DLA MIL-PRF-19500 557 K-2012 SEMICONDUCTOR DEVICE FIELD EFFECT TRANSISTOR N-CHANNEL SILICON TYPES 2N6796 2N6796U 2N6798 2N6798U 2N6800 2N6800U 2N6802 AND 2N6802U JAN JANTX JANTXV J.pdf

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1、 MIL-PRF-19500/557K 7 August 2012 SUPERSEDING MIL-PRF-19500/557J 19 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, AND 2N6802U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This

2、 specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a N

3、-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated dev

4、ice type. 1.2 Physical dimensions. See figure 1, TO-205AF (formerly TO-39), figure 2 (LCC), and figures 3, 4, and 5 for JANHC and JANKC die dimensions. 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type (1) PT(2) TC= +25C PTTA= +25C RJC(3) VDSVDGVGSID1(4) (5) TC= +25C ID2(4) TC= +100C I

5、SIDM(6) TJand TSTGVISO70,000 foot altitude 2N6796 2N6798 2N6800 2N6802 W 25 25 25 25 W 0.8 0.8 0.8 0.8 C/W 5.0 5.0 5.0 5.0 V dc 100 200 400 500 V dc 100 200 400 500 V dc 20 20 20 20 A dc 8.0 5.5 3.0 2.5 A dc 5.0 3.5 2.0 1.5 A dc 8.0 5.5 3.0 2.5 A(pk) 32 22 14 11 C -55 to +150 V dc 400 500 (1) Electr

6、ical characteristics for “U“ suffix devices are identical to the corresponding non“U“ suffix devices unless otherwise specified. (2) Derate linearly 0.2 W/C for TC +25C. (3) See figure 6, thermal impedance curves. (4) The following formula derives the maximum theoretical IDlimit. IDis also limited b

7、y package and internal wires and may be limited due to pin diameter. (5) See figure 7, maximum drain current graph. (6) IDM= 4 x ID1as calculated in note 4. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.

8、O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to c

9、omply with this revision shall be completed by 7 October 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/557K 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSS VGS= 0 V dc ID= 1.0 mA dc VGS(th)1 VDS VGSID= 0.

10、25 mA dc Max IDSS1VGS= 0 V dc Max rDS(on)(1) VGS= 10 V dc VDS= 80 percent of rated VDSTJ= +25C at ID2TJ= +150C at ID22N6796, U 2N6798, U 2N6800, U 2N6802, U V dc 100 200 400 500 V dc Min Max 2.0 4.0 2.0 4.0 2.0 4.0 2.0 4.0 A dc 25 25 25 25 ohm 0.18 0.40 1.00 1.50 ohm 0.39 0.84 2.78 4.00 (1) Pulsed (

11、see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While ever

12、y effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and

13、handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor

14、 Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Av

15、enue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, sup

16、ersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/557K 3 Dimensions Ltr Inches Millimeters Notes Min Max Min Max CD .305 .355 7.75 9.02 CH .160 .180 4.

17、07 4.57 HD .335 .370 8.51 9.39 h .009 .041 0.23 1.04 J .028 .034 0.72 0.86 2 k .029 .045 0.74 1.14 3 LD .016 .021 0.41 0.53 7, 8 LL .500 .750 12.7 19.05 7, 8 LS .200 TP 5.08 TP 6 LU .016 .019 0.41 0.48 7, 8 L1 .050 1.27 7, 8 L2 .250 6.35 7, 8 P .070 1.78 5 Q .050 1.27 4 r .010 0.25 9 45 TP 45 TP 6 N

18、OTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm). 3. Dimension k measured from maximum HD. 4. Outline in this zone is not controlled. 5. Dimension CD shall not vary more than .

19、010 (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. LU applies between

20、L1and L2. LD applies between L2and L minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. Radius (r) applies to both inside corners of tab. 10. Drain is electrically connected to the case. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FI

21、GURE 1. Physical dimensions for TO-205AF. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/557K 4 Dimensions Ltr Inches Millimeters Min Max Min Max BL .345 .360 8.77 9.14 BW .280 .295 7.11 7.49 CH .095 .115 2.41 2.92 LL1 .040 .055 1.02 1

22、.40 LL2 .055 .065 1.40 1.65 LS .050 BSC 1.27 BSC LS1 .025 BSC 0.635 BSC LS2 .008 BSC 0.203 BSC LW .020 .030 0.51 0.76 Q1 .105 REF 2.67 REF Q2 .120 REF 3.05 REF Q3 .045 .055 1.14 1.40 TL .070 .080 1.78 2.03 TW .120 .130 3.05 3.30 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for genera

23、l information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 4. Ceramic package only. FIGURE 2. Physical dimensions for LCC. 181Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/557K 5 2N6796 2N6798 2N68

24、00 and 2N6802 Inch mm Inch mm Inch mm .016 0.41 | .026 0.66 | .106 2.69 .018 0.46 | .031 0.79 | .116 2.95 .019 0.48 | .033 0.84 | .148 3.76 .0187 0.475 | .034 0.86 | .180 4.57 .025 0.64 | .041 1.04 | .181 4.60 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only.

25、 3. Unless otherwise specified, tolerance is .005 inch (0.13 mm). 4. The physical characteristics of the die are: the back metals are chromium, nickel, and silver. The top metal is aluminum and the back contact is the drain. 5. Die thickness is .0187 inch (0.475 mm). 6. Dimensions are in accordance

26、with ASME Y14.5M. FIGURE 3. JANHCA and JANKCA die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/557K 6 Dimensions - 2N6796 Dimensions - 2N6798 Ltr Inches Millimeters Inches Millimeters Min Max Min Max Min Max Min Max A .18

27、1 .185 4.60 4.70 .179 .183 4.55 4.65 B .116 .120 2.95 3.05 .114 .118 2.89 2.99 C .032 .034 .81 .86 .028 .030 .71 .76 D .017 .019 .43 .48 .018 .020 .46 .51 E .024 .026 .61 .66 .024 .026 .61 .66 F .035 .037 .89 .94 .033 .036 .84 .91 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for gene

28、ral information only. 3. Unless otherwise specified, tolerance is .005 inch (0.13 mm). 4. The physical characteristics of the die are: The back metals are chromium, nickel, and silver and the back contact is the drain. The top metal is aluminum. 5. Die thickness is .015 inch (0.38 mm) .001 inch (0.0

29、25 mm). FIGURE 4. JANHCB and JANKCB (B-version) die dimensions for 2N6796, 2N6798. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/557K 7 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Unle

30、ss otherwise specified, tolerance is .005 inch (0.13 mm). 4. The physical characteristics of the die are: The back metals are Titanium, nickel, and silver and the back contact is the drain. The top metal is aluminum. 5. Die thickness is .018 inch (0.46 mm) .001 inch (0.025 mm). FIGURE 5. JANHCC and

31、JANKCC (C-version) die dimensions for 2N6800, 2N6802. Dimensions - 2N6800 and 2N6802 Ltr Inches Millimeters Min Max Min Max A .178 .182 4.52 4.62 B .114 .118 2.89 2.99 C .038 .040 .96 1.02 D .038 .040 .96 1.02 E .048 .051 1.22 1.30 F .096 .100 2.44 2.54 Provided by IHSNot for ResaleNo reproduction o

32、r networking permitted without license from IHS-,-,-MIL-PRF-19500/557K 8 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured

33、by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 an

34、d as follows. nC - nano coulomb. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 (TO-205), 2 (LCC), 3, 4, and 5 (die) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-S

35、TD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Internal construction. Multiple chip construction shall not be permitted. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrostatic discharge prote

36、ction. The devices covered by this specification require electrostatic protection. 3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. The following handling practices shall be followed: a. Devices shall be handled on benches

37、 with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent, if practi

38、cal. g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. h. Gate shall be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source. Provided by IHSNot for ResaleNo reproduction or networking permitted wit

39、hout license from IHS-,-,-MIL-PRF-19500/557K 9 3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.8 Electrical test requirements. The electrical test requirements shall be the subgroup

40、s specified in table I. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements spe

41、cified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E

42、inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification that did not request the performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot of this r

43、evision to maintain qualification. 4.2.2 JANHC and JANKC die. Qualification shall be in accordance with MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/557K 10 4.3 Screening (JANS, JANTX and JANTXV levels only). Screening

44、 shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of Measurement MIL-PRF-19500) (1) (2) JANS le

45、vel JANTX and JANTXV levels (3) Gate stress test (see 4.3.2) Gate stress test (see 4.3.2). (3) (4) Unclamped inductive switching, method 3470 of MIL-STD-750 (see 4.3.3), optional Unclamped inductive switching, method 3470 of MIL-STD-750 (see 4.3.3), optional (3) 3c Method 3161 of MIL-STD-750 (see 4.

46、3.4) Method 3161 of MIL-STD-750 (see 4.3.4) 9 IGSSF1, IGSSR1, IDSS1, subgroup 2 of table I herein Subgroup 2 of table I herein 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS(on)1,VGS(TH)1, Subgroup 2 of table I herein; IGSSF

47、1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(on)1,VGS(TH)1Subgroup 2 of table I herein. 12 Method 1042 of MIL

48、-STD-750, test condition A, t = 240 hours Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 25 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value VGS(TH)1= 20 percent of initial value Subgroup 2 of table I herein IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA d