0 -2.4 -4.0 -20 -55 to +150(1) Derate linearly by 0.2 W/C for TC +25C. (2) See figure 5, thermal impedance curves. (3) The following formula derives the maximum theoretical IDspec. IDis limited by package and device construction.

6、 (4) See figure 6, maximum drain current graphs. (5) IDM= 4 x ID1as calculated in note 2. AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Se

7、miconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil/. Tat )on (Rx RT- T= IJMDSJCCJMDThe documentation and process conversion measures necessary to comply with this

8、 revision shall be completed by 2 September 2009. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/564H 2 1.4 Primary electrical characteristics. Unless otherwise specified, TC= +25C. Type Min V(BR)DSSVGS= 0 ID= -1 mA dc VGS(th)1VDS VGSI

9、D= -0.25 mA Max IDSS1VGS= 0 VDS= 80 Max rDS(on)1(1) VGS= -10 V dc ID= ID2percent of rated VDSTJ= +25C TJ= +150C V dc V dc Min Max A dc ohm ohm 2N6849, 2N6849U -100 -2.0 -4.0 -25 0.30 0.60 2N6851, 2N6851U -200 -2.0 -4.0 -25 0.80 1.68 (1) Pulsed, (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The d

10、ocuments listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of t

11、his list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, an

12、d handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEF

13、ENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

14、 * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless

15、 a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/564H 3 NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Beyond radius (r) maximum, TW shall be held for a

16、 minimum length of .011 (0.28 mm). 3. Dimension TL measured from maximum HD. 4. Outline in this zone is not controlled. 5. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm)

17、below seating plane shall be within .007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. LU applies between L1and L2. LD applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. Radius (r) appl

18、ies to both inside corners of tab. 10. Drain is electrically connected to the case. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 12. Lead 1 = source, lead 2 = gate, lead 3 = drain. FIGURE 1. Physical dimensions for TO-205AF (2N6849 and 2N6851). Dimensions Ltr Inches M

19、illimeters Notes Min Max Min Max CD .305 .335 7.75 8.51 CH .160 .180 4.07 4.57 HD .335 .370 8.51 9.39 LC .200 TP 5.08 TP 6 LD .016 .021 0.41 0.53 7, 8 LL .500 .750 12.7 19.05 7, 8 LU .016 .019 0.41 0.48 7, 8 L1.050 1.27 7, 8 L2.250 6.35 7, 8 P .100 2.54 5 Q .050 1.27 4 r .010 0.25 9 TL .029 .045 0.7

20、4 1.14 3 TW .028 .034 0.72 0.86 2 45 TP 45 TP 6 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/564H 4 Dimensions Sym. Inches Millimeters Min Max Min Max BL .345 .360 8.77 9.14 BW .280 .295 7.11 7.49 CH .095 .115 2.41 2.92 LL1 .040 .055

21、 1.02 1.40 LL2 .055 .065 1.40 1.65 LS .050 BSC 1.27 BSC LS1 .025 BSC 0.635 BSC LS2 .008 BSC 0.203 BSC LW .020 .030 0.51 0.76 Q1 .105 REF 2.67 REF Q2 .120 REF 3.05 REF Q3 .045 .055 1.14 1.40 TL .070 .080 1.78 2.03 TW .120 .130 3.05 3.30 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for

22、 general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 2. Physical dimensions for LCC (2N6849U and 2N6851U). 181Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/564H 5 2N6849 and 2N6

23、851 Dimensions Ltr 2N6849 2N6851 Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max A .106 .122 2.69 3.10 .108 .124 2.74 3.15 B .172 .188 4.37 4.78 .173 .189 4.39 4.80 C .021 .029 0.53 0.74 .022 .030 0.56 0.76 D .035 .043 0.89 1.09 .030 .038 0.76 0.97 E .028 .036 0.71 0.91 .021 .0

24、29 0.53 0.74 F .014 .022 0.36 0.56 .012 .020 0.30 0.51 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The physical characteristics of the die are: The back metals are chromium, nickel, and silver and comprise the drain. The top metal is aluminum. 4. Die

25、 thickness is .0187 inch (0.475 mm), the tolerance is .0050 inch (0.13 mm). FIGURE 3. JANHCA and JANKCA die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/564H 6 2N6849 Dimensions Ltr 2N6849 Inches Millimeters Min Max Min M

26、ax A .116 .120 2.95 3.05 B .181 .185 4.60 4.70 C .032 .034 0.81 0.86 D .035 .037 0.89 0.94 E .024 .026 0.61 0.66 F .018 .019 0.46 0.48 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The physical characteristics of the die are: The back metals are chromi

27、um, nickel, and silver and comprise the drain. The top metal is aluminum. 4. Die thickness is .015 inch (0.381 mm), the tolerance is .0010 inch (0.025 mm). * FIGURE 4. JANHCB die dimensions (2N6849 only). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,

28、-,-MIL-PRF-19500/564H 7 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying ac

29、tivity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: IAS.Rated avalanche current, nonrep

30、etitive. nC .nano Coulomb. * 3.4 Interface and physical dimensions. The Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 (TO-205AF), 2 (LCC), and 3 and 4 (JANHC/JANKC die) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-

31、19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Internal construction. Multiple chip construction shall not be permitted. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the

32、manufacturer, marking of country of origin may be omitted from the body of the transistor, but shall be retained on the initial container. 3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. 3.6.1 Handling. MOS devices must be handled w

33、ith certain precautions to avoid damage due to the accumulation of static charge. The following handling practices shall be followed: a. Devices shall be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by

34、the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. h. Ga

35、te must be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in paragraph 1.3, 1.4, and table I. 3.8 Electrical test require

36、ments. The electrical test requirements shall be as specified in table I. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo

37、reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/564H 8 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (

38、see 4.4 and table I). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and table II herein. Alternate flow is allowed for qualification inspection in accordance with figure 4 of MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be pe

39、rformed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the

40、first inspection lot of this revision to maintain qualification. 4.2.2 JANHC and JANKC die. Qualification shall be in accordance with MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/564H 9 4.3 Screening (JANS, JANTX, and

41、JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of

42、MIL-PRF-19500) (1) (2) JANS level JANTX and JANTXV levels (3) Gate stress test (see 4.3.2) Gate stress test (see 4.3.2). (3) Method 3470 of MIL-STD-750 (see 4.3.3), optional Method 3470 of MIL-STD-750 (see 4.3.3), optional (3) 3c Method 3161 of MIL-STD-750 (see 4.3.4) Method 3161 of MIL-STD-750 (see

43、 4.3.4) 9 IGSSF1, IGSSR1, IDSS1, subgroup 2 of table 1 herein. Subgroup 2 of table 1 herein. 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1subgroup 2 of table I herein: IGSSF1= 20 nA dc or 100 percent of initi

44、al value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1subgroup 2 of table I herein: 12 Method 1042 of MIL-STD-750, test condition A, t = 24

45、0 hours Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein; IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is gr

46、eater. rDS(on)1= 20 percent of initial value. VGS(th)1= 20 percent of initial value. Subgroup 2 of table I herein; IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial

47、value, whichever is greater. rDS(on)1= 20 percent of initial value. VGS(th)1= 20 percent of initial value. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be perform

48、ed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/564H 10 4.3.1 Screening (JANHC and JANKC). Screening of die shall be in accordance with MIL-PRF-19500. As a minimum, die shall be 100-percent probed in accordance with table I, subgroup 2. 4.3.2 Gate stress test. Apply VGS= 30 V minimum for t = 250 s minimum. 4.3.3 Unclamped inductive switching. a. Peak current (ID) Rated ID