DLA MIL-PRF-19500 554 E-2009 SEMICONDUCTOR DEVICE DIODE SILICON SCHOTTKY BARRIER FAST RECOVERY TYPE 1N6392 JAN JANTX JANTXV AND JANHC.pdf
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1、 MIL-PRF-19500/554E 24 November 2009 SUPERSEDING MIL-PRF-19500/554D 25 May 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY, TYPE 1N6392, JAN, JANTX, JANTXV, AND JANHC This specification is approved for use by the all Departments and Agencies
2、 of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a silicon, fast recovery, Schottky barrier semiconductor diode. Three
3、 levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for each unencapsulated device type. 1.2 Physical dimensions. See figure 1 (DO-5) and figure 2 (die). 1.3 Maximum ratings. Unless otherwise specified
4、TA= 25C. Type VRRMand VRWM(1) VRSM VR(1) IFM(2) TC= +115C IO(3) TC= +115C IFSMTJTSTG Max RJC 1N6392 V(pk) 45 V(pk) 54 V dc 45 A dc 60 A dc 54 A (pk) 1,000 C -55 to +175 C/W 1.0 (1) Full rated VRRMand VRWMis applicable over the range of TC= -55C to + 173C for IFM= 0. Full rated VRis applicable over t
5、he temperature range of TC= -55C to +166C. When VR= 45 V dc and TC= +166C, then TJ= +175C. (2) Average current with a 50 percent duty cycle square wave including reverse amplitude equal to the magnitude of full rated VRWM. Derate linearly at 1.09 A dc/C for TC +115C. (3) Average current with an appl
6、ied sine wave peak value equal to the magnitude of full rated VRWM. For temperature-current derating curves, see figure 3. 1.4 Unless otherwise noted, primary electrical characteristics at TC= +25C. Type Max VFM1 IFM= 120 A (pk) Max VFM3IFM= 10 A (pk) Max IRM VRM= 45 V (pk) Max CTVR= 5 V dc TJ= +25C
7、 TJ= +175C 1N6392 V (pk) 0.82 V (pk) 0.51 mA (pk) 2.0 mA (pk) 200 pF 3,000 AMSC N/A FSC 5961 * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil.
8、 Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 February 2010. INC
9、H-POUND Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/554E 2 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Units must not be damaged by torque of 30 inch-pound applied to .25-28 UNF-2B n
10、ut assembled on thread. 4. Length of incomplete or undercut threads of UD. 5. Maximum pitch diameter of plated threads shall be basic pitch diameter .2268 inch (5.76 mm) reference (FED-STD-H28, “Screw-Thread Standards for Federal Services”). 6. A chamfer or undercut on one or both ends of the hex po
11、rtion is optional; minimum base diameter at seating plane .600 inch (15.24 mm). 7. The angular orientation and peripheral configuration of terminal 1 is undefined, however, the major surfaces over dimensions C and C1shall be flat. 8. The anode is connected to terminal 1. The cathode is connected to
12、terminal 2. 9. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (DO-5). Ltr Dimensions Notes Inches Millimeters Min Max Min Max C .375 9.53 7 CD .667 16.94 CH .450 11.43 C1 .025 .080 0.64 2.03 HF .669 .688 17.00 17.48 HT1 .115 .200 2.92 5.08 HT2
13、.060 1.52 6 OAH .750 1.00 19.05 25.40 SD 5 SL .422 .453 10.72 11.51 SU .090 2.29 4 UD .220 .249 5.59 6.32 T .140 .175 3.56 4.45 DO-5 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/554E 3 Ltr Dimensions Inches Millimeters Min Max Min Ma
14、x A .210 .220 5.38 5.46 B .190 .210 5.03 5.08 C .012 .013 .30 .33 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The metallization characteristics of the die are: Anode (front) Cathode (back) Ag Ag 4. In accordance with ASME Y14.5M, diameters are equiva
15、lent to x symbology. * FIGURE 2. JANHCA die dimensions (A version). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/554E 4 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of
16、 this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specifie
17、d requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein
18、. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. *
19、(Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the c
20、ontract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General.
21、 The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by amanufacturer authorized by the qualifying activity for listing on the applicable qualified manufa
22、cturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be asspecified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified i
23、n MIL-PRF-19500 and figures 1 and 2 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Diode construction. These devices shall
24、 be constructed in a manner and using material which enable thediodes to meet the applicable requirements of MIL-PRF-19500 and this document. 3.5.1 Polarity. Devices shall have the cathode electrically connected to the stud. 3.6 Marking. Marking shall be in accordance with MIL-PRF-19500. Provided by
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